Microsemi APTGT50H120T3G Full - bridge fast trench field stop igbt power module Datasheet

APTGT50H120T3G
Full - Bridge
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
19
Q2
22
7
23
8
CR2
26
Q3
11
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
10
CR4
Q4
4
27
3
29
31
30
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 125°C
Max ratings
1200
75
50
100
±20
270
100A @ 1150V
Unit
V
A
July, 2006
CR3
CR1
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT50H120T3G – Rev 1
Q1
18
VCES = 1200V
IC = 50A @ Tc = 80°C
APTGT50H120T3G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Test Conditions
VGE = 0V,VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
R G = 18Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
R G = 18Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
VGE = ±15V
VBus = 600V
IC = 50A
R G = 18Ω
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
DC Forward Current
VF
Diode Forward Voltage
1.4
5.0
Min
1.7
2.0
5.8
Typ
3600
160
90
30
420
Max
250
500
2.1
Max
Unit
pF
ns
ns
90
5
Tj = 125°C
5.5
Min
Typ
Max
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/µs
Er
Reverse Recovery Energy
IF = 60A
VR = 800V
Unit
V
Tj = 25°C
Tj = 125°C
Tc = 70°C
trr
V
V
nA
1200
IF = 60A
IF = 120A
IF = 60A
µA
mJ
Test Conditions
VR=1200V
Unit
6.5
400
70
90
50
520
Tj = 125°C
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VGE = 0V
VCE = 1200V
Dynamic Characteristics
Symbol
Cies
Crss
Td(on)
Tr
Td(off)
Min
250
500
Tj = 125°C
60
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
Tj = 25°C
Tj = 125°C
470
1200
4000
Tj = 125°C
2.2
µA
A
2.5
V
ns
July, 2006
Symbol Characteristic
nC
mJ
di/dt =1000A/µs
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2-5
APTGT50H120T3G – Rev 1
Electrical Characteristics
APTGT50H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.45
0.9
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT50H120T3G – Rev 1
28
17
1
July, 2006
SP3 Package outline (dimensions in mm)
APTGT50H120T3G
Typical Performance Curve
Output Characteristics (VGE =15V)
100
Output Characteristics
100
TJ = 125°C
T J=25°C
80
80
VGE=17V
VGE=13V
60
VGE =15V
40
40
VGE=9V
20
20
60
IC (A)
IC (A)
T J=125°C
0
0
0
0.5
1
1.5
2
V CE (V)
3
0
3.5
12
TJ=25°C
80
2
VCE (V)
VCE = 600V
VGE = 15V
RG = 18Ω
TJ = 125°C
10
8
E (mJ)
60
TJ=125°C
40
6
3
4
Eon
Eoff
4
Eon
TJ=125°C
20
2
0
0
5
6
7
8
9
V GE (V)
10
11
10
12
10
Eon
90
110
100
80
8
7
60
40
Eoff
Eoff
6
70
Reverse Bias Safe Operating Area
IC (A)
9
50
120
VCE = 600V
VGE =15V
IC = 50A
T J = 125°C
11
30
IC (A)
Switching Energy Losses vs Gate Resistance
12
E (mJ)
1
Energy losses vs Collector Current
Transfert Characteristics
100
IC (A)
2.5
VGE =15V
TJ =125°C
RG=18Ω
20
5
4
0
0
20
40
60
Gate Resistance (ohms)
80
0
400
800
VCE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
IGBT
0.9
0.2
0.1
July, 2006
0.7
0.3
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT50H120T3G – Rev 1
Thermal Impedance (°C/W)
0.5
APTGT50H120T3G
Forward Characteristic of diode
160
VCE=600V
D=50%
RG =18Ω
TJ=125°C
TC=75°C
60
ZCS
ZVS
40
140
120
100
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
80
T J=125°C
80
60
20
T J=25°C
40
hard
switching
20
0
0
0
10
20
30
40
IC (A)
50
60
0
70
0.5
1
1.5
V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1
0.8
Diode
0.9
0.7
0.6
0.5
0.4
0.2
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT50H120T3G – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)
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