ADPOW APTGT50A120T Phase leg fast trench field stop igbt power module Datasheet

APTGT50A120T
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
NTC2
Q1
G1
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
E1
OUT
Q2
G2
E2
NTC1
G2
E2
VBUS
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
OUT
OUT
0/VBUS
E1
E2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
75
50
100
±20
277
Tj = 125°C
100A @ 1150V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
May, 2005
0/VBU S
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT50A120T – Rev 0
VBUS
VCES = 1200V
IC = 50A @ Tc = 80°C
APTGT50A120T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
5.0
Min
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 18 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 50A
R G = 18 Ω
Test Conditions
Typ
1.7
2.0
5.8
Typ
3600
190
160
90
30
420
Max
Unit
500
2.1
µA
6.5
400
V
nA
Max
Unit
pF
ns
70
90
50
520
90
5
5.5
Min
Typ
ns
mJ
Max
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 50A
trr
Reverse Recovery Time
IF = 50A
VR = 600V
Qrr
Reverse Recovery Charge
di/dt =2000A/µs
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Unit
250
500
50
1.4
1.3
150
250
4.5
9
µA
A
1.9
V
ns
µC
May, 2005
IRM
V
APT website – http://www.advancedpower.com
2-5
APTGT50A120T – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT50A120T
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.45
0.58
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
2500
-40
-40
-40
1.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT50A120T – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT50A120T
Typical Performance Curve
Output Characteristics (VGE =15V)
100
Output Characteristics
100
TJ = 125°C
T J=25°C
80
80
V GE=17V
VGE=13V
60
IC (A)
IC (A)
TJ=125°C
40
40
20
20
0
V GE=15V
60
VGE=9V
0
0
0.5
1
1.5
2
V CE (V)
2.5
3
0
3.5
12
TJ =25°C
8
60
E (mJ)
IC (A)
VCE = 600V
VGE = 15V
RG = 18Ω
TJ = 125°C
10
TJ =125°C
40
3
4
6
Eon
Eon
Eoff
Er
4
20
2
T J=125°C
0
0
5
6
7
8
9
10
11
0
12
20
Switching Energy Losses vs Gate Resistance
12
8
60
80
100
Reverse Bias Safe Operating Area
120
VCE = 600V
VGE =15V
IC = 50A
TJ = 125°C
10
40
IC (A)
V GE (V)
Eon
100
80
Eoff
6
4
IC (A)
E (mJ)
2
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
80
1
60
40
Er
2
VGE =15V
TJ=125°C
RG=18Ω
20
0
0
0
10
20 30 40 50 60
Gate Resistance (ohms)
70
80
0
300
600
900
V CE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.4
IGBT
0.9
0.7
May, 2005
0.3
0.5
0.2
0.1
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT50A120T – Rev 0
Thermal Impedance (°C/W)
0.5
APTGT50A120T
Forward Characteristic of diode
150
70
VCE=600V
D=50%
RG=18Ω
TJ=125°C
TC=75°C
ZVS
60
50
40
30
125
100
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
50
ZCS
20
hard
switching
10
TJ=125°C
75
25
TJ=125°C
TJ=25°C
0
0
0
10
20
30
40 50
IC (A)
60
70
0
80
0.5
1
1.5
VF (V)
2
2.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
Diode
0.5
0.7
0.4
0.3
0.2
0.1
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT50A120T – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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