APTM100UM60FAG Single Switch MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control SK S D Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance DK G S D Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 129 97 516 ±30 70 2272 25 50 3000 Unit V A V mΩ W A July, 2006 SK mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100UM60FAG Rev 2 DK VDSS = 1000V RDSon = 60mΩ typ @ Tj = 25°C ID = 129A @ Tc = 25°C APTM100UM60FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 64.5A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 60 3 Min VGS = 10V VBus = 500V ID = 129A Typ 31.1 5.28 0.96 1116 Unit Max Unit µA mΩ V nA nF nC 732 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 129A R G =0.8Ω 12 40 5.4 8.5 mJ 4.7 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 129A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C mJ 3.7 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8Ω Test Conditions ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 129A, R G = 0.8Ω IS = - 129A VR = 670V diS/dt = 600A/µs Max 600 3 70 5 ±500 144 Source - Drain diode ratings and characteristics Symbol IS Typ Max 129 97 1.3 18 320 650 21.6 58.3 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 129A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM100UM60FAG Rev 2 Symbol APTM100UM60FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.055 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100UM60FAG Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM100UM60FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.06 0.9 0.05 0.7 0.04 0.03 0.5 0.02 0.3 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 360 7V 240 6.5V 180 6V 120 5.5V 60 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 ID, Drain Current (A) 360 300 240 180 T J=25°C 120 60 5V 0 0 5 10 15 20 25 T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS =10V V GS=20V 0.9 0.8 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance 1.2 1 3 140 Normalized to VGS =10V @ 64.5A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 4–6 APTM100UM60FAG Rev 2 I D, Drain Current (A) V GS=15, 10&8V 300 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=64.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by R DSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 14 ID=129A TJ=25°C 12 10 VDS=200V V DS =500V V DS=800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 250 500 750 1000 1250 1500 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM100UM60FAG Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM60FAG APTM100UM60FAG Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =0.8Ω T J=125°C L=100µH 120 80 0 40 tr 0 40 80 120 160 200 240 40 80 I D, Drain Current (A) 20 10 Switching Energy (mJ) Switching Energy (mJ) E on VDS=670V RG=0.8Ω TJ=125°C L=100µH 12.5 Eoff 7.5 5 2.5 0 Eoff V DS=670V ID=129A T J=125°C L=100µH 16 12 Eon 8 4 80 120 160 200 240 Eoff 0 I D, Drain Current (A) 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 250 IDR, Reverse Drain Current (A) 1000 200 Frequency (kHz) 240 0 40 ZCS 150 ZVS 50 120 160 200 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 15 100 tf 20 t d(on) 40 V DS =670V RG =0.8Ω T J=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 VDS=670V D=50% RG=0.8Ω T J=125°C T C=75°C Hard switching 0 30 50 70 90 110 ID, Drain Current (A) T J=150°C 10 TJ=25°C 1 130 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM100UM60FAG Rev 2 July, 2006 10 100