ADPOW APTGT50X120BTP3 Input rectifier bridge brake 3 phase bridge trench igbt power module Datasheet

APTGT50X120RTP3
APTGT50X120BTP3
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trench IGBT® Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
•
•
•
•
•
APTGT50X120RTP3: Without Brake (Pin 7 & 14 not connected)
21
20 19
18 17
16 15
14 13 12 11 10
Benefits
22
9
8
23
7
24
1
2
3
4
5
6
•
•
•
•
•
•
•
•
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Symbol
VRRM
ID
IFSM
Parameter
Repetitive Peak Reverse Voltage
DC Forward Current
Surge Forward Current
tp = 10ms
TC = 80°C
Tj = 25°C
Max ratings
1600
80
500
Tj = 150°C
400
Unit
V
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4
APTGT50X120BTP3 – Rev 0,
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
September 2003
All ratings @ Tj = 25°C unless otherwise specified
APTGT50X120RTP3
APTGT50X120BTP3
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
IF
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
IGBT & Diode Inverter
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
IF
IFRM
TC = 25°C
TC = 80°C
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
DC Forward Current
Repetitive Peak Forward Current
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol
IR
VF
RthJC
TC = 25°C
TC = 80°C
TC = 25°C
Characteristic
Reverse Current
Forward Voltage
Junction to Case
TC = 25°C
Tj = 125°C
TC = 80°C
tp = 1ms
Test Conditions
VR = 1600V
Tj = 150°C
Tj = 150°C
IF = 50A
IGBT Brake & Diode (only for APTGT50X120BTP3) Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Cies
Coes
Cres
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VF
Forward Voltage
RthJC
Junction to Case
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 35A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
VGE = 0V,
VCE = 25V
f = 1MHz
Tj = 25°C
VGE = 0V
IF = 35A
Tj = 125°C
IGBT
Diode
APT website – http://www.advancedpower.com
Max ratings
1200
55
35
80
±20
200
15
Unit
V
Max ratings
1200
75
50
100
±20
270
100A @ 1100V
50
100
Unit
V
Min
Min
5.0
Typ
3
1.0
Typ
4
1.8
2.2
5.8
2530
132
115
2.3
2.5
A
V
W
A
A
V
W
A
Max
Unit
mA
V
0.65
°C/W
Max
Unit
mA
2.2
6.5
500
V
V
nA
pF
2.7
0.6
1.5
September 2003
Symbol
VCES
V
°C/W
2-4
APTGT50X120BTP3 – Rev 0,
IGBT & Diode Brake (only for APTGT50X120BTP3) Absolute maximum ratings
APTGT50X120RTP3
APTGT50X120BTP3
IGBT & Diode Inverter Electrical Characteristics
Collector Emitter on Voltage
VGE(th)
IGES
Cies
Coss
Crss
Td(on)
Tr
Td(off)
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
VF
Forward Voltage
Qrr
Reverse Recovery Charge
RthJC
VGE = 0V
IF = 50A
IF = 50A
VR = 600V
di/dt=990A/µs
Min
1200
1.4
5.0
Typ
1.7
2.0
5.8
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
9.4
Symbol Characteristic
R25
Resistance @ 25°C
B 25/50 T25 = 298.16 K
RT =
R25
exp B25 / 50
1 1
−
T25 T
6.5
500
Unit
V
mA
V
V
nA
pF
ns
65
90
45
520
90
5.8
1.6
1.6
5.2
Temperature sensor NTC
5
2.1
3600
188
163
85
30
420
IGBT
Diode
Junction to Case
Max
ns
mJ
2.2
V
µC
0.45
0.75
°C/W
Min
Typ
5
3375
Max
Unit
kΩ
K
Min
Typ
Max
Unit
T: Thermistor temperature
RT: Thermistor value at T
3. Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
VISOL
I isol<1mA, 50/60Hz
TJ
Operating junction temperature range
TSTG
Storage Temperature Range
TC
Operating Case Temperature
To Heatsink
Torque Mounting torque
Wt
Package Weight
2500
M5
APT website – http://www.advancedpower.com
-40
-40
-40
September 2003
VCE(on)
Test Conditions
VGE = 0V, IC = 3mA
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 18Ω
V
150
125
125
3.3
300
°C
N.m
g
3-4
APTGT50X120BTP3 – Rev 0,
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
APTGT50X120RTP3
APTGT50X120BTP3
4. Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
4-4
APTGT50X120BTP3 – Rev 0,
September 2003
PIN 24
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