Microsemi APTML20UM18R010T1AG Linear mosfet power module Datasheet

APTML20UM18R010T1AG
VDSS = 200V
RDSon = 18mΩ typ @ Tj = 25°C
ID = 109A* @ Tc = 25°C
Linear MOSFET
Power Module
Application
•
Electronic load dedicated to power supplies and
battery discharge testing
Features
•
•
•
•
•
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
•
•
•
•
•
•
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
109*
81*
400
±30
19
480
100
50
3000
Unit
V
A
V
mΩ
W
A
October, 2009
ID
Parameter
Drain - Source Breakdown Voltage
mJ
* Output current must be limited to 44A @ TC=25°C and 31A @ TC=80°C to not exceed the shunt specification.
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–3
APTML20UM18R010T1AG – Rev 0
Symbol
VDSS
APTML20UM18R010T1AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VDS = 200V ; VGS = 0V
Tj = 25°C
VDS = 160V ; VGS = 0V
Tj = 125°C
VGS = 10V, ID = 50A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Typ
Max
25
250
19
4
±100
Unit
Typ
9880
2320
700
Max
Unit
Typ
10
2
Max
18
2
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
pF
Shunt Electrical Characteristics
Symbol Characteristic
Resistance value
Rsh
Tsh
Tolerance
Psh
Load capacity
Ish
Current capacity
Min
TC=25°C
TC=80°C
TC=25°C
TC=80°C
20
10
44
31
Unit
mΩ
%
W
A
Temperature sensor PTC
Symbol
R25
R100/R25
R-55/R25
B
Characteristic
Resistance @ 25°C
Resistance ratio
Resistance ratio
Temperature coefficient
Min
1980
1.676
0.48
Tamb=100°C & 25°C
Tamb=-55°C & 25°C
Typ
1.696
0.49
7900
Max
2020
1.716
0.50
Unit
Ω
ppm/K
Thermal and package characteristics
Min
MOSFET
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
4000
-40
-40
-40
2.5
Typ
Max
0.26
150
125
100
4.7
80
Unit
°C/W
V
October, 2009
Characteristic
Junction to Case Thermal Resistance
°C
N.m
g
2–3
APTML20UM18R010T1AG – Rev 0
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
APTML20UM18R010T1AG
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Performance Curve (linear mode)
Power vs Drain source voltage
Drain Current vs Drain source voltage
400
100
TJ=125°C
300
250
October, 2009
10
350
200
1
0
50
100
150
200
0
50
100
150
200
Drain Source Voltage (V)
Drain Source Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3–3
APTML20UM18R010T1AG – Rev 0
Dissipated Power (W)
Drain Current (A)
TJ=125°C
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