APTGT50DA170T Boost chopper Trench + Field Stop IGBT® Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NT C2 CR1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring OUT Q2 G2 E2 NT C1 G2 E2 VBUS VBUS SENSE Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile OUT OUT 0/VBUS E2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 75 50 100 ±20 312 Tj = 125°C 100A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A May, 2005 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT50DA170T – Rev 0 VBUS VB US SENS E VCES = 1700V IC = 50A @ Tc = 80°C APTGT50DA170T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 50A R G = 10 Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 50A R G = 10 Ω Chopper diode ratings and characteristics Symbol Characteristic VRRM 5.0 Test Conditions Typ 2.0 2.4 5.8 Typ 4400 180 150 370 40 Max Unit 250 2.4 µA 6.5 400 V nA Max Unit pF ns 650 180 400 50 800 300 16 15 Min Typ ns mJ Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1700V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 50A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A VR = 900V di/dt =800A/µs Unit V Tj = 25°C Tj = 125°C 250 500 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 14 Tj = 125°C 23 µA A 2.2 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT50DA170T – Rev 0 Symbol Cies Coes Cres Td(on) Tr Min APTGT50DA170T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.4 0.7 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 3400 -40 -40 -40 1.5 °C/W V 150 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT50DA170T – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT50DA170T Typical Performance Curve Output Characteristics 100 TJ = 125°C T J=25°C TJ =125°C 60 V GE=9V 20 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 1 3 V CE (V) 4 5 50 VCE = 900V VGE = 15V RG = 10Ω T J = 125°C T J=25°C 80 40 60 E (mJ) TJ=125°C 40 30 Eon Eoff 20 Er TJ =125°C 20 Er 10 0 0 5 6 7 8 9 10 11 12 0 13 20 Switching Energy Losses vs Gate Resistance 80 100 125 VCE = 900V VGE =15V IC = 50A TJ = 125°C 100 Eon IC (A) 30 60 Reverse Bias Safe Operating Area 50 40 40 IC (A) V GE (V) 20 Eoff 75 50 VGE=15V TJ=125°C RG =10Ω 25 10 Er 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 0.4 0.3 0.25 0.2 0.15 0 80 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.45 0.35 70 IGBT 0.9 0.7 May, 2005 0 0.5 0.3 0.1 0.05 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT50DA170T – Rev 0 E (mJ) 2 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE=13V VGE =15V 40 0 Thermal Impedance (°C/W) VGE =20V 80 IC (A) IC (A) Output Characteristics (V GE=15V) 100 90 80 70 60 50 40 30 20 10 0 APTGT50DA170T Forward Characteristic of diode 100 90 VCE =900V D=50% RG=10 Ω T J=125°C T C=75°C ZCS 25 20 ZVS 15 80 T J=25°C 70 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 30 10 60 50 T J=125°C 40 T J=125°C 30 20 hard switching 5 10 0 0 0 10 20 30 40 IC (A) 50 60 70 0 80 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 Diode 0.9 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 May, 2005 rectangular Pulse Duration (Seconds) APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT50DA170T – Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein