NEC AR1A4M On-chip resistor pnp silicon epitaxial transistor Datasheet

DATA SHEET
COMPOUND TRANSISTOR
AR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current drives such as IC output and actuator available
• On-chip bias resistor
• Low power consumption during drive
AR1 SERIES LISTS
Products
R1 (KΩ)
R2 (KΩ)
AR1A3M
1.0
1.0
AR1F3P
2.2
10
AR1L3N
4.7
10
AR1A4M
10
10
AR1L2Q
0.47
4.7
AR1F2Q
0.22
2.2
AR1A4A
−
10
Electrode Connection
1. Emitter
EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−1.0
A
IC(pulse) *
−2.0
A
IB(DC)
−0.02
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (Pulse)
Base current (DC)
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16172EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AR1 SERIES
AR1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
50
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.4 A
−0.4
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AR1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.35 A
−0.3
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
1.54
2.2
2.86
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AR1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.2 A
−0.3
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Input resistance
R1
3.29
4.7
6.11
kΩ
E-to-B resistance
R2
7
10
13
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
2
−
Data Sheet D16172EJ1V0DS
AR1 SERIES
AR1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.1 A
−0.2
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
7
10
13
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AR1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.5 A
−0.55
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
3.29
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AR1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
80
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.5 A
−0.55
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
Input resistance
R1
154
220
286
Ω
E-to-B resistance
R2
1.54
2.2
2.86
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
Data Sheet D16172EJ1V0DS
3
AR1 SERIES
AR1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
DC current gain
Collector saturation voltage
Low level input voltage
VCE(sat) **
IC = −500 mA, IB = −10 mA
VIL **
VCE = −5.0 V, IC = −100 µA
Input resistance
R1
E-to-B resistance
R2
7
Data Sheet D16172EJ1V0DS
−
−0.20
−
** PW ≤ 350 µs, duty cycle ≤ 2 %
4
MIN.
−0.35
V
−0.3
V
−
−
Ω
10
13
kΩ
AR1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Data Sheet D16172EJ1V0DS
5
AR1 SERIES
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M8E 00. 4
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