APTM50DUM35TG VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Dual common source MOSFET Power Module Q1 Q2 G1 G2 S1 S2 S NT C1 NTC2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 99 74 396 ±30 39 781 51 50 3000 Unit V A V mΩ W A July, 2006 D2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DUM35TG – Rev 3 D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies APTM50DUM35TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V T j = 125°C VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge 35 3 Min VGS = 10V VBus = 250V ID = 99A Typ 14 2.8 0.2 280 Max 200 1000 39 5 ±150 Unit Max Unit µA mΩ V nA nF nC 80 140 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A R G = 1Ω 38 93 2070 3112 µJ 2026 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 99A IS = - 99A, VR = 333V diS/dt = 200A/µs µJ 1690 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, R G = 1Ω Test Conditions ns 75 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, R G = 1Ω Source - Drain diode ratings and characteristics Symbol IS Typ Max 99 74 1.3 8 Unit A 680 V V/ns ns 34 µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 99A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTM50DUM35TG – Rev 3 Symbol APTM50DUM35TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Max 0.16 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM50DUM35TG – Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTM50DUM35TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.05 0.02 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 7V 6.5V 6V 100 5.5V 0 0 200 150 50 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 0 25 1 VGS=20V 0.95 0.9 20 40 60 80 100 ID, Drain Current (A) 2 4 6 8 DC Drain Current vs Case Temperature VGS =10V 0 TJ=-55°C VGS, Gate to Source Voltage (V) Normalized to VGS=10V @ 49.5A 1.05 TJ=125°C 0 RDS(on) vs Drain Current 1.1 TJ=25°C 100 100 90 80 70 60 50 40 30 20 10 0 120 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 200 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 4–6 APTM50DUM35TG – Rev 3 300 ID, DC Drain Current (A) ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 300 400 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 Single pulse TJ =150°C TC=25°C 10 ms 100 ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=99A TJ=25°C 12 VDS=100V VDS=250V 10 50 VDS=400V 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID=49.5A www.microsemi.com 5–6 APTM50DUM35TG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DUM35TG APTM50DUM35TG Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG=1Ω T J=125°C L=100µH 60 50 40 30 VDS=333V RG=1Ω TJ=125°C L=100µH 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80 td(on) 100 80 tr 60 40 20 20 0 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 40 60 80 100 120 140 160 ID, Drain Current (A) 10 VDS=333V RG=1Ω TJ=125°C L=100µH 5 4 Eon 3 Switching Energy (mJ) Switching Energy (mJ) 20 Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 2 1 VDS=333V ID=99A TJ=125°C L=100µH 8 6 Eoff Eon 4 Eoff 2 0 0 0 20 0 40 60 80 100 120 140 160 ID, Drain Current (A) 350 ZVS 300 250 IDR, Reverse Drain Current (A) 400 V DS=333V D=50% R G=1Ω T J=125°C T C=75°C 200 ZCS 150 Hard switching 100 50 0 20 30 40 50 60 70 I D, Drain Current (A) 80 10 15 20 25 Source to Drain Diode Forward Voltage 1000 100 T J=150°C TJ=25°C 10 90 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DUM35TG – Rev 3 July, 2006 10 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 450 Frequency (kHz) tf