BCD AS358MM-E1 Low power dual operational amplifier Datasheet

Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
General Description
Features
The AS358/358A consist of two independent, high
gain and internally frequency compensated operational
amplifiers, they are specifically designed to operate
from a single power supply. Operation from split
power supply is also possible and the low power supply current drain is independent of the magnitude of
the power supply voltages. Typical applications
include transducer amplifiers, DC gain blocks and
most conventional operational amplifier circuits.
·
The AS358/358A series are compatible with industry
standard 358. AS358A has more stringent input offset
voltage than AS358.
·
The AS358 is available in DIP-8, SOIC-8, TSSOP-8
and MSOP-8 packages, AS358A is available in DIP-8
and SOIC-8 packages.
Applications
SOIC-8
·
·
·
·
·
·
·
·
·
DIP-8
AS358/358A
Internally Frequency Compensated for Unity
Gain
Large Voltage Gain: 100dB (Typical)
Low Input Bias Current: 20nA (Typical)
Low Input Offset Voltage: 2mV (Typical)
Low Supply Current: 0.5mA (Typical)
Wide Power Supply Voltage:
Single Supply: 3V to 36V
Dual Supplies: ±1.5V to ±18V
Input Common Mode Voltage Range Includes
Ground
Large Output Voltage Swing: 0V to VCC -1.5V
Battery Charger
Cordless Telephone
Switching Power Supply
TSSOP-8
MSOP-8
Figure 1. Package Types of AS358/358A
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
1
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Pin Configuration
M/P/G/MM Package
(SOIC-8/DIP-8/TSSOP-8/MSOP-8)
OUTPUT 1
1
8
VCC
INPUT 1-
2
7
OUTPUT 2
INPUT 1+
3
6
INPUT 2-
GND
4
5
INPUT 2+
Figure 2. Pin Configuration of AS358/358A (Top View)
Functional Block Diagram
VCC
6µA
4µA
100µA
Q5
Q6
Q2
-
Q3
Cc
Q7
Q4
Q1
Rsc
INPUTS
OUTPUT
+
Q11
Q10
Q8
Q9
Q13
Q12
50µA
Figure 3. Functional Block Diagram of AS358/358A
(Each Amplifier)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
2
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
Ordering Information
-
AS358
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
Package
M: SOIC-8
P: DIP-8
G: TSSOP-8
MM: MSOP-8
Circuit Type
Blank: AS358
A: AS358A
Package
Temperature
Range
Part Number
Tin Lead
AS358M
SOIC-8
-40 to 85oC
AS358MTR
Marking ID
Lead Free
Tin Lead
TSSOP-8
MSOP-8
-40 to 85oC
-40 to 85oC
-40 to 85oC
Packing Type
AS358M
AS358M-E1
Tube
AS358MTR-E1
AS358M
AS358M-E1
Tape & Reel
AS358AM-E1
AS358P
Lead Free
AS358M-E1
AS358AMTR-E1
DIP-8
AS358/358A
AS358P-E1
AS358P
AS358AM-E1
Tube
AS358AM-E1
Tape & Reel
AS358P-E1
Tube
AS358AP-E1
AS358AP-E1
Tube
AS358G-E1
EG3A
Tube
AS358GTR-E1
EG3A
Tape & Reel
AS358MM-E1
AS358MM-E1
Tube
AS358MMTR-E1
AS358MM-E1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
3
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VCC
Value
Unit
40
V
Differential Input Voltage
VID
40
V
Input Voltage
VIC
Power Supply Voltage
-0.3 to 40
V
DIP-8
SOIC-8
830
550
TSSOP-8
MSOP-8
500
470
Power Dissipation (TA=25oC)
PD
Operating Junction Temperature
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
Storage Temperature Range
Lead Temperature (Soldering, 10 Seconds)
mW
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operating Temperature Range
Symbol
Min
Max
VCC
3
36
V
TA
-40
85
oC
Sep. 2006 Rev. 1. 6
Unit
BCD Semiconductor Manufacturing Limited
4
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless
otherwise specified.
Parameter
Symbol
VIO
Input Offset Voltage
Average Temperature Coefficient of Input Offset Voltage
Test Conditions
IIO
IIN+ - IIN-, VCM=0V
Input Common Mode Voltage
Range (Note 3)
VIR
VCC=30V
Supply Current
ICC
Large Signal Voltage Gain
GV
Power
Ratio
Supply
Rejection
Rejection
Channel Separation
Source
Sink
AS358A
5
100
VCC -1.5
TA=-40 to 85oC, RL=∞, VCC=5V
0.5
1.2
CS
f=1kHz to 20kHz
85
100
70
100
-120
VIN+=0V, VIN-=1V, VCC=15V, VO=2V
VCC=15V
15
VOH
VCC=30V, RL=10kΩ
VCC=5V, RL= 10kΩ
mA
µA
50
40
VCC=30V, RL=2kΩ
mA
5
12
mA
dB
40
20
10
V
dB
60
20
nA
dB
60
70
nA
dB
80
60
ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V
VOL
30
2
VCC=5V to 30V
Output Voltage Swing
200
200
VCC=15V, VO=1V to 11V, RL ≥ 2kΩ
mV
µV/oC
0.7
PSRR
ISC
3
Unit
5
20
VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V
Output Short Circuit Current
to Ground
2
TA=-40 to 85oC, RL=∞, VCC=30V
DC, VCM=0V to (VCC-1.5)V
ISINK
5
0
CMRR
Output Current
Max
2
7
Input Offset Current
Mode
Typ
7
∆VIO/∆T TA=-40 to 85oC
IIN+ or IIN-, VCM=0V
Common
Ratio
AS358
VO=1.4V, RS=0Ω,
VCC=5V to 30V
IBIAS
Input Bias Current
Min
60
mA
26
26
27
V
28
27
5
20
mV
30
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
5
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Electrical Characteristics (Continued)
Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or
both inputs can go to +36V without damages, independent of the magnitude of the VCC.
Typical Performance Characteristics
15
20
18
Input Current (nA)
Input Voltage (+VDC)
16
10
NEGATIVE
POSITIVE
5
14
12
10
8
6
4
2
0
0
0
5
10
15
-25
0
Power Supply Voltage (+VDC)
25
50
75
100
125
o
Temperature ( C)
Figure 4. Input Voltage Range
Figure 5. Input Current
120
1.0
0.9
0.8
Voltage Gain (dB)
Supply Current (mA)
105
0.7
0.6
0.5
0.4
0.3
RL=2KΩ
RL=20KΩ
90
75
0.2
0.1
60
0.0
0
5
10
15
20
25
30
35
0
40
Supply Voltage (V)
8
16
24
32
40
Power Supply Voltage (V)
Figure 6. Supply Current
Figure 7. Voltage Gain
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
6
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Performance Characteristics (Continued)
4
120
Output
Voltage (V)
110
100
90
Voltage Gain (dB)
80
70
3
2
1
0
60
Input
Voltage (V)
50
40
30
20
3
2
1
0
10
0
1
10
100
1k
10k
100k
0
1M
4
8
Frequency (Hz)
12
16
20
24
28
32
36
40
Time (µs)
Figure 8. Open Loop Frequency Response
Figure 9. Voltage Follower Pulse Response
20
800
15
600
Output Swing (V)
Output Voltage (mV)
700
500
400
300
200
10
5
100
0
4
8
12
16
0
1k
20
Time (µs)
10k
100k
1M
Frequency (Hz)
Figure 10. Voltage Follower Pulse Response
Figure 11. Large Signal Frequency Response
(Small Signal)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
7
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Performance Characteristics (Continued)
10
7
6
Output Voltage (V)
Output Voltage Referenced to Vcc (V)
8
5
4
3
1
VCC=5V
VCC=15V
0.1
2
1
0
0.1
1
10
0.01
1E-3
100
0.01
0.1
1
10
100
Output Sink Current (mA)
Output Source Current (mA)
Figure 12. Output Characteristics: Current Sourcing
Figure 13. Output Characteristics: Current Sinking
100
90
Output Current (mA)
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
100
125
o
Temperature ( C)
Figure 14. Current Limiting
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
8
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Application
R1
Opto
Isolator
R6
-
VCC
1/2
AS358/A
AC
Line
SMPS
+
Battery
Pack
GND
R7
R3
R4
R5
VCC
1/2
AS358/A
+
GND
-
Current
R2
Sense
AZ431
R8
Figure 15. Battery Charger
R1 910K
R1 100k
+V1
R2 100K
-
VCC
+V2
1/2 AS358/A
R3 91K
R3 100k
VO
+
VIN(+)
+
R2 100k
+V4
Figure 16. Power Amplifier
1/2 AS358/A
VO
R6 100k
+V3
RL
R5
100k
R4 100k
Figure 17. DC Summing Amplifier
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
9
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Typical Application (Continued)
VCC
R2 1M
R1 100k
C1
0.1µF
-
CO
VO
1/2 AS358/A
RB
6.2k
+
CIN
R3
1M
AC
+
2V
-
RL
10k
R1
2K
R2
1/2 AS358/A
R4 100k
VCC
C2
10µF
+
2V
-
R3
2K
R5
100k
I1
+
R4
3K
AV=1+R2/R1
I2
1mA
AV=11 (As shown)
Figure 19. Fixed Current Sources
Figure 18. AC Coupled Non-Inverting Amplifier
R1
1M
C1 0.01µF
0.001µF
R2 100k
R1 16K
-
R2 16k
+
VIN
1/2 AS358/A
C2
0.01µF
VO
1/2 AS358/A
-
+
R3 100k
VO
R3
100k
VO
R5 100k
VCC
0
R4
100k
fO
R4
100k
fO=1kHz
Q=1
AV=2
Figure 21. DC Coupled Low-Pass Active Filter
Figure 20. Pulse Generator
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
10
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
11
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions (Continued)
SOIC-8
Unit: mm(inch)
4.700(0.185)
5.100(0.201)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
1.000(0.039)
φ
0.800(0.031)
0.200(0.008)
0°
8°
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
12
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions (Continued)
TSSOP-8
Unit: mm(inch)
SEE DETAIL A
2.900(0.114)
3.100(0.122)
0.050(0.002)
0.150(0.006)
0.090(0.004)
0.200(0.008)
1.200(0.047)
MAX
0.800(0.031)
1.050(0.041)
12 °
TOP & BOTTOM
R0.090(0.004)
GAGE PLANE
TYP
6.400(0.252)
4.500(0.177)
R0.090(0.004)
0°
8°
0.650(0.026)
TYP
0.400(0.016)
4.300(0.169)
φ
0.450(0.018)
0.750(0.030)
SEATING
PLANE
0.190(0.007)
0.300(0.012)
1.000(0.039)
REF
0.250(0.010)
TYP
1.950(0.077)
TYP
DETAIL A
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
13
Data Sheet
LOW POWER DUAL OPERATIONAL AMPLIFIERS
AS358/358A
Mechanical Dimensions
MSOP-8
Unit: mm(inch)
0.300(0.012)TYP
0.150(0.006)TY
P
2.900(0.114)
3.100(0.122)
4.700(0.185)
5.100(0.201)
0.410(0.016)
0.650(0.026)
0.650(0.026)TYP
0°
6°
0.760(0.030)
0.970(0.038)
0.200(0.008)
2.900(0.114)
3.100(0.122)
0.000(0.000)
0.800(0.031)
1.200(0.047)
`
Sep. 2006 Rev. 1. 6
BCD Semiconductor Manufacturing Limited
14
http://www.bcdsemi.com
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
MAIN SITE
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951, Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808, Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
3170 De La Cruz Blvd., Suite 105,
Santa Clara,
CA 95054-2411, U.S.A
Similar pages