APTM20HM08F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits OUT2 · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 208 155 832 ±30 8 781 100 50 3000 Unit V A V mW W A May, 2004 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20HM08F– Rev 1 Symbol VDSS APTM20HM08F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375µA Min 200 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Max Unit V 375 1500 8 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 208A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 106 134 32 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5W Rise Time Typ 14.4 4.6 0.3 280 64 ns 88 116 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1698 µJ 1858 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1872 µJ 1972 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tj = 25°C Max 208 155 1.3 5 230 Tj = 125°C 450 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 208A IS = -208A VR = 133V diS/dt = 200A/µs IS = -208A VR = 133V diS/dt = 200A/µs Tj = 25°C 1.8 Tj = 125°C 6.8 Unit A V V/ns ns µC May, 2004 trr Test Conditions u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 208A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM20HM08F– Rev 1 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM20HM08F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.16 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3–6 APTM20HM08F– Rev 1 May, 2004 Package outline APTM20HM08F Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 600 10V 500 9V 400 8.5V 300 8V 7.5V 200 7V 100 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25°C 100 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to VGS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 0.8 200 150 100 50 0 0 50 100 150 200 ID, Drain Current (A) 250 300 25 50 75 100 125 150 TC, Case Temperature (°C) May, 2004 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM20HM08F– Rev 1 ID, Drain Current (A) Transfert Characteristics 600 ID, Drain Current (A) 700 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100µs 100 1ms 10ms 10 100ms Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25°C VDS=100V 10 8 VDS=160V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) May, 2004 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM20HM08F– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM08F APTM20HM08F Delay Times vs Current Rise and Fall times vs Current 160 120 td(on) 40 tr and tf (ns) td(on) and td(off) (ns) 60 120 td(off) VDS=133V RG=2.5Ω TJ=125°C L=100µH 80 100 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) 0 6 3 Eoff Eon 2 1 Switching Energy (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 4 0 VDS=133V ID=208A TJ=125°C L=100µH 5 Eoff 4 3 Eon 2 1 0 50 100 150 200 250 300 350 0 5 ID, Drain Current (A) 200 150 100 50 0 25 50 75 100 125 150 175 200 20 25 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20HM08F– Rev 1 May, 2004 ID, Drain Current (A) 15 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=133V D=50% RG=2.5Ω TJ=125°C 250 10 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Frequency (kHz) tf 80 20 Eon and Eoff (mJ) VDS=133V RG=2.5Ω TJ=125°C L=100µH 140 100