APTM100H80FT1G VDSS = 1000V RDSon = 800mΩ typ @ Tj = 25°C ID = 11A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 10 NTC 12 Features • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • • • • • • • Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 11 8 68 ±30 960 208 9 Unit V December, 2007 ID Parameter Drain - Source Breakdown Voltage A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTM100H80FT1G – Rev 0 Symbol VDSS APTM100H80FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 1mA VGS = ±30 V Min 3 Typ 800 4 Max 250 1000 960 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 3876 405 52 pF 150 VGS = 10V VBus = 500V ID = 9A nC 26 70 29 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 9A RG = 4.7Ω 31 ns 105 28 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 11 8 1 25 245 Tj = 125°C 465 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 9A IS = - 9A VR = 100V diS/dt = 100A/µs Tj = 25°C 1.02 Tj = 125°C 2.57 Unit A V V/ns ns µC www.microsemi.com 2–5 APTM100H80FT1G – Rev 0 December, 2007 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 9A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C APTM100H80FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.6 150 125 100 4.7 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTM100H80FT1G – Rev 0 December, 2007 SP1 Package outline (dimensions in mm) APTM100H80FT1G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 16 25 TJ=125°C 20 ID, Drain Current (A) TJ=25°C 15 TJ=125°C 10 5 0 12 VGS=6, 7, 8 &9V 8 5V 4 4.5V 0 0 5 10 15 20 0 5 Normalized RDSon vs. Temperature VGS=10V ID=9A 20 25 2 1.5 1 0.5 0 10 TJ=125°C 7.5 5 TJ=25°C 2.5 0 50 75 100 125 150 0 1 2 3 4 5 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 10000 12 VGS=10V ID=9A 6 Ciss VDS=500V 8 6 VDS=800V 4 2 C, Capacitance (pF) VDS=200V 0 1000 Coss 100 Crss 10 1 0 20 40 60 80 100 120 140 160 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–5 December, 2007 25 10 30 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 12.5 TJ, Junction Temperature (°C) VGS, Gate to Source Voltage 15 Transfert Characteristics 15 3 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) APTM100H80FT1G – Rev 0 ID, Drain Current (A) VGS=10V APTM100H80FT1G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 25 20 TJ=125°C 15 10 TJ=25°C 5 0 0 0.3 0.6 0.9 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.5 0.9 0.7 0.4 0.5 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTM100H80FT1G – Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein December, 2007 rectangular Pulse Duration (Seconds)