Microsemi APTM60A23FT1G Phase leg mosfet power module Datasheet

APTM60A23FT1G
VDSS = 600V
RDSon = 190mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
Phase leg
MOSFET Power Module
5
6
Application
11
•
•
•
•
Q1
7
8
Features
3
4
Q2
NTC
•
9
10
1
2
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
12
•
•
•
Power MOS 8™ FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
600
20
15
125
±30
230
208
17
Unit
V
A
February, 2010
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
APTM60A23FT1G – Rev 0
Symbol
VDSS
APTM60A23FT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 600V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 17A
VGS = VDS, ID = 1mA
VGS = ±30 V
Min
3
Typ
190
4
Max
250
1000
230
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
165
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 17A
Td(on)
Turn-on Delay Time
Resistive switching @ 25°C
VGS = 15V
VBus = 400V
ID = 17A
RG = 4.7Ω
37
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
5316
610
56
pF
nC
36
70
43
ns
115
34
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
20
15
1
30
200
Tj = 125°C
370
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 17A
IS = - 17A
VR = 100V
diS/dt = 100A/µs
Tj = 25°C
0.76
Tj = 125°C
1.91
Unit
A
V
V/ns
ns
µC
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2–5
APTM60A23FT1G – Rev 0
February, 2010
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C
APTM60A23FT1G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.6
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
R25
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTM60A23FT1G – Rev 0
February, 2010
SP1 Package outline (dimensions in mm)
APTM60A23FT1G
Typical Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
50
75
TJ=25°C
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10V
62.5
50
TJ=125°C
37.5
25
12.5
VGS=7 &8V
40
6V
30
20
5.5V
10
TJ=125°C
0
0
0
5
10
15
20
0
5
20
25
30
50
3
VGS=10V
ID=17A
2
1.5
1
0.5
0
40
TJ=125°C
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
30
20
TJ=25°C
10
0
25
50
75
100
125
150
0
1
TJ, Junction Temperature (°C)
3
4
5
6
7
Capacitance vs Drain to Source Voltage
100000
12
C, Capacitance (pF)
VDS=120V
ID=17A
TJ=25°C
10
2
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
VDS=300V
8
6
VDS=480V
4
2
0
Ciss
10000
1000
Coss
100
10
Crss
25
50
75
100
125
150
175
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4–5
February, 2010
1
0
APTM60A23FT1G – Rev 0
VGS, Gate to Source Voltage
15
Transfert Characteristics
Normalized RDSon vs. Temperature
2.5
10
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V)
APTM60A23FT1G
ISD, Reverse Drain Current (A)
Drain Current vs Source to Drain Voltage
60
50
40
TJ=125°C
30
20
TJ=25°C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.5
0.9
0.7
0.4
0.5
0.3
0.2
0.1
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM60A23FT1G – Rev 0
February, 2010
rectangular Pulse Duration (Seconds)
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