Microsemi APTM100DA18TG Boost chopper mosfet power module Datasheet

APTM100DA18TG
Boost chopper
MOSFET Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
NTC2
VBUS SENSE
CR1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
OUT
Q2
G2
S2
NTC1
G2
S2
VBUS
VBUS
SENSE
0/VBUS
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
OUT
OUT
S2
NTC2
G2
NTC1
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
43
33
172
±30
210
780
25
50
3000
Unit
V
A
V
mΩ
W
A
July, 2006
0/VBU S
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM100DA18TG– Rev 2
VBUS
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
APTM100DA18TG
All ratings @ Tj = 25°C unless otherwise specified
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
Min
VGS = 0V,VDS = 1000V
T j = 25°C
VGS = 0V,VDS = 800V
T j = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
mΩ
V
nA
nF
nC
ns
155
40
1800
µJ
1246
2846
µJ
1558
Min
1000
Typ
Tj = 25°C
Tj = 125°C
Max
250
500
Tj = 125°C
60
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
760
Tj = 125°C
3600
T c = 100°C
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Unit
12
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, R G = 2.5Ω
IF = 60A
VR = 670V
di/dt = 200A/µs
Max
µA
18
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, R G = 2.5Ω
IF = 60A
IF = 120A
IF = 60A
Unit
244
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
R G = 2.5Ω
VR=1000V
Typ
10.4
1.76
0.32
372
Max
200
1000
210
5
±150
48
Chopper diode ratings and characteristics
IRM
180
3
VGS = 10V
VBus = 500V
ID = 43A
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
Typ
Unit
V
µA
A
2.5
V
July, 2006
Symbol
ns
nC
2–6
APTM100DA18TG– Rev 2
Electrical Characteristics
APTM100DA18TG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
To Heatsink
M5
2500
-40
-40
-40
2.5
RT =
Min
R 25
Unit
°C/W
V
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Max
0.16
0.9
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

July, 2006
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM100DA18TG– Rev 2
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
APTM100DA18TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.3
0.06
0.04
0.1
0.05
0.02
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
160
120
7V
80
6.5V
60
6V
40
5.5V
20
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
140
I D, Drain Current (A)
120
100
80
60
T J=25°C
40
20
5V
0
0
5
10
15
20
25
T J=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9
1.1
VGS=20V
0.9
40
35
30
25
20
15
10
0.8
5
0
0
20
40
60
80
100
120
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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July, 2006
RDS(on) Drain to Source ON Resistance
VGS=10V
1
3
45
Normalized to
VGS =10V @ 21.5A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
T J=-55°C
0
4–6
APTM100DA18TG– Rev 2
I D, Drain Current (A)
VGS =15, 10&8V
100
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=21.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by R DSon
100
1ms
10
Single pulse
TJ =150°C
TC=25°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
14
ID=43A
TJ =25°C
12
VDS=500V
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
VDS=200V
V DS =800V
8
6
4
2
0
0
100
200
300
400
500
Gate Charge (nC)
July, 2006
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
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5–6
APTM100DA18TG– Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100DA18TG
APTM100DA18TG
Delay Times vs Current
Rise and Fall times vs Current
80
t d(off)
160
V DS=670V
RG =2.5Ω
T J=125°C
L=100µH
120
80
40
tr
0
0
10
30
50
70
90
10
I D, Drain Current (A)
Eon
V DS =670V
RG =2.5Ω
T J=125°C
L=100µH
Eoff
2
1
5
4
2
Eoff
1
30
50
70
90
0
I D, Drain Current (A)
5
10
15
20
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
200
ZCS
I DR, Reverse Drain Current (A)
250
Frequency (kHz)
Eon
3
0
10
ZVS
150
50
Eoff
VDS=670V
ID=43A
T J=125°C
L=100µH
6
0
100
90
7
Switching Energy (mJ)
Switching Energy (mJ)
3
30
50
70
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
4
tf
20
t d(on)
40
V DS =670V
RG =2.5Ω
T J=125°C
L=100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
200
VDS=670V
D=50%
RG=2.5Ω
T J=125°C
Tc=75°C
Hard
switching
100
T J=25°C
10
0
15
20
25
30
35
ID, Drain Current (A)
40
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM100DA18TG– Rev 2
July, 2006
10
T J=150°C
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