ADPOW ARF448B N-channel enhancement mode Datasheet

ARF448A
ARF448B
D
G
S
TO-247
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
140W
65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics:
¥
¥
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Low Cost Common Source RF Package.
Output Power = 140 Watts.
Very High Breakdown for Improved Ruggedness.
Gain = 15dB (Class C)
Low Thermal Resistance.
Efficiency = 75%
Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF448A/448B
VDSS
Drain-Source Voltage
450
VDGO
Drain-Gate Voltage
450
ID
Continuous Drain Current @ TC = 25°C
UNIT
Volts
15
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
230
Watts
Junction to Case
0.55
°C/W
RqJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA)
450
VDS(ON) On State Drain Voltage
IDSS
IGSS
gfs
VGS(TH)
1
TYP
MAX
(I D(ON) = 7.5A, VGS = 10V)
3
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
Forward Transconductance (VDS = 25V, ID = 7.5A)
5
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
2
8.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA
mhos
5
Volts
7-2003
BVDSS
Characteristic / Test Conditions
050-4908 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF448A/448B
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
TYP
MAX
1400
1700
150
200
f = 1 MHz
65
100
VGS = 15V
7
15
VDD = 0.5 VDSS
5
10
ID = ID[Cont.] @ 25°C
23
40
RG = 1.6W
12
25
MAX
VGS = 0V
VDS = 150V
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
h
y
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
13
15
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 20:1
VDD = 150V
Pout = 140W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
3000
Class C
VDD = 150V
25
CAPACITANCE (pf)
Pout = 250W
20
GAIN (dB)
Ciss
15
10
20
30
40
50
60 65
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Crss
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
70
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250mSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
15
10
5
Coss
50
20
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
050-4908 Rev B
25
500
100
5
0
10
1000
10mS
OPERATION HERE
LIMITED BY RDS (ON)
10
100mS
1mS
5
10mS
1
.5
.1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
ARF448A/448B
40
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.7
f = 40.68 MHz
180
120
60
0
0
2
4
6
8
10
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
6.5V
20
6V
5.5V
10
5V
0
GPS, COMMON SOURCE AMPLIFIER GAIN
(dB)
POUT, POWER OUT (WATTS)
240
Class C
VDD = 150V
30
4.5V
0.6
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
300
VGS=8, 10 & 15V
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
17
Class C
VDD = 150V
16
f = 40.68 MHz
15
14
13
0
60
120
180
240
300
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.6
0.1
0.2
0.1
0.05
0.05
Note:
0.02
0.01
PDM
0.01
t1
SINGLE PULSE
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZqJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
Z in (W)
20.90 - j 9.2
2.40 - j 6.8
0.57 - j 2.6
0.31 - j 0.5
0.44 + j 1.9
Z OL (W)
56.00 - j 06.0
37.00 - j 26.0
18.00 - j 25.0
9.90 - j 19.2
4.35 - j 11.4
Z in - gate shunted by 25W
Z OL - conjugate of optimum load impedance for 250W at 150V
7-2003
0.001
10-5
050-4908 Rev C
Z JC, THERMAL IMPEDANCE (°C/W)
q
D=0.5
ARF448A/448B
40.68 MHz Test Circuit
Parts List
C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 1" #16 AWG into hairpin ~9.6nH
L2 -- 6t #16 AWG .25" ID ~165nH
L3 -- 10t #18 AWG .25" ID ~0.47µH
L4 -- VK200-4B ferrite choke ~3µH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer
RF Input
L4
+
C6
-
C7
150V
L3
C5
L2
L1
C4
RF Output
C3
DUT
T1
C1
C2
R1
40.48 MHz Test Circuit
TO-247 Package Outline
Top View
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
7-2003
0.40 (.016)
0.79 (.031)
050-4908 Rev C
5.38 (.212)
6.20 (.244)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Device
ARF448A
ARF448B
Gate
Drain
Source
Source
Drain
Gate
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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