POSEICO AR771 Rectifier diode Datasheet

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
RECTIFIER DIODE
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
AR771
Repetitive voltage up to
Mean forward current
Surge current
5000 V
3680 A
50 kA
FINAL SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
5000
V
V
RSM
Non-repetitive peak reverse voltage
150
5100
V
I
RRM
Repetitive peak reverse current
150
200
mA
V=VRRM
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
3680
A
I
F (AV)
Mean forward current
180° sin ,50 Hz, Tc=85°C, double side cooled
3300
A
I
FSM
Surge forward current
Sine wave, 10 ms
without reverse voltage
50
kA
I² t
I² t
V
FM
Forward voltage
V
F(TO)
r
F
Forward current =
150
12500 x 1E3
3000 A
A²s
25
1.45
V
Threshold voltage
150
0.80
V
Forward slope resistance
150
0.170
mohm
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
I= 1600 A
di/dt= 2A/µs
µs
150
µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T
Operating junction temperature
F
j
11
°C/kW
2
°C/kW
-30 /
Mounting force
46.0
Mass
1700
ORDERING INFORMATION : AR771 S 50
standard specification
VRRM/100
150
°C
/ 54.0
kN
g
AR771 RECTIFIER DIODE
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
150
140
130
120
110
100
30°
90
80
120°
60°
70
90°
180°
60
DC
50
0
200
400
600
800
1000
1200
IF(AV) [A]
PF(AV) [W]
2000
DC
1800
1600
180°
90°
1400
120°
60°
1200
30°
1000
800
600
400
200
0
0
200
400
600
IF(AV) [A]
800
1000
1200
AR771 RECTIFIER DIODE
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
170
150
130
110
90
70
30°
60°
90°
120°
180
50
0
200
400
600
800
1000
1200
IF(AV) [A]
PF(AV) [W]
2000
180
1800
90°
1600
120°
60°
1400
30°
1200
1000
800
600
400
200
0
0
200
400
600
IF(AV) [A]
800
1000
1200
AR771 RECTIFIER DIODE
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
nov 02 - ISSUE : 03
SURGE CHARACTERISTIC
Tj = 150 °C
12000
60
10000
50
8000
40
ITSM [kA]
Forward Current [A]
FORWARD CHARACTERISTIC
Tj = 150 °C
6000
30
4000
20
2000
10
0
0
0.6
1.1
1.6
2.1
2.6
1
Forward Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
12.0
Zth j-h [°C/kW]
10.0
8.0
6.0
4.0
2.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100
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