APTM20DHM10G Asymmetrical - bridge MOSFET Power Module Application VBUS Q1 • • • CR3 G1 OUT2 S1 • CR2 G4 S4 0/VBUS Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits • • • • • S4 G4 OUT2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 12 694 89 50 2500 Unit V A V mΩ W A July, 2006 0/VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DHM10G – Rev 3 VBUS • • • OUT1 G1 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Q4 OUT1 VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C APTM20DHM10G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 13.7 4.36 0.19 224 Max 200 1000 12 5 ±150 Unit Max Unit nC 28 56 Test Conditions ns 81 99 926 µJ 910 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω 1216 µJ 1062 Min Typ Max 200 IF = 200A IF = 400A IF = 200A IF = 200A VR = 133V di/dt = 400A/µs www.microsemi.com mΩ V nA 94 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω VR=200V µA nF 86 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 10 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A R G = 2.5Ω Symbol Characteristic Typ 3 VGS = 10V VBus = 100V ID = 150A Diode ratings and characteristics VRRM Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tc = 80°C Unit V 250 600 Tj = 125°C 200 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C 110 Tj = 25°C 400 Tj = 125°C 1680 µA A V July, 2006 IDSS Characteristic ns nC 2–6 APTM20DHM10G – Rev 3 Symbol APTM20DHM10G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.18 0.29 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20DHM10G – Rev 3 July, 2006 SP6 Package outline (dimensions in mm) APTM20DHM10G Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 7.5V 300 7V 200 6.5V 6V 100 ID, Drain Current (A) 300 200 T J=25°C 100 TJ =125°C 5.5V 0 TJ =-55°C 0 0 5 10 15 20 25 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 1.2 180 Normalized to V GS=10V @ 87.5A 1.15 1.1 I D, DC Drain Current (A) VGS =10V 1.05 1 VGS =20V 0.95 160 140 120 100 80 60 40 20 0.9 0 0 40 80 120 160 200 I D, Drain Current (A) 240 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) www.microsemi.com 4–6 APTM20DHM10G – Rev 3 I D, Drain Current (A) V GS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) VGS=10V ID= 87.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 1.2 1.1 1.0 0.9 0.8 limited by RDSon 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 0.7 0.6 100µs 100 DC line 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25°C V DS =100V 8 V DS =160V 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20DHM10G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20DHM10G APTM20DHM10G Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 tr 60 40 20 10 0 0 50 100 150 200 250 300 0 50 I D, Drain Current (A) Eon Eoff 1 0.5 VDS=133V ID=150A TJ=125°C L=100µH 2.5 250 300 Eoff Eon 2 Eon 1.5 0 1 0 50 100 150 200 250 0 300 Operating Frequency vs Drain Current ZVS 250 200 IDR, Reverse Drain Current (A) 350 300 V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS 150 Hard Switching 100 50 0 40 10 15 20 Source to Drain Diode Forward Voltage 1000 100 60 80 100 120 140 160 ID, Drain Current (A) TJ =150°C TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved www.microsemi.com 6–6 APTM20DHM10G – Rev 3 July, 2006 20 5 Gate Resistance (Ohms) ID, Drain Current (A) Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 80 td(on) 20 VDS=133V RG=2.5Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current