Austin AS4DDR264M65PBG1-3/IT 64mx64 ddr2 sdram w/ dual control bus integrated plastic encapsulated microcircuit Datasheet

i PEM
4.2 G
b SDRAM-DDR2
Gb
Austin Semiconductor, Inc. AS4DDR264M65PBG1
64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS
iNTEGRATED Plastic Encapsulated Microcircuit
BENEFITS
FEATURES
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DDR2 Data rate = 667, 533, 400
Available in Industrial, Enhanced and Extended Temp
Package:
• Proprietary Enchanced Die Stacked iPEM
• 208 Plastic Ball Grid Array (PBGA), 16 x 23mm
• 1.00mm ball pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4n-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eightinternal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes (I/T Version)
On Die Termination (ODT)
Adjustable data – output drive strength
1.8V ±0.1V common core power and I/O supply
Programmable CAS latency: 3, 4, 5, 6 or 7
Posted CAS additive latency: 0, 1, 2, 3, 4 or 5
Write latency = Read latency - 1* tCK
Organized as 64M x 64
Weight: AS4DDR264M64PBG1 ~ 2.0 grams typical
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58% Space Savings
49% I/O reduction vs Individual CSP approach
Reduced part count
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradable to 128M x 64 density in future
Pin / Function equivalent to White
W3H64M64E-xSBx
NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only
FUNCTIONAL BLOCK DIAGRAM
Ax, BA0-2
ODT
VRef
VCC
VCCQ
VCCQ
VCCQ
VCCQ
VSSQ
VCCL
VSSDL
VSSQ
VCCL
VSSQ
VCCL
VSSQ
VCCL
VSS
A
VSSDL
B
CASa\
CKEa\
UDMx, LDMx
UDMx
UDSQx,UDSQx\
LDSQx, LDSQx\
CKx,CKx\
A
AS4DDR264M65PBG1
Rev. 0.5 06/08
C
VSSDL
D
CKEb\
2
2
ODT
VSSDL
CSb\
WEb\
RASb\
CASb\
CSa\
WEa\
RASa\
2
DQ0-15 B
2
2
2
2
2
2
2
2
2
2
DQ16-31 C
2
2
2
DQ32-47 D
DQ48-63
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Austin Semiconductor, Inc. AS4DDR264M65PBG1
SDRAM-DDRII Pinout Top View
Rev. A, 5/08, 208BGA-1.00MM PITCH - X64, DCB
1
A
2
3
4
5
6
7
8
9
10
11
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vss
A
B
Vcc
Vss
NC
NC
NC
NC
CSb\
NC
NC
Vss
Vcc
B
C
Vss
NC
NC
NC
NC
CASb\
RASb\
DQ34
CK3
CK3\
Vss
C
D
DQ35
DQ51
WEb\
CKEb
NC
NC
DQ50
DQ53
DQ37
CK2\
CK2
D
E
DQ52
DQ36
DQ33
NC
BA2
NC
DQ39
LDQS2
LDQS3
DQ48
DQ32
E
F
LDM3
LDM2
DQ49
DQ43
DQ59
NC
DQ55
DQ58
DQ42
G
DQ38
DQ54
DQ60
DQ57
UDM2
Vss
DQ63
DQ56
DQ40
H
UDM3
DQ44
DQ41
DQ46
DQ62
Vcc
UDQS2\
DQ47
J
Vcc
A6
A10
A9
Vcc
Vss
Vcc
A3
A12
RFU
Vcc
J
K
Vss
A0
A11
Vcc
Vss
Vref
Vss
Vcc
A1
BA1
Vss
K
L
Vcc
A2
A4
A8
Vcc
Vss
Vcc
BA0
A5
A7
Vcc
L
DQ15
UDQS0\
Vcc
DQ30
DQ14
DQ9
DQ12
DQ8
DQ24
DQ31
Vss
UDM0
DQ25
DQ28
DQ22
DQ10
DQ26
DQ23
ODT
DQ27
DQ11
DQ17
LDM0
LDM1 p
M UDQS1\ UDQS1 UDQS0
N
DQ13
DQ29
P LDQS1\ LDQS0\
LDQS2\ LDQS3\ F
DQ61
DQ45 G
UDQS2 UDQS3 UDQS3\ H
UDM1 M
DQ6
N
R
DQ0
DQ16
LDQS1
LDQS0
DQ7
NC
NC
NC
DQ1
DQ4
DQ20 R
T
CK0
CK0\
DQ5
DQ21
DQ18
NC
NC
CKEa
WEa\
DQ19
DQ3
T
U
Vss
CK1\
CK1
DQ2
RASa\
CASa\
NC
NC
NC
NC
Vss
U
V
Vcc
Vss
NC
NC
CSa\
NC
NC
NC
NC
Vss
Vcc
V
W
Vss
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vcc
Vss
Vcc
Vss
W
1
2
3
4
5
6
7
8
9
10
11
Ground
CNTRL
Array Power
UNPOPULATED
Address
Level REF.
NC
RFU
Data I/O
AS4DDR264M65PBG1
Rev. 0.5 06/08
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BGA Locations
P6
C9,C10,D10,D11,T1,T2,
U2,U3
T8, D4
V5, B7
U5, C7
U6, C6
T9, D3
G5,H1,M11,N7
F1,F2,P10,P11
H9,H10,M2,M3
H7,H11,M1,M5
E8,E9,R3,R4
F10,F11,P1,P2
J2,J3,J4,J8,J9, K2,
K3,K9,L2,L3,L4,L9,L10
Symbol
ODT
CKx, CKx\
Type
CNTL Input
CNTL Input
Description
On-Die-Termination: Registered High enables on data bus termination
Differential input clocks, one set for each x16bits
CKE
CS\
RASx\
CASx\
WE\
UDMx
LDMx
UDQSx
UDQSx\
LDQSx
LDQSx\
Ax
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
CNTL Input
Input
Clock enable which activates all on silicon clocking circuitry
Chip Selects, one for each 16 bits of the data bus width
Command input which along with CAS\, WE\ and CS\ define operations
Command input which along with RAS\, WE\ and CS\ define operations
Command input which along with RAS\, CAS\ and CS\ define operations
One Data Mask cntl. for each upper 8 bits of a x16 word
One Data Mask cntl. For each lower 8 bits of a x16 word
Data Strobe input for upper byte of each x16 word
Differential input of UDQSx, only used when Differential DQS mode is enabled
Data Strobe input for lower byte of each x16 word
Differential input of LDQSx, only used when Differential DQS mode is enabled
Array Address inputs providing ROW addresses for Active commands, and
the column address and auto precharge bit (A10) for READ/WRITE commands
J10
RFU
Future Input
L8,K10,E5
BA0,BA1,BA2
Input
C8,D1,D2,D7,D8,D9,E1,
DQx
Input/Output
E2,E3,E7,E10,E11,F3,
F4,F5,F7,F8,F9,G1,G2,
G3,G4,G7,G8,G9,G10,
G11,H2,H3,H4,H5,H8,
M4,M7,M8,M9,M10,N1,
N2,N3,N4,N5,N8,N9,
N10,N11,P3,P4,P5,P7,
P8,P9,R1,R2,R5,R9,
R10,R11,T3,T4,T5,
T10,T11,U4
H6
Vref
Supply
A2,A4,A5,A7,A8,A10,
VCC
Supply
B1,B11,H6,J1,J5,J7,J11,
K4,K8,L1,L5,L7,L11,M6,
V1,V11,W2,W4,W5,
W7,W8,W10
A3,A6,A9,A11,B2,B10,
VSS
Supply
C1,C11,G6,J6,K1,K5,
K7,K11,L6,N6,U1,U11,
V2,V10,W1,W3,W6,
W9,W11
B3,B4,B5,B6,B8,B9,
NC
C2,C3,C4,C5,D5,D6,E4,
E6, F6, R6,R7,R8,
T6,T7,U7,U8,U9,U10,
V3,V4,V6,V7,V8,V9
A1
UNPOPULATED
AS4DDR264M65PBG1
Rev. 0.5 06/08
Bank Address inputs
Data bidirectional input/Output pins
SSTL_18 Voltage Reference
Core Power Supply
Core Ground return
No connection
Unpopulated ball matrix location (location registration aid)
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b SDRAM-DDR2
Gb
Austin Semiconductor, Inc. AS4DDR264M65PBG1
DESCRIPTION
An auto precharge function may be enabled to provide a
self-timed row precharge that is initiated at the end of the
burst access.
The 4.2Gb DDR2 SDRAM, a high-speed CMOS, dynamic
random-access memory containing 4,294,967,296 bits.
Each of the four chips in the MCP are internally configured
as 8-bank DRAM. The block diagram of the device is
shown in Figure 2. Ball assignments and are shown in
Figure 3.
As with standard DDR SDRAMs, the pipelined, multibank
architecture of DDR2 SDRAMs allows for concurrent
operation, thereby providing high, effective bandwidth by
hiding row precharge and activation time.
The 4.2Gb DDR2 SDRAM uses a double-data-rate
architecture to achieve high-speed operation. The double
data rate architecture is essentially a 4 n -prefetch
architecture, with an interface designed to transfer two
data words per clock cycle at the I/O balls. A single read
or write access for the x64 DDR2 SDRAM effectively
consists of a single 4n-bit-wide, one-clock-cycle data
transfer at the internal DRAM core and four corresponding
n-bit-wide, one-half-clock-cycle data transfers at the I/O
balls.
A self refresh mode is provided, along with a power-saving
power-down mode.
All inputs are compatible with the JEDEC standard for
SSTL_18. All full drive-strength outputs are SSTL_18compatible.
GENERAL NOTES
• The functionality and the timing specifications
discussed in this data sheet are for the DLLenabled
mode of operation.
• Throughout the data sheet, the various figures and
text refer to DQs as DQ. The DQ term is to be
interpreted as any and all DQ collectively, unless
specifically stated otherwise. Additionally, each chip
is divided into 2 bytes, the lower byte and upper
byte. For the lower byte (DQ0 CDQ7), DM refers to
LDM and DQS refers to LDQS. For the upper byte
(DQ8 CDQ15), DM refers to UDM and DQS refers to
UDQS.
• Complete functionality is described throughout
the document and any page or diagram may have
been simplified to convey a topic and may not be
inclusive of all requirements.
• Any specific requirement takes precedence over a
general statement.
A bidirectional data strobe (DQS, DQS#) is transmitted
externally, along with data, for use in data capture at the
receiver. DQS is a strobe transmitted by the DDR2
SDRAM during READs and by the memory controller
during WRITEs. DQS is edge-aligned with data for READs
and center-aligned with data for WRITEs. There are
strobes, one for the lower byte (LDQS, LDQS#) and one
for the upper byte (UDQS, UDQS#).
The MCP DDR2 SDRAM operates from a differential clock
(CK and CK#); the crossing of CK going HIGH and CK#
going LOW will be referred to as the positive edge of CK.
Commands (address and control signals) are registered
at every positive edge of CK. Input data is registered on
both edges of DQS, and output data is referenced to both
edges of DQS, as well as to both edges of CK.
Read and write accesses to the DDR2 SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of an ACTIVE command, which is then followed
by a READ or WRITE command. The address bits
registered coincident with the ACTIVE command are used
to select the bank and row to be accessed. The address
bits registered coincident with the READ or WRITE
command are used to select the bank and the starting
column location for the burst access.
INITIALIZATION
DDR2 SDRAMs must be powered up and initialized
in a predefined manner. Operational procedures other
than those specified may result in undefined operation.
The following sequence is required for power up and
initialization and is shown in Figure 4 on page 5.
The DDR2 SDRAM provides for programmable read or
write burst lengths of four or eight locations. DDR2
SDRAM supports interrupting a burst read of eight with
another read, or a burst write of eight with another write.
AS4DDR264M65PBG1
Rev. 0.5 06/08
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FIGURE 4 - POWER-UP AND INITIALIZATION
Notes appear on page 7
VDD
VDDL
VDDQ
t VTD1
VTT1
VREF
T0
tCK
Ta0
Tb0
Tc0
Td0
Te0
Tf0
Tg0
Th0
Ti0
Tj0
Tk0
Tl0
Tm0
NOP4
PRE
LM 5
LM 6
LM 7
LM 8
PRE9
REF10
REF
LM 11
LM 12
LM 13
Vali d16
A10 = 1
Code
Code
Code
Code
A10 = 1
Code
Code
Code
Vali d
CK#
CK
tCL
tCL
LVCMOS 2 SSTL_18 2
CKE LOW LEVEL LOW LEVEL
ODT
3
Comman d
15
DM
3
Address
15
High-Z
15
High-Z
RTT
High-Z
DQS
DQ
T = 200µs (MIN)
Power-up:
VDD and stable
clo ck (CK, CK#)
T = 400ns
(MIN) 16
t MRD
t RPA
t MRD
t MRD
t MRD
t RPA
t RFC
t RFC
t MRD
t MRD
t MRD
See note 17
EMR(2)
EMR(3)
EMR
MR without
DLL RESET
EMR with
OCD default
EMR with
OCD exit
200 cycles of CK are re quire d before a READ comman d can be issued.
MR with
DLL RESET
Indicates a break in
time s cale
AS4DDR264M65PBG1
Rev. 0.5 06/08
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Normal
operation
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NOTES:
1. Applying power; if CKE is maintained below 0.2 x VCCQ, outputs
remain disabled. To guarantee RTT (ODT resistance) is off, VREF
must be valid and a low level must be applied to the ODT ball (all
other inputs may be undefined, I/Os and outputs must be less
than VCCQ during voltage ramp time to avoid DDR2 SDRAM device
latch-up). VTT is not applied directly to the device; however,
tVTD should be ³0 to avoid device latch-up. At least one of the
following two sets of conditions (A or B) must be met to obtain a
stable supply state (stable supply defined as VCC, VCCQ,VREF,
and VTT are between their minimum and maximum values as
stated in DC Operating Conditionstable):
6. Issue a LOAD MODE command to the EMR(3). To issue an EMR(3)
command, provide HIGH to BA0 and BA1; remaining EMR(3) bits
must be “0.” See “Extended Mode Register 3 (EMR 3)” on page 13
for all EMR(3) requirements.
7. Issue a LOAD MODE command to the EMR to enable DLL. To issue
a DLL ENABLE command, provide LOW to BA1 and A0; provide
HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Austin
recommends setting them to “0;” remaining EMR bits must be “0.
”See “Extended Mode Register (EMR)” on page 10 for all EMR
requirements.
8. Issue a LOAD MODE command to the MR for DLL RESET. 200
cycles of clock input is required to lock the DLL. To issue a DLL
RESET, provide HIGH to A8 and provide LOW to BA1 and BA0;
CKE must be HIGH the entire time the DLL is resetting; remaining
MR bits must be “0.” See “Mode Register (MR)” on page 7 for all
MR requirements.
9. Issue PRECHARGE ALL command.
10. Issue two or more REFRESH commands.
11. Issue a LOAD MODE command to the MR with LOW to A8 to
initialize device operation (that is, to program operating parameters
without resetting the DLL). To access the MR, set BA0 and BA1
LOW; remaining MR bits must be set to desired settings. See
“Mode Register (MR)” on page 7 for all MR requirements.
12. Issue a LOAD MODE command to the EMR to enable OCD
default by setting bits E7, E8, and E9 to “1,” and then setting all
other desired parameters. To access the EMR, set BA0 LOW
and BA1 HIGH (see “Extended Mode Register (EMR)” on page 10
for all EMR requirements).
13. Issue a LOAD MODE command to the EMR to enable OCD exit by
setting bits E7, E8, and E9 to “0,” and then setting all other desired
parameters. To access the extended mode registers, EMR, set
BA0 LOW and BA1 HIGH for all EMR requirements.
14. The DDR2 SDRAM is now initialized and ready for normal
operation 200 clock cycles after the DLL RESET at Tf0.
15. DM represents UDM, LDM collectively for each die x16
configuration. DQS represents UDQS, USQS, LDQS, LDQS for
each die x16 configuration. DQ represents DQ0-DQ15 for each
die x16 configuration.
16. Wait a minimum of 400ns then issue a PRECHARGE ALL command.
A. (single power source) The VCC voltage ramp from 300mV to
VCC(MIN) must take no longer than 200ms; during the VCC
voltage ramp, |VCC - VCCQ| < 0.3V. Once supply voltage
ramping is complete (when VCCQ crosses VCC (MIN), DC
Operating Conditions table specifications apply.
• VCC, VCCQ are driven from a single power converter output
• VTT is limited to 0.95V MAX
• VREF tracks VCCQ/2; VREF must be within ±3V with respect
to VCCQ/2 during supply ramp time.
• VCCQ > VREF at all times
B. (multiple power sources) VCC e” VCCQ must be maintained
during supply voltage ramping, for both AC and DC levels, until
supply voltage ramping completes (VCCQ crosses VCC [MIN]).
Once supply voltage ramping is complete, DC Operating
Conditions table specifications apply.
• Apply VCC before or at the same time as VCCQ; VCC voltage
ramp time must be < 200ms from when VCC ramps from
300mV to VCC (MIN)
• Apply VCCQ before or at the same time as VTT; the VCCQ
voltage ramp time from when VCC (MIN) is achieved to when
VCCQ (MIN) is achieved must be < 500ms; while VCC is
ramping, current can be supplied from VCC through the device
to VCCQ
• VREF must track VCCQ/2, VREF must be within ±0.3V with
respect to VCCQ/2 during supply ramp time; VCCQ > VREF
must be met at all times
• Apply VTT; The VTT voltage ramp time from when VCCQ
(MIN) is achieved to when VTT (MIN) is achieved must be no
greater than 500ms
2. CKE requires LVCMOS input levels prior to state T0 to ensure
DQs are High-Z during device power-up prior to VREF being
stable. After state T0, CKE is required to have SSTL_18 input
levels. Once CKE transitions to a high level, it must stay HIGH for
the duration of the initialization sequence.
3. A10 = PRECHARGE ALL, CODE = desired values for mode
registers (bank addresses are required to be decoded).
4. For a minimum of 200µs after stable power and clock (CK, CK#),
apply NOP or DESELECT commands, then take CKE HIGH.
5. Issue a LOAD MODE command to the EMR(2). To issue an EMR(2)
command, provide LOW to BA0, and provide HIGH to BA1; set
register E7 to “0” or “1” to select appropriate self refresh rate;
remaining EMR(2) bits must be “0” (see “Extended Mode Register
2 (EMR2)” on page 84 for all EMR(2) requirements).
AS4DDR264M65PBG1
Rev. 0.5 06/08
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MODE REGISTER (MR)
FIGURE 5 – MODE REGISTER (MR) DEFINITION
The mode register is used to define the specific mode of
operation of the DDR2 SDRAM. This definition includes the
selection of a burst length, burst type, CL, operating mode,
DLL RESET, write recovery, and power-down mode, as
shown in Figure 5. Contents of the mode register can be
altered by re-executing the LOAD MODE (LM) command. If
the user chooses to modify only a subset of the MR variables,
all variables (M0–M14) must be programmed when the
command is issued.
12
12
BA2 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
16 15 14 n 12 11 10
1
0
MR
WR
0 PD
M12
0
The mode register is programmed via the LM command
(bits BA2–BA0 = 0, 0,0) and other bits (M13–M0) will retain
the stored information until it is programmed again or the
device loses power (except for bit M8, which is selfclearing).
Reprogramming the mode register will not alter the contents
of the memory array, provided it is performed correctly.
1
M15 M16
Burst length is defined by bits M0–M3, as shown in Figure
5. Read and write accesses to the DDR2 SDRAM are burstoriented, with the burst length being programmable to either
four or eight. The burst length determines the maximum
number of column locations that can be accessed for a given
READ or WRITE command.
7
6
5
4
3
2
1
0
Mode Register (Mx)
M2 M1 M0 Burst Length
M7 Mode
Slow exit
(low power)
The LM command can only be issued (or reissued) when all
banks are in the precharged state (idle state) and no bursts
are in progress. The controller must wait the specified time
tMRD before initiating any subsequent operations such as
an ACTIVE command. Violating either of these requirements
will result in unspecified operation.
8
DLL TM CAS# Latency BT Burst Length
PD Mode
Fast exit
(normal)
M11 M10 M9
BURST LENGTH
9
Address Bus
0 Normal
0
0
0
Reserved
1
0
0
1
Reserved
0
1
0
4
0
1
1
8
Test
M8 DLL Reset
0
No
1
0
0
Reserved
1
Yes
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
Write Recovery
0
0
0
Reserved
0
0
1
2
M3
0
1
0
3
0
Sequential
0
1
1
4
1
Interleaved
1
0
0
5
1
0
1
6
1
1
0
7
1
1
1
8
M6 M5 M4
Mode Register Definition
0
0
Mode register (MR)
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Burst Type
CAS Latency (CL)
0
0
0
Reserved
0
0
1
Reserved
0
1
0
Reserved
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
7
Notes:
1.A13 Not used on this part, and must be programmed to ‘0’ on
this part.
2.BA2 must be programmed to “0” and is reserved for future use.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning
that the burst will wrap within the block if a boundary is
reached. The block is uniquely selected by A2–Ai when BL =
4 and by A3–Ai when BL = 8 (where Ai is the most significant
column address bit for a given configuration). The remaining
(least significant) address bit(s) is (are) used to select the
starting location within the block. The programmed burst
length applies to both READ and WRITE bursts.
BURST TYPE
Accesses within a given burst may be programmed to be
either sequential or interleaved. The burst type is selected
via bit M3, as shown in Figure 5. The ordering of accesses
within a burst is determined by the burst length, the burst
type, and the starting column address, as shown in Table
2. DDR2 SDRAM supports 4-bit burst mode and 8-bit burst
mode only. For 8-bit burst mode, full interleave address
ordering is supported; however, sequential address ordering
is nibble-based.
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TABLE 2 - BURST DEFINITION
Burst
Length
Type = Sequential
Type = Interleaved
DLL RESET is defined by bit M8, as shown in Figure 5.
Programming bit M8 to “1” will activate the DLL RESET
function. Bit M8 is self-clearing, meaning it returns back
to a value of “0” after the DLL RESET function has been
issued.
A1
A0
0
0
0-1-2-3
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
2-3-0-1
1
1
3-0-1-2
3-2-1-0
A2
A1
A0
0
0
0
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7
0
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
0
4-5-6-7-0-1-2-3
4-5-6-7-0-1-2-3
WRITE RECOVERY
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Write recovery (WR) time is defined by bits M9-M11, as shown
in Figure 5. The WR register is used by the DDR2 SDRAM
during WRITE with auto precharge operation. During WRITE
with auto precharge operation, the DDR2 SDRAM delays
the internal auto precharge operation by WR clocks
(programmed in bits M9-M11) from the last data burst.
4
8
DLL RESET
Order of Accesses Within a Burst
Starting Column
Address
Anytime the DLL RESET function is used, 200 clock cycles
must occur before a READ command can be issued to allow
time for the internal clock to be synchronized with the external
clock. Failing to wait for synchronization to occur may result
in a violation of the tAC or tDQSCK parameters.
NOTES:
1. For a burst length of two, A1-Ai select two-data-element block;
A0 selects the starting column within the block.
2. For a burst length of four, A2-Ai select four-data-element block;
A0-1 select the starting column within the block.
3. For a burst length of eight, A3-Ai select eight-data-element block;
A0-2 select the starting column within the block.
4. Whenever a boundary of the block is reached within a given
sequence above, the following access wraps within the block.
WR values of 2, 3, 4, 5, 6 or 7 clocks may be used for
programming bits M9-M11. The user is required to program
the value of WR, which is calculated by dividing tWR (in ns)
by tCK (in ns) and rounding up a non integer value to the next
integer; WR [cycles] = tWR [ns] / tCK [ns]. Reserved states
should not be used as unknown operation or incompatibility
with future versions may result.
OPERATING MODE
The normal operating mode is selected by issuing a
command with bit M7 set to “0” and all other bits set to
the desired values, as shown in Figure 5. When bit M7 is
“1,” no other bits of the mode register are programmed.
Programming bit M7 to “1” places the DDR2 SDRAM into a
test mode that is only used by the manufacturer and should
not be used. No operation or functionality is guaranteed
if M7 bit is “1.”
POWER-DOWN MODE
Active power-down (PD) mode is defined by bit M12, as
shown in Figure 5. PD mode allows the user to determine
the active power-down mode, which determines
performance versus power savings. PD mode bit M12 does
not apply to precharge PD mode.
When bit M12 = 0, standard active PD mode or “fast-exit”
active PD mode is enabled. The tXARD parameter is used
for fast-exit active PD exit timing. The DLL is expected to be
enabled and running during this mode.
When bit M12 = 1, a lower-power active PD mode or “slowexit”
active PD mode is enabled. The tXARD parameter is used
for slow-exit active PD exit timing. The DLL can be enabled,
but “frozen” during active PD mode since the exit-to-READ
command timing is relaxed. The power difference expected
between PD normal and PD low-power mode is defined in
the ICC table.
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CAS LATENCY (CL)
DDR2 SDRAM also supports a feature called posted CAS
additive latency (AL). This feature allows the READ command
to be issued prior to tRCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks.
The CAS latency (CL) is defined by bits M4-M6, as shown
in Figure 5. CL is the delay, in clock cycles, between the
registration of a READ command and the availability of the
first bit of output data. The CL can be set to 3, 4, 5, 6 or 7
clocks, depending on the speed grade option being used.
Examples of CL = 3 and CL = 4 are shown in Figure 6; both
assume AL = 0. If a READ command is registered at clock
edge n, and the CL is m clocks, the data will be available
nominally coincident with clock edge n+m (this assumes
AL = 0).
DDR2 SDRAM does not support any half-clock latencies.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
FIGURE 6 - CAS LATENCY (CL)
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
CL = 3 (AL = 0)
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
DQS, DQS#
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
CL = 4 (AL = 0)
Transitioning data
Notes:
AS4DDR264M65PBG1
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Don’t care
1. BL = 4.
2. Posted CAS# additive latency (AL) = 0.
3. Shown with nominal t AC, t DQSCK, and t DQSQ.
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EXTENDED MODE REGISTER (EMR)
until it is programmed again or the device loses power.
Reprogramming the EMR will not alter the contents of the
memory array, provided it is performed correctly.
The extended mode register controls functions beyond
those controlled by the mode register; these additional
functions are DLL enable/disable, output drive strength, on
die termination (ODT) (RTT), posted AL, off-chip driver
impedance calibration (OCD), DQS# enable/disable,
RDQS/RDQS# enable/disable, and output disable/enable.
These functions are controlled via the bits shown in Figure
7. The EMR is programmed via the LOAD MODE (LM)
command and will retain the stored information
The EMR must be loaded when all banks are idle and no bursts
are in progress, and the controller must wait the specified time
tMRD before initiating any subsequent operation. Violating either
of these requirements could esult in unspecified operation.
FIGURE 7 – EXTENDED MODE REGISTER DEFINITION
1
22
BA2 3 BA1 BA0 An A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
0
A1 A0
8 7 6 5 4 3 2
1 0
15 14 n 12 11 10 9
MRS 0 2 Out RDQS DQS# OCD Program RTT Posted CAS# RTT ODS DLL
Address bus
Extended mode
register (Ex)
E12
Outputs
E0
DLL Enable
0
Enabled
E6 E2 RTT (Nominal)
0
Enable (normal)
1
Disabled
0 0
RTT disabled
1
Disable (test/debug)
0 1
75:
1 0
150:
E1
1 1
50:
0
E11 RDQS Enable
0
No
1
Yes
Full (100%)
Reduced (40-60%)
1
E10 DQS# Enable
E5 E4 E3 Posted CAS# Additive Latency (AL)
0
Enable
0
0
0
0
1
Disable
0
0
1
1
0
1
0
2
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
6
1
1
1
Reserved
E9 E8 E7 OCD Operation
E15 E14
Output Drive Strength
0
0
0
OCD exit
0
0
1
Reserved
0
1
0
Reserved
1
0
0
Reserved
1
1
1
Enable OCD defaults
4
Mode Register Set
0
0
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Mode register (MR)
Notes:
1.During initialization, all three bits must be set to “1” for OCD default state, then must be set to “0” before
initialization is finished, as detailed in the initialization procedure.
2.E13 (A13) must be programmed to “0” and is reserved for future use.
3.E16 must be programmed to “0” and is reserved for future use.
4.Not all AL options are supported in any individual speed grade.
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DLL ENABLE/DISABLE
OUTPUT ENABLE/DISABLE
The DLL may be enabled or disabled by programming bit
E0 during the LM command, as shown in Figure 7. The DLL
must be enabled for normal operation. DLL enable is
required during power-up initialization and upon returning
to normal operation after having disabled the DLL for the
purpose of debugging or evaluation. Enabling the DLL should
always be followed by resetting the DLL using an LM
command.
The OUTPUT ENABLE function is defined by bit E12, as
shown in Figure 7. When enabled (E12 = 0), all outputs
(DQs, DQS, DQS#, RDQS, RDQS#) function normally. When
disabled (E12 = 1), all DDR2 SDRAM outputs (DQs, DQS,
DQS#, RDQS, RDQS#) are disabled, thus removing output
buffer current. The output disable feature is intended to be
used during ICC characterization of read current.
ON-DIE TERMINATION (ODT)
The DLL is automatically disabled when entering SELF
REFRESH operation and is automatically re-enabled and
reset upon exit of SELF REFRESH operation. Any time the
DLL is enabled (and subsequently reset), 200 clock cycles
must occur before a READ command can be issued, to
allow time for the internal clock to synchronize with the
external clock. Failing to wait for synchronization to occur
may result in a violation of the tAC or tDQSCK parameters.
ODT effective resistance, RTT (EFF), is defined by bits E2
and E6 of the EMR, as shown in Figure 7. The ODT feature is
designed to improve signal integrity of the memory channel
by allowing the DDR2 SDRAM controller to independently
turn on/off ODT for any or all devices. RTT effective resistance
values of 50Ω, 75Ω, and 150Ω are selectable and apply to
each DQ, DQS/DQS#, RDQS/ RDQS#, UDQS/UDQS#, LDQS/
LDQS#, DM, and UDM/ LDM signals. Bits (E6, E2) determine
what ODT resistance is enabled by turning on/off “sw1,”
“sw2,” or “sw3.” The ODT effective resistance value is elected
by enabling switch “sw1,” which enables all R1 values that
are 150Ω each, enabling an effective resistance of 75Ω
(RTT2(EFF) = R2/2). Similarly, if “sw2” is enabled, all R2 values
that are 300Ω each, enable an effective ODT resistance of
150Ω (RTT2(EFF) = R2/2). Switch “sw3” enables R1 values
of 100Ω enabling effective resistance of 50Ω Reserved
states should not be used, as unknown operation or
incompatibility with future versions may result.
OUTPUT DRIVE STRENGTH
The output drive strength is defined by bit E1, as shown in
Figure 7. The normal drive strength for all outputs are
specified to be SSTL_18. Programming bit E1 = 0 selects
normal (full strength) drive strength for all outputs. Selecting
a reduced drive strength option (E1 = 1) will reduce all outputs
to approximately 45-60 percent of the SSTL_18 drive strength.
This option is intended for the support of lighter load and/or
point-to-point environments.
The ODT control ball is used to determine when RTT(EFF)
is turned on and off, assuming ODT has been enabled via
bits E2 and E6 of the EMR. The ODT feature and ODT input
ball are only used during active, active power-down (both
fast-exit and slow-exit modes), and precharge powerdown
modes of operation. ODT must be turned off prior to entering
self refresh. During power-up and initialization of the DDR2
SDRAM, ODT should be disabled until issuing the EMR
command to enable the ODT feature, at which point the ODT
ball will determine the RTT(EFF) value. Any time the EMR
enables the ODT function, ODT may not be driven HIGH until
eight clocks after the EMR has been enabled. See “ODT
Timing” section for ODT timing diagrams.
DQS# ENABLE/DISABLE
The DQS# ball is enabled by bit E10. When E10 = 0, DQS# is
the complement of the differential data strobe pair DQS/
DQS#. When disabled (E10 = 1), DQS is used in a single
ended mode and the DQS# ball is disabled. When disabled,
DQS# should be left floating. This function is also used to
enable/disable RDQS#. If RDQS is enabled (E11 = 1) and
DQS# is enabled (E10 = 0), then both DQS# and RDQS# will
be enabled.
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POSTED CAS ADDITIVE LATENCY (AL)
Posted CAS additive latency (AL) is supported to make the
command and data bus efficient for sustainable bandwidths
in DDR2 SDRAM. Bits E3–E5 define the value of AL, as
shown in Figure 7. Bits E3–E5 allow the user to program
the DDR2 SDRAM with an inverse AL of 0, 1, 2, 3, 4, 5 or 6
clocks. Reserved states should not be used as unknown
operation or incompatibility with future versions may result.
In this operation, the DDR2 SDRAM allows a READ or WRITE
command to be issued prior to t RCD (MIN) with the
requirement that AL = tRCD (MIN). A typical application using
this feature would set AL = tRCD (MIN) - 1x tCK. The READ or
WRITE command is held for the time of the AL before it is
issued internally to the DDR2 SDRAM device. RL is controlled
by the sum of AL and CL; RL = AL+CL. Write latency (WL) is
equal to RL minus one clock; WL = AL + CL - 1 x tCK.
FIGURE 8 - EXTENDED MODE REGISTER 2 (EMR2) DEFINITION
1
2
BA2 BA1 BA0 An 1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
0
E15 E14
15 14 n
MRS 0
12 11
0 0
10 9 8 7 6
0 0 SRT 0
0
5 4 3 2
0 0 0 0
A1 A0
1
0
Mode Register Set
E7
SRT Enable
1X refresh rate (0°C to 85°C)
2X refresh rate (>85°C)
0
0
Mode register (MR)
0
0
1
Extended mode register (EMR)
1
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
0
0
Address bus
Extended mode
register (Ex)
Notes:
1.E16 bit (BA2) must be programmed to “0” and is reserved for future use.
2.Mode bits (En) with corresponding address balls (An) greater than A12 are reserved for future use and must be programmed to “0.”
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FIGURE 9 - EXTENDED MODE REGISTER 3 (EMR3) DEFINITION
1
2
BA22 BA1 BA0 An1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2
16
15 14 n
12 11
10
9
0
MRS
0
0
0
E15 E14
0
0
8
0
7
6
5
4
3
0
0
0
0
0
2
0
A1 A0
1
0
0
0
Address bus
Extended mode
register (Ex)
Mode Register Set
0
0
0
1
Extended mode register (EMR)
1
0
Extended mode register (EMR2)
1
1
Extended mode register (EMR3)
Mode register (MR)
Notes:
1.Mode bits (En) with corresponding address balls (An) greater than A12 are reserved for future use and must be programmed to “0.”
2.E16 (BA2) must be programmed to “0” on this device and is reserved for future use.
EXTENDED MODE REGISTER 2
The extended mode register 2 (EMR2) controls functions
beyond those controlled by the mode register. Currently all
bits in EMR2 are reserved, as shown in Figure 8. The EMR2
is programmed via the LM command and will retain the stored
information until it is programmed again or the device loses
power. Reprogramming the EMR will not alter the contents
of the memory array, provided it is performed correctly.
EMR3 must be loaded when all banks are idle and no bursts
are in progress, and the controller must wait the specifi ed
time t MRD before initiating any subsequent operation.
Violating either of these requirements could result in
unspecified operation.
COMMAND TRUTH TABLES
The following tables provide a quick reference of DDR2
SDRAM available commands, including CKE power-down
modes, and bank-to-bank commands.
EMR2 must be loaded when all banks are idle and no bursts
are in progress, and the controller must wait the specified
time t MRD before initiating any subsequent operation.
Violating either of these requirements could result in
unspecified operation.
EXTENDED MODE REGISTER 3
The extended mode register 3 (EMR3) controls functions
beyond those controlled by the mode register. Currently, all
bits in EMR3 are reserved, as shown in Figure 9. The EMR3
is programmed via the LM command and will retain the stored
information until it is programmed again or the device loses
power. Reprogramming the EMR will not alter the contents
of the memory array, provided it is performed correctly.
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TABLE 3 - TRUTH TABLE - DDR2 COMMANDS
CKE
Function
Previous
Cycle
Current
Cycle
CS#
RAS#
CAS#
WE#
BA2 thru
BA0
A12
A11
A10
A9-A0
OP CODE
Notes
LOAD MODE
H
H
L
L
L
L
BA
REFRESH
H
H
L
L
L
H
X
X
X
X
2
SELF-REFRESH Entry
H
L
L
L
L
H
X
X
X
X
SELF-REFRESH exit
L
H
X
X
X
X
7
Single Bank Precharge
H
2
All banks PRECHARGE
H
Bank Activate
H
H
X
X
X
L
H
H
H
H
L
L
H
L
X
X
L
X
H
L
L
H
L
X
X
H
X
H
L
L
H
L
BA
ROW ADDRESS
Column
Address
Column
Address
Column
Address
Column
Address
Column
Address
Column
Address
Column
Address
Column
Address
L
2,3
WRITE
H
H
L
L
H
L
BA
WRITE with auto precharge
H
H
L
H
L
L
BA
READ
H
H
L
H
L
H
BA
READ with auto precharge
H
H
L
H
L
H
BA
NO OPERATION
H
X
L
H
H
H
X
X
X
X
Device DESELECT
H
X
H
X
X
X
X
X
X
X
H
X
X
X
L
H
H
H
X
X
X
X
4
X
X
X
X
4
POWER-DOWN entry
H
L
POWER-DOWN exit
L
H
H
X
X
X
L
H
H
H
H
L
L
2,3
2,3
2,3
Note: 1. All DDR2-SDRAM commands are defined by staes of CS#, RAS#, CAS#, WE#, and CKE a the
rising edge of the clock.
2. Bank addresses (BA) BA2-BA0 determine which bank is to be operated upon. BA during a LM
command selects which mode register is programmed.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted.
4. The power down mode does not perform any REFRESH operations. The duration of power down
is therefore limited by the refresh requirements outlined in the AC parametric section.
5. The state of ODT does not effect the states described in this table. The ODT function is not available
during self refresh. See “On Die Termination (ODT)” for details.
6. “X” means “H or L” (but a defined logic level)
7. Self refresh exit is asynchronous.
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DESELECT
The DESELECT function (CS# HIGH) prevents new
commands from being executed by the DDR2 SDRAM. The
DDR2 SDRAM is effectively deselected. Operations already
in progress are not affected.
A subsequent ACTIVE command to a different row in the
same bank can only be issued after the previous active row
has been closed (precharged). The minimum time interval
between successive ACTIVE commands to the same bank
is defined by tRC
NO OPERATION (NOP)
A subsequent ACTIVE command to another bank can be
issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum
time interval between successive ACTIVE commands to
different banks is defined by tRRD.
The NO OPERATION (NOP) command is used to instruct
the selected DDR2 SDRAM to perform a NOP (CS# is LOW;
RAS#, CAS#, and WE are HIGH). This prevents unwanted
commands from being registered during idle or wait states.
Operations already in progress are not affected.
LOAD MODE (LM)
The mode registers are loaded via inputs BA2–BA0, and
A12–A0. BA2–BA0 determine which mode register will be
programmed. See “Mode Register (MR)”. The LM command
can only be issued when all banks are idle, and a
subsequent execute able command cannot be issued until
tMRD is met.
FIGURE 10 - ACTIVE COMMAND
CK#
CK
BANK/ROW ACTIVATION
ACTIVE COMMAND
CKE
The ACTIVE command is used to open (or activate) a row in
a particular bank for a subsequent access. The value on the
BA2–BA0 inputs selects the bank, and the address provided
on inputs A12–A0 selects the row. This row remains active
(or open) for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be
issued before opening a different row in the same bank.
CS#
RAS#
CAS#
ACTIVE OPERATION
WE#
Before any READ or WRITE commands can be issued to a
bank within the DDR2 SDRAM, a row in that bank must be
opened (activated), even when additive latency is used. This
is accomplished via the ACTIVE command, which selects
both the bank and the row to be activated.
ADDRESS
Row
BANK ADDRESS
Bank
After a row is opened with an ACTIVE command, a READ or
WRITE command may be issued to that row, subject to the
tRCD specification. tRCD (MIN) should be divided by the
clock period and rounded up to the next whole number to
determine the earliest clock edge after the ACTIVE command
on which a READ or WRITE command can be entered. The
same procedure is used to convert other specification limits
from time units to clock cycles. For example, a tRCD (MIN)
specification of 20ns with a 266 MHz clock (tCK = 3.75ns)
results in 5.3 clocks, rounded up to 6.
AS4DDR264M65PBG1
Rev. 0.5 06/08
DON’T CARE
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READ COMMAND
The READ command is used to initiate a burst read access
to an active row. The value on the BA2–BA0 inputs selects
the bank, and the address provided on inputs A0–i (where
i = A9) selects the starting column location. The value on
input A10 determines whether or not auto precharge is used.
If auto precharge is selected, the row being accessed will
be precharged at the end of the READ burst; if auto precharge
is not selected, the row will remain open for subsequent
accesses.
FIGURE 11 - READ COMMAND
READ OPERATION
READ bursts are initiated with a READ command. The starting
column and bank addresses are provided with the READ
command and auto precharge is either enabled or disabled
for that burst access. If auto precharge is enabled, the row
being accessed is automatically precharged at the
completion of the burst. If auto precharge is disabled, the
row will be left open after the completion of the burst.
CK#
CK
CKE
CS#
During READ bursts, the valid data-out element from the
starting column address will be available READ latency (RL)
clocks later. RL is defined as the sum of AL and CL; RL = AL
+ CL. The value for AL and CL are programmable via the MR
and EMR commands, respectively. Each subsequent dataout element will be valid nominally at the next positive or
negative clock edge (i.e., at the next crossing of CK and
CK#).
RAS#
CAS#
WE#
ADDRESS
DQS/DQS# is driven by the DDR2 SDRAM along with output
data. The initial LOW state on DQS and HIGH state on DQS#
is known as the read preamble (tRPRE). The LOW state on
DQS and HIGH state on DQS# coincident with the last dataout element is known as the read postamble (tRPST).
Col
ENABLE
AUTO PRECHARGE
A10
DISABLE
BANK ADDRESS
Bank
Upon completion of a burst, assuming no other commands
have been initiated, the DQ will go High-Z.
DON’T CARE
Data from any READ burst may be concatenated with data
from a subsequent READ command to provide a continuous
flow of data. The first data element from the new burst follows
the last element of a completed burst. The new READ
command should be issued x cycles after the first READ
command, where x equals BL / 2 cycles.
AS4DDR264M65PBG1
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WRITE COMMAND
The WRITE command is used to initiate a burst write access
to an active row. The value on the BA2–BA0 inputs selects
the bank, and the address provided on inputs A0–9 selects
the starting column location. The value on input A10
determines whether or not auto precharge is used. If auto
precharge is selected, the row being accessed will be
precharged at the end of the WRITE burst; if auto precharge
is not selected, the row will remain open for subsequent
accesses.
The time between the WRITE command and the fi rst rising
DQS edge is WL ± tDQSS. Subsequent DQS positive rising
edges are timed, relative to the associated clock edge, as ±
tDQSS. tDQSS is specified with a relatively wide range (25
percent of one clock cycle). All of the WRITE diagrams show
the nominal case, and where the two extreme cases (tDQSS
[MIN] and tDQSS [MAX]) might not be intuitive, they have also
been included. Upon completion of a burst, assuming no
other commands have been initiated, the DQ will remain
High-Z and any additional input data will be ignored.
Input data appearing on the DQ is written to the memory
array subject to the DM input logic level appearing coincident
with the data. If a given DM signal is registered LOW, the
corresponding data will be written to memory; if the DM signal
is registered HIGH, the corresponding data inputs will be
ignored, and a WRITE will not be executed to that byte/column
location.
Data for any WRITE burst may be concatenated with a
subsequent WRITE command to provide continuous flow of
input data. The fi rst data element from the new burst is
applied after the last element of a completed burst. The new
WRITE command should be issued x cycles after the first
WRITE command, where x equals BL/2.
WRITE OPERATION
DDR2 SDRAM supports concurrent auto precharge options,
as shown in Table 4.
DDR2 SDRAM does not allow interrupting or truncating any
WRITE burst using BL = 4 operation. Once the BL = 4 WRITE
command is registered, it must be allowed to complete the
entire WRITE burst cycle. However, a WRITE (with auto
precharge disabled) using BL = 8 operation might be
interrupted and truncated ONLY by another WRITE burst as
long as the interruption occurs on a 4-bit boundary, due to
the 4n prefetch architecture of DDR2 SDRAM. WRITE burst
BL = 8 operations may not to be interrupted or truncated with
any command except another WRITE command.
WRITE bursts are initiated with a WRITE command, as
shown in Figure 12. DDR2 SDRAM uses WL equal to RL
minus one clock cycle [WL = RL - 1CK = AL + (CL - 1CK)].
The starting column and bank addresses are provided with
the WRITE command, and auto precharge is either enabled
or disabled for that access. If auto precharge is enabled, the
row being accessed is precharged at the completion of the
burst. For the generic WRITE commands used in the
following illustrations, auto precharge is disabled.
During WRITE bursts, the first valid data-in element will be
registered on the first rising edge of DQS following the WRITE
command, and subsequent data elements will be registered
on successive edges of DQS. The LOW state on DQS
between the WRITE command and the first rising edge is
known as the write preamble; the LOW state on DQS
following the last data-in element is known as the write
postamble.
AS4DDR264M65PBG1
Rev. 0.5 06/08
Data for any WRITE burst may be followed by a subsequent
READ command. The number of clock cycles required to
meet tWTR is either 2 or tWTR/tCK, whichever is greater.
Data for any WRITE burst may be followed by a subsequent
PRECHARGE command. tWT starts at the end of the data
burst, regardless of the data mask condition.
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FIGURE 12 - WRITE COMMAND
CK#
CK
CKE
HIGH
CS#
RAS#
CAS#
WE#
CA
ADDRESS
EN AP
A10
DIS AP
BANK ADDRESS
BA
DON’T CARE
Note: CA = column address; BA = bank address; EN AP = enable auto precharge; and
DIS AP = disable auto precharge.
TABLE 4 - WRITE USING CONCURRENT AUTO PRECHARGE
From Command (Bank n )
WRITE with Auto Precharge
AS4DDR264M65PBG1
Rev. 0.5 06/08
Minimum Delay (With Concurrent
Auto Precharge)
(CL-1) + (BL/2) + tWTR
READ OR READ w/ AP
WRITE OR WRITE w/ AP
(BL/2)
PRECHARGE or ACTIVE
1
To Command (Bank m )
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t
CK
CK
t
CK
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PRECHARGE COMMAND
FIGURE 13 – PRECHARGE COMMAND
The PRECHARGE command, illustrated in Figure 13, is used
to deactivate the open row in a particular bank or the open
row in all banks. The bank(s) will be available for a
subsequent row activation a specified time (tRP) after the
PRECHARGE command is issued, except in the case of
concurrent auto precharge, where a READ or WRITE
command to a different bank is allowed as long as it does
not interrupt the data transfer in the current bank and does
not violate any other timing parameters. Once a bank has
been precharged, it is in the idle state and must be activated
prior to any READ or WRITE commands being issued to that
bank. A PRECHARGE command is allowed if there is no
open row in that bank (idle state) or if the previously open
row is already in the process of precharging. However, the
precharge period will be determined by the last PRECHARGE
command issued to the bank.
CK#
CK
CKE
HIGH
CS#
RAS#
CAS#
WE#
PRECHARGE OPERATION
ADDRESS
Input A10 determines whether one or all banks are to be
precharged, and in the case where only one bank is to be
precharged, inputs BA2–BA0 select the bank. Otherwise
BA2–BA0 are treated as “Don’t Care.” When all banks are to
be precharged, inputs BA2–BA0 are treated as “Don’t Care.”
ALL BANKS
A10
ONE BANK
BA2,- BA0
BA
Once a bank has been precharged, it is in the idle state and
must be activated prior to any READ or WRITE commands
DON’T CARE
being issued to that bank. tRPA timing applies when the
PRECHARGE (ALL) command is issued, regardless of the
Note: BA = bank address (if A10 is LOW; otherwise "Don't Care").
number of banks already open or closed. If a single-bank
PRECHARGE command is issued, tRP timing applies.
issued). The differential clock should remain stable and meet
tCKE specifications at least 1 x tCK after entering self refresh
mode. All command and address input signals except CKE are
SELF REFRESH COMMAND
The SELF REFRESH command can be used to retain data “Don’t Care” during self refresh.
in the DDR2 SDRAM, even if the rest of the system is powered
down. When in the self refresh mode, the DDR2 SDRAM
retains data without external clocking. All power supply
inputs (including VREF) must be maintained at valid levels
upon entry/exit and during SELF REFRESH operation.
The SELF REFRESH command is initiated like a REFRESH
command except CKE is LOW. The DLL is automatically
disabled upon entering self refresh and is automatically
enabled upon exiting self refresh (200 clock cycles must
then occur before a READ command can be
The procedure for exiting self refresh requires a sequence of
commands. First, the differential clock must be stable and meet
tCK specifications at least 1 x t CK prior to CKE going back
HIGH. Once CKE is HIGH (tCLE(MIN) has been satisfied with
four clock registrations), the DDR2 SDRAM must have NOP or
DESELECT commands issued for t XSNR because time is
required for the completion of any internal refresh in progress.
A simple algorithm for meeting both refresh and DLL
requirements is to apply NOP or DESELECT commands for
200 clock cycles before applying any other command.
Note: Self refresh not available at military temperature.
AS4DDR264M65PBG1
Rev. 0.5 06/08
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RESET FUNCTION
(CKE LOW Anytime)
If CKE asynchronously drops LOW during any valid operation
(including a READ or WRITE burst), the memory controller
must satisfy the timing parameter tDELAY before turning off
the clocks. Stable clocks must exist at the CK, CK# inputs of
the DRAM before CKE is raised HIGH, at which time the
normal initialization sequence must occur. The DDR2
SDRAM device is now ready for normal operation after the
initialization sequence.
DDR2 SDRAM applications may go into a reset state
anytime during normal operation. If an application enters
a reset condition, CKE is used to ensure the DDR2 SDRAM
device resumes normal operation after reinitializing. All
data will be lost during a reset condition; however, the
DDR2 SDRAM device will continue to operate properly if
the following conditions outlined in this section are
satisfied.
The reset condition defined here assumes all supply
voltages (VDD, VDDQ and VREF) are stable and meet all DC
specifications prior to, during, and after the RESET
operation. All other input pins of the DDR2 SDRAM device
are a “Don’t Care” during RESET with the exception of
CKE.
AS4DDR264M65PBG1
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DC OPERATING CONDITIONS
All Voltages referenced to Vss
MIN
Symbol
Parameter
TYP
MAX
Units
Notes
1.8
1.9
V
1
1.8
1.9
V
4
0.50 x VCCQ
0.51 x VCCQ
V
2
VREF + 0.04
V
3
Supply Voltage
VCC
I/O Supply Voltage
VCCQ
1.7
I/O Reference Voltage
VREF
0.49 x VCCQ
I/O Termination Voltage
VTT
VREF - 0.04
VREF
1.7
1. V CCQ tracks V CC due to direct tie in package.
2. V REF is expected to equal V CCQ /2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on V REF may not
exceed ± 1 percent of the DC value. Peak-to-peak AC noise on V REF may not exceed ± 2 percent of V REF . This measurement is to be taken at the
nearest V REF bypass capacitor.
3. V TT is not applied directly to the device. V TT is a system supply for signal termination resistors, is expected to be set equal to V REF and must track
variations in the DC level of V REF .
4. V CCQ tracks with V CC track with V CC .
ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Max
Unit
VCC
Voltage on VCC pin relative to V SS
-1.0
2.3
V
VCCQ
Voltage on VCCQ pin relative to VSS
-0.5
2.3
V
Symbol
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
TSTG
Storage Temperature
-55.0
125.0
TCASE
Device Operating Temperature
-55.0
125.0
ADDR, BAx
-8
8
uA
RAS\, CAS\, WE\, CS\,
CKE, DM, DQS, DQS\,
RDQS
-5
5
uA
CK, CK\
-5
5
uA
DM
-5
5
uA
II
IOZ
IVREF
Input Leakage current; Any input 0V<VIN<VCC;
V REF =
.5XVCCQ; Other balls not under test = 0V
V
C
o
o
C
OV ” VOUT ” VDDQ, DQ & ODT Disabled
-5
5
uA
VREF Leakage Current
-10
10
uA
INPUT / OUTPUT CAPACITANCE
TA = 25oC, f = 1 MHz, VCC = VCCQ = 1.8V
Parameter
Input capacitance (A0-A12, BA0-BA2, CS\, RAS\, CAS\, WE\, CKE, ODT)
Symbol
CADDR
Max
20
Unit
pF
Input capacitance CK, CK#
CIN2
8
pF
Input capacitance DM, DQS, DQS#
CIN3
10
pF
Input capacitance DQ0-71
COUT
12
pF
AS4DDR264M65PBG1
Rev. 0.5 06/08
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INPUT DC LOGIC LEVEL
All voltages referenced to Vss
Parameter
Input High (Logic 1) Voltage
Symbol
VIH (DC)
Min
VREF + 0.125
Max
VCC + 0.3001
Unit
V
Input Low (Logic 0) Voltage
VIL (DC)
-0.300
VREF - 0.125
V
Note 1: VCCQ = VCC, 300mV is allowed provided Vcc does not exceed 1.9V
INPUT AC LOGIC LEVEL
All voltages referenced to Vss
Parameter
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
Symbol
VIH (AC)
Min
VREF + 0.250
Max
VCC+0.3001
Unit
V
AC Input High (Logic 1) Voltage DDR2-667
VIH (AC)
VREF + 0.200
VCC+0.3001
V
ACInput Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL (AC)
-0.3
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL (AC)
-0.3
VREF - 0.200
V
Note 1: VCCQ = VCC, 300mV is allowed provided Vcc does not exceed 1.9V
AS4DDR264M65PBG1
Rev. 0.5 06/08
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DDRII ICC SPECIFICATIONS AND CONDITIONS
Parameter
Operating Current: One bank active-precharge
tCL=tCK(ICC), tRC=tRC(ICC), tRAS=tRAS MIN(ICC); CKE is
HIGH, CS\ is HIGH between valid commands; Address bus
switching, Data bus switching
Operating Current: One bank active-READ-precharge
current
IOUT=0ma; BL=4, CL=CL(ICC), AL=0; tCK = tCK(ICC), tRCtRC(ICC), tRAS=tRAS MIN(ICC), tRCD=tRCD(ICC); CKE is
HIGH, CS\ is HIGH between valid commands; Address bus is
switching; Data bus is switching
Precharge POWER-DOWN current
All banks idle; tCK-tCK(ICC); CKE is LOW; Other control and
address bus inputs are stable; Data bus inputs are floating
Symbol
667 MHZ
-3
533 MHZ
-38
400 MHZ
-5
Units
ICC0
525
480
440
mA
ICC1
600
520
480
mA
ICC2P
30
30
30
mA
ICC2Q
250
210
160
mA
ICC2N
270
230
180
mA
125
105
95
40
40
40
ICC3N
240
200
165
mA
ICC4W
685
565
485
mA
ICC4R
685
565
485
mA
ICC5
1000
880
800
mA
ICC6
30
30
30
mA
ICC7
1370
1280
1220
mA
Precharge quiet STANDBY current
All banks idle; tCK=tCK(ICC); CKE is HIGH, CS\ is HIGH;
Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge STANDBY current
All banks idle; tCK-=tCK(ICC); CKE is HIGH, CS\ is HIGH;
Other control and address bus inputs are switching; Data bus
inputs are switching
Active POWER-DOWN current
MRS[12]=0
All banks open; tCK=tCK(ICC); CKE is LOW;
Other control and address inputs are stable; Data
bus inputs are floating
ICC3P
mA
MRS[12]=1
Active STANDBY current
All banks open; tCK=tCK(ICC), tRAS MAX(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are
switching; Data bus inputs are switching
Operating Burst WRITE current
All banks open, continuous burst writes; BL=4, CL=CL(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH betwwn valid
commands; Address bus inputs are switching; Data bus
Operating Burst READ current
All banks open, continuous burst READS, Iout=0mA; BL=4,
CL=CL(ICC), AL=0; tCL=tCK(ICC), tRAS=tRAS MAX(ICC),
tRP=tRP(ICC); CKE is HIGH, CS\ is HIGH betwwn valid
commands; Address and Data bus inputs switching
Burst REFRESH current
tCK=tCK(ICC); refresh command at every iRFC(ICC) interval;
CKE is HIGH, CS\ is HIGH Between valid commands;
Address bus inputs are switching; Data bus inputs are
switching
Self REFRESH current
CK and CK\ at 0V; CKE </=0.2V; Other contro, address and
data inputs are floating
Operating bank Interleave READ current:
All bank interleaving READS, IOUT = 0mA; BL=4,
CL=CL(ICC), AL=tRCD(ICC)-1xtCK(ICC); tCK=tCK(ICC),
tRC=tRC(ICC), tRRD=tRRD(ICC); CKE is HIGH, CS\ is HIGH
between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
AS4DDR264M65PBG1
Rev. 0.5 06/08
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AC OPERATING SPECIFICATIONS
Parameter
Clock Cycle Time
CL=5
Symbol
tCKAVG
CL=4
tCKAVG
CL=3
Clock High Time
Clock Low Time
Half Clock Period
Clock Jitter - Period
Min of
Clock Jitter - Half Period
Clock Jitter - Cycle to Cycle
-3
333MHz/667Mbps
MIN
MAX
3
8
3.75
8
-38
266MHz/533Mbps
MIN
MAX
-5
200MHz/400Mbps
MIN
MAX
Units
ns
3.75
8
5
8
ns
tCKAVG
5
8
5
8
5
8
ns
tCHAVG
0.48
0.52
0.48
0.52
0.48
0.52
tCK
tCLAVG
tHP
tJIT PER
0.48
0.52
0.48
0.52
0.48
0.52
tCH,tCL
-125
125
-125
125
-125
125
tCK
ps
ps
tJIT DUTY
-125
125
-125
125
-150
150
ps
tJIT CC
tCH,tCL
250
tCH,tCL
250
ps
250
tERR2PER
-175
175
-175
175
-175
175
ps
Cumulative Jitter error, 4 Cycles
tERR4PER
-250
250
-250
250
-250
250
ps
Cumulative Jitter error, 6-10 Cycles
tERR10PER
-350
350
-350
350
-350
350
ps
Cumulative Jitter error, 11-50 Cycles
DQ hold skew factor
DQ output access time from CK/CK\
Data-out High-Z window from CK/CK\
DQS Low-Z window from CL/CK\
tERR50PER
tQHS
tAC
tHZ
tLZ1
-450
-450
450
340
450
-450
-500
450
400
500
-450
-600
450
450
600
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
tAC(MIN)
tAC(MAX)
ps
ps
ps
ps
ps
tAC(MAX)
2*tAC(MIN)
tAC(MAX)
2*tAC(MIN)
tAC(MAX)
Cumulative Jitter error, 2 Cycles
tAC(MAX)
tAC(MAX)
tAC(MAX)
tLZ2
2*tAC(MIN)
DQ and DM input setup time relative to DQS
tDSJEDEC
100
100
150
ps
DQ and DM input hold time relative to DQS
DQ and DM input pulse width (for each input)
Data Hold skew factor
DQ-DQS Hold, DQS to first DQ to go non valid, per access
Data valid output window (DVW)
DQS input-high pulse width
DQS input-low pulse width
DQS output access time from CK/CK\
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising-hold time
DQS-DQ skew, DQS to last DQ valid, per group, per access
DQS READ preamble
DQS READ postamble
WRITE preamble setup time
DQS WRITE preamble
DQS WRITE postamble
Positive DQS latching edge to associated Clock edge
WRITE command to first DQS latching transition
tDHJEDEC
tDIPW
tQHS
tQH
tDVW
tDQSH
tDQSL
tDQSCK
tDSS
tDSH
tDQSQ
tRPRE
tRPST
tWPRES
tWPRE
tWPST
tDQSS
175
0.35
225
0.35
275
0.35
ps
tCK
ps
ps
ps
tCK
tCK
ps
tCK
tCK
ps
tCK
tCK
ps
tCK
tCK
tCK
tCK
DQ Low-Z window from CK/CK\
AS4DDR264M65PBG1
Rev. 0.5 06/08
340
400
450
tHP-tQHS
tHP-tQHS
tHP-tQHS
tQH-tDQSQ
tQH-tDQSQ
tQH-tDQSQ
0.35
0.35
-400
0.2
0.2
0.35
0.35
-400
0.2
0.2
0.35
0.35
-450
0.2
0.2
0.9
0.4
0
0.35
0.4
-0.25
400
240
1.1
0.6
0.6
0.25
0.9
0.4
0
0.35
0.4
-0.25
400
300
1.1
0.6
0.6
0.25
0.9
0.4
0
0.35
0.4
-0.25
450
350
1.1
0.6
0.6
0.25
WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS WL-tDQSS WL+tDQSS
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AC OPERATING SPECIFICATIONS (CONTINUED)
Parameter
Address and Control input puslse width for each input
PWRDN
ODT
S. REFRESH
REFRESH
COMMAND and ADDRESS
Address and Control input setup time
Symbol
tIPW
tISJEDEC
-3
333MHz/667Mbps
MIN
MAX
0.6
250
350
ps
375
2
55
10
15
50
40
7.5
15
475
2
55
10
15
50
40
7.5
15
ps
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
ns
tREFIIT
7.8
Average periodic REFRESH interval [Enhanced temp]
tREFIET
Average periodic REFRESH interval [Extended temp]
Exit SELF REFRESH to non READ command
tREFIXT
Exit SELF REFRESH timing reference
Units
tCK
275
2
55
10
15
50
40
7.5
15
tIHJEDEC
tCCD
tRC
tRRD
tRCD
tFAW
tRAS
tRTP
tWR
tDAL
tWTR
tRP
tRPA
tMRD
tDELAY
Exit SELF REFRESH to READ command
-5
200MHz/400Mbps
MIN
MAX
0.6
200
Address and Control input hold time
CAS\ to CAS\ command delay
ACTIVE to ACTIVE command (same bank)
ACTIVE bank a to ACTIVE bank b Command
ACTIVE to READ or WRITE delay
4-Bank activate period
ACTIVE to PRECHARGE
Internal READ to PRECHARGE command delay
WRITE recovery time
Auto PRECHARGE WRITE recovery+PRECHARGE time
Internal WRITE to READ command delay
PRECHARGE command period
PRECHARGE ALL command period
LOAD MODE, command Cycle time
CKE LOW to CK, CK\ uncertainty
REFRESH to ACTIVE or REFRESH to REFRESH
command Interval
Average periodic REFRESH interval [Industrial temp]
tRFC
-38
266MHz/533Mbps
MIN
MAX
0.6
700001
700001
700001
tWR + tRP
tWR + tRP
tWR + tRP
7.5
15
7.5
15
10
15
tRP+tCL
tRP+tCL
tRP+tCL
2
2
2
tIS + tCL + tIH
127
70000 1
tIS + tCL + tIH
tIS + tCL + tIH
70000 1
ns
7.8
7.8
us
5.9
5.9
5.9
us
3.9
3.9
3.9
us
127
70000 1
127
tXSNR
tRFC(min)+
10
tRFC(min)+
10
tRFC(min)+
10
ns
tXSRD
200
200
200
tCK
tISXR
tIS
ODT turn-on delay
tAOND
2
2
tIS
2
2
2
2
ODT turn-on delay
tAOND
tAC(min)
tAC(max)+
700
tAC(min)
tAC(max)+
1000
tAC(min)
tAC(max)+
1000
ps
ODT turn-off delay
tAOPD
2.5
2.5
2.5
2.5
2.5
2.5
tCK
ODT turn-off delay
tAOF
tAC(min)
tAC(max)+
600
tAC(min)
tAC(max)+
600
tAC(min)
tAC(max)+
600
ps
2 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2 x tCK +
tAC(max)+
1000
ps
2.5 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2.5 x tCK +
tAC(max)+
1000
tAC(min) +
2000
2.5 x tCK +
tAC(max)+
1000
ps
ODT turn-on (power-down mode)
tAONPD
tAC(min) +
2000
ODT turn-off (power-down mode)
tAOFPD
tAC(min) +
2000
ODT to power-down entry latency
ODT power-down exit latency
ODT enable from MRS command
Exit active POWER-DOWN to READ command, MR[12]=0
Exit active POWER-DOWN to READ command, MR[12]=1
Exit PRECHARGE POWER-DOWN to any non READ
CKE Min. HIGH/LOW time
tANPD
tAXPD
tMOD
tXARD
tSARDS
tXP
tCLE
tIS
3
8
12
2
3
8
12
2
3
8
12
2
7 - AL
6 - AL
6 - AL
2
3
2
3
2
3
ps
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
Note 1: Max value reduced to 10,000ns at 125oC
AS4DDR264M65PBG1
Rev. 0.5 06/08
Austin Semiconductor, Inc.
25
●
Austin, Texas
●
512.339.1188
●
www.austinsemiconductor.com
i PEM
4.2 G
b SDRAM-DDR2
Gb
Austin Semiconductor, Inc. AS4DDR264M65PBG1
MECHANICAL DIAGRAM
208 x Ø 0.60 (0.024) NOM
11 10 9
8
7
6
5
4
3
2
1
A
B
C
D
E
F
H
J
K
L
2.
M
1.0 (0.039) NOM
18.0 (0.709) NOM
24.15 (0.951) MAX
G
N
P
R
T
U
V
W
1.0 (0.039)NOM
0.50
(0.020)
NOM
10.0 (0.394) NOM
2.00 (0.079) MAX
16.15 (0.636) MAX
AS4DDR264M65PBG1
Rev. 0.5 06/08
Austin Semiconductor, Inc.
26
●
Austin, Texas
●
512.339.1188
●
www.austinsemiconductor.com
i PEM
4.2 G
b SDRAM-DDR2
Gb
Austin Semiconductor, Inc. AS4DDR264M65PBG1
ORDERING INFORMATION
Part Number
Core Freqency
Data Rate
Device Grade
Availability
AS4DDR264M65PBG1-3/IT
333MHz
667Mbps
Industrial
Consult Factory
AS4DDR264M65PBG1-38/IT
266MHz
533Mbps
Industrial
Consult Factory
AS4DDR264M65PBG1-5/IT
200MHZ
400Mbps
Industrial
Consult Factory
AS4DDR264M65PBG1-3/ET
333MHz
667Mbps
Enhanced
Consult Factory
AS4DDR264M65PBG1-38/ET
266MHz
533Mbps
Enhanced
Consult Factory
AS4DDR264M65PBG1-5/ET
200MHZ
400Mbps
Enhanced
Consult Factory
AS4DDR264M65PBG1-3/XT
333MHz
667Mbps
Extended (Mil-Temp)
Consult Factory
AS4DDR264M65PBG1-38/XT
266MHz
533Mbps
Extended (Mil-Temp)
Consult Factory
AS4DDR264M65PBG1-5/XT
200MHZ
400Mbps
Extended (Mil-Temp)
Consult Factory
AS4DDR264M65PBG1R-3/IT
333MHz
667Mbps
Industrial - RoHS
Consult Factory
AS4DDR264M65PBG1R-38/IT
266MHz
533Mbps
Industrial - RoHS
Consult Factory
AS4DDR264M65PBG1R-5/IT
200MHZ
400Mbps
Industrial - RoHS
Consult Factory
AS4DDR264M65PBG1R-3/ET
333MHz
667Mbps
Enhanced - RoHS
Consult Factory
AS4DDR264M65PBG1R-38/ET
266MHz
533Mbps
Enhanced - RoHS
Consult Factory
AS4DDR264M65PBG1R-5/ET
200MHZ
400Mbps
Enhanced - RoHS
Consult Factory
AS4DDR264M65PBG1R-3/XT
333MHz
667Mbps
Extended - RoHS
Consult Factory
AS4DDR264M65PBG1R-38/XT
266MHz
533Mbps
Extended - RoHS
Consult Factory
AS4DDR264M65PBG1R-5/XT
200MHZ
400Mbps
Extended - RoHS
Consult Factory
IT = Industrial = Industrial class integrated component, fully operable across -40C to +85C
ET = Enhanced = Enhanced class integrated component, fully operable across -40C to +105C
XT = Extended = Mil-Temperature class integrated component, fully operable across -55C to +125C
AS4DDR264M65PBG1
Rev. 0.5 06/08
Austin Semiconductor, Inc.
27
●
Austin, Texas
●
512.339.1188
●
www.austinsemiconductor.com
i PEM
4.2 G
b SDRAM-DDR2
Gb
Austin Semiconductor, Inc. AS4DDR264M65PBG1
DOCUMENT TITLE
4.2Gb, 64M x 64, DDR2 SDRAM, 16mm x 23mm - 208 PBGA Multi-Chip Package [iPEM]
REVISION HISTORY
Rev #
0.0
0.5
AS4DDR264M65PBG1
Rev. 0.5 06/08
History
Initial Release
Updated Pinout & Pin Desc
Release Date
May 2008
June 2008
Austin Semiconductor, Inc.
28
●
Austin, Texas
Status
Advance
Advance
●
512.339.1188
●
www.austinsemiconductor.com
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