APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12 • • • Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 20 15 120 ±30 480 357 16 Unit V A December, 2007 ID Parameter Drain - Source Breakdown Voltage V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM100DA40T1G – Rev 0 Symbol VDSS APTM100DA40T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 400 4 Max 100 500 480 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 16A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 6800 700 92 pF 260 nC 46 125 39 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 16A RG = 2.2Ω 35 ns 130 33 Chopper diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VR=1200V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C 380 Tj = 25°C 360 Tj = 125°C 1700 Unit V µA A 3.1 V ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 2500 -40 -40 -40 2.5 Typ Max 0.35 1.2 Unit °C/W V 150 125 100 4.7 80 °C N.m g 2–5 December, 2007 IRM Test Conditions APTM100DA40T1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM100DA40T1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K Min RT = R25 Typ 50 3952 Max Unit kΩ K T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.3 0.2 December, 2007 0.7 0.5 0.3 0.1 0.1 Single P ulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3–5 APTM100DA40T1G – Rev 0 Thermal Impedance (°C/W) 0.4 APTM100DA40T1G Low Voltage Output Characteristics Low Voltage Output Characteristics 35 50 TJ=125°C 40 ID, Drain Current (A) TJ=25°C 30 TJ=125°C 20 10 0 30 VGS=6, 7, 8 & 9V 25 20 15 5V 10 4.5V 5 0 0 5 10 15 20 0 5 Normalized RDSon vs. Temperature 35 VGS=10V ID=16A 25 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 25 TJ=125°C 20 15 TJ=25°C 10 5 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (°C) 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 12 VGS=10V ID=16A 10 VDS=200V VDS=500V C, Capacitance (pF) 8 6 VDS=800V 4 2 0 Ciss 10000 1000 Coss 100 Crss 10 1 0 40 80 120 160 200 240 280 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 December, 2007 VGS, Gate to Source Voltage 20 Transfert Characteristics 3 2.5 15 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 10 APTM100DA40T1G – Rev 0 ID, Drain Current (A) VGS=10V APTM100DA40T1G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge TJ=125°C 40 20 TJ=25°C 0 1.0 2.0 3.0 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 45 A 3 30 A 2 15 A 1 0 0 200 400 600 800 800 1000 1200 1000 1200 30 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 160 Duty Cycle = 0.5 TJ=175°C 40 IF(AV) (A) C, Capacitance (pF) 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 120 80 30 December, 2007 0.0 TJ=125°C VR=800V 400 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100DA40T1G – Rev 0 60 500 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 80