ADPOW ARF441 N-channel enhancement mode rf power mosfet Datasheet

D
TO-247
G
ARF440
ARF441
S
125W 50V 13.56MHz
125W 50V 13.56MHz
THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.
RF OPERATION (1-15MHz )
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
• Specified 50 Volt, 13.56 MHz Characteristics:
• Output Power = 125 Watts.
• Gain = 21dB (Typ.)
• Efficiency = 63% (Typ.)
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF440/441
VDSS
Drain-Source Voltage
150
VDGO
Drain-Gate Voltage
150
ID
UNIT
Volts
Continuous Drain Current @ TC = 25°C
11
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
167
Watts
Junction to Case
0.75
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
150
VDS(ON) On State Drain Voltage
IDSS
IGSS
1
TYP
MAX
UNIT
Volts
(ID(ON) = 10A, VGS = 10V)
6
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
gfs
Forward Transconductance (VDS = 10V, ID = 5.5A)
4
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
2
5
µA
nA
mhos
5
Volts
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-4406 Rev C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
ARF440/441
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
MIN
TYP
MAX
755
900
VDS = 50V
155
215
f = 1 MHz
55
90
MAX
VGS = 0V
Reverse Transfer Capacitance
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
Characteristic
Test Conditions
MIN
TYP
VDD = 50V
18
21
dB
63
%
Common Source Amplifier Power Gain
Pout = 125W
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 30:1
IDQ = 200mA
UNIT
No Degradation in Output Power
f = 13.56MHz
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT
ATC"B"
.01µF
C5
0.4µH
T2
L2
RF
Output
C4
Q1
RF
Input
0.5µH
L1
C6
BFC1
T1
2:1
.01µF
ATC"B"
25-240pF
C1
75-480pF
+Vbias
R1
ATC"B"
.01µF
R3
3.3K
3.3K
R2
Q2
C7
C2
T3
3.3K
.1µF
C8
RFC1
.01µF
ATC"B"
C9
C3
.1µF
C10
.01µF
C11
+
.1µF
VDD = 50V
Idq = 0.4A
10µF (50V)
Parts List
C1 = 75-480pF Compression Mica
C2, C3 & C10 = .1µF @ 50V, Novacap #1210B104K500N
C4 = 25-240pF Compression Mica
C5, C6, C7, C8 & C9 = .01µF @ 50V, Novacap #1210B103K500N
C11 = 10µF @ 50V Electrolytic
R1, R2 & R3 = 1KΩ, 5%, 1/4W, Carbon
Q1 = ARF440
Q2 = ARF441
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH
L2 = 6.5 T of #18AWG, ID = .438", L = 0.4µH
050-4406 Rev C
BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850
T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25Ω PTFE coax on a Fair-Rite #2643102002 shield bead. µi = 2000
PCB = .062" G10 Epoxy Glass.
ARF440/441
RF POWER OUT (WATTS)
300
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
= 50V
250
DD
I
DQ
= 400mA - 200mA / Side
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
TJ = +25°C
8
TJ = +125°C
4
TJ = +125°C
TJ = +25°C
TJ = -55°C
ID, DRAIN CURRENT (AMPERES)
5.0
re N)
He (O
n
tio R DS
a
r y
pe B
O ited
m
Li
1
.5
TC =+25°C
TJ =+150°C
1
5
10
50 100 150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Maximum DC Safe Operating Area
DS
=V
GS
1.1
1.0
0.9
0.8
0.7
-50
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
20
.1
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
12
5
4.5
Figure 2, RF Power Out vs RF Power In
V
VDS = 30V
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 3, Threshold Voltage vs Temperature
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
10
4.0
1.2
16
0
3.5
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Breakdown Voltage vs Temperature
1,000
Ciss
500
Coss
Crss
100
50
.01
.05
.1
.5
1
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
10
50
050-4406 Rev C
C, CAPACITANCE (pF)
3,000
ARF440/441
TO-247AD Package Outline
ARF440
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Source
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
ARF44E
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
GATE
SOURCE
DRAIN
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
ARF441
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Source
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
ARF44O
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
DRAIN
SOURCE
GATE
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
050-4406 Rev C
NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028 FAX: (541) 388 -0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
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