Austin AS8S512K32PEC-25/IT 16mb, 512kx32 cmos 5.0v, high speed static ram integrated plastic encapsulated microcircuit Datasheet

i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM
Integrated Plastic Encapsulated Microcircuit
FEATURES
DESCRIPTION
„
The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The
device is available with access times of 12, 15, 20 and
25ns creating a zero wait state/latency, real-time memory
solution. The high speed, 5v supply voltage and control
lines,make the device ideal for all your real-time computer
memory requirements.
„
„
Integrated Real-Time Memory Array Solution
„
No latency or refresh fycles
„
Parallel Read/Write Interface
„
User Configurable via multiple enables
Random Access Memory Array
„
Fast Access Times: 12, 15, 20, and 25ns
„
TTL Compatible I/O
„
Fully Static, No Clocks
Surface Mount Package
„
68 Lead PLCC, No. 99 JEDEC M0-47AE
„
Small Footprint, 0.990 Sq. In.
„
Multiple Ground Pins for Maximum Noise Immunity
„
Single +5V (±5%) Supply Operation
The device can be configured as a 512K x 32 and used to
create a single chip external data /program memory array
solution or via use of the individual chip enable lines, be
reconfigured as a 1M x 16 or 2M x 8.
The device provides a 50+% space savings when
compared to four 512K x 8, 36 pin SOJs. In addition the
AS8S512K32 has only a 20pF load on the Addr. lines vs.
~30pF for four plastic SOJs.
DQ15
A14
A15
A16
W\
G\
NC
NC
Vcc
NC
E0\
E1\
E2\
E3\
A17
A18
PIN NAMES
A0 - A18
E0\ - E3\
W\
G\
DQ0 - DQ31
Vcc
Vss
NC
61
62
63
64
65
66
67
68
1
2
3
4
5
6
7
8
9
DQ16
PIN CONFIGURATIONS AND BLOCK DIAGRAM
DQ17
10
60
DQ14
DQ18
11
59
DQ13
DQ19
12
58
DQ12
Vss
13
57
Vss
Address Inputs
Chip Enables
Write Enables
Output Enable
Common Data Input/Output
Power (+5V ± 10%)
Ground
No Connection
BYTE CONTROL TABLE
Chip
Byte
Enable
Control
E0\
DQ0-7
E1\
DQ8-15
E2\
DQ16-23
E3\
DQ24-31
DQ29
25
45
DQ02
E2\
DQ8-DQ15
DQ30
26
44
DQ01
E3\
DQ16-DQ23
43
E1\
DQ00
DQ03
42
46
A07
24
41
E0\
DQ28
A08
Vss
40
DQ04
47
A09
48
23
39
22
Vss
A10
DQ27
38
W\
A11
DQ05
37
DQ06
49
A12
50
21
36
20
DQ26
A13
DQ25
35
DQ07
Vcc
51
34
19
A0
DQ24
33
Vcc
A1
52
32
18
A2
DQ08
Vcc
31
53
A3
17
30
DQ09
DQ23
A4
54
29
16
A5
DQ10
DQ22
28
DQ11
55
27
56
15
A6
14
DQ31
DQ20
DQ21
AS8S512K32PEC
Rev. 0.1 01/09
A0-A18
G\
19
512K x 32
Memory Array
DQ0-DQ7
DQ24-DQ31
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to Vss
Operating Temperature tA (Ambient)
Commercial
Industrial
Storage Temperature, Plastic
Power Dissipation
Output Current
Junction Temperature, TJ
-0.5V to 7.0V
0oC to +70oC
-40oC to +85oC
-55oC to +125oC
5.0 Watts
20 mA
175oC
*Stress greater than those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions greater than those in di cated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Sym
Min
Typ
VCC
Supply Voltage
4.75
5
VSS
Supply Voltage
0
0
Max
5.25
Units
V
0
V
Input High Voltage
VIH
2.2
---
Vcc+0.5V
V
Input Low Voltage
VIL
-0.3
---
0.8
V
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Vss to 3.0V
5ns
1.5V
Figure 2
Note: For tEHQZ, tGHQZ and tWLQZ, CL=5pF
FIG. 2
FIG. 3
Vcc
Vcc
480Ω
480Ω
Q
Q
30pF
255Ω
5pF
255Ω
DC ELECTRICAL CHARACTERISTICS
Parameter
Sym
Conditions
Min
Max
20/25
300
Units
ns
mA
Operating Power Supply Current
ICC1
W#=VIL, II/O=0mA, Min Cycle
12/15
350
Standby (TTL) Power Supply Current
ICC2
E#•VIH, VIN”VIL or VIN•VIH, f=0MHz
120
125
mA
20
20
mA
Full Standby Power Supply Current
CMOS
ICC3
E#•VCC-0.2V
VIN•VCC-0.2V or VIN”0.2V
Input Leakage Current
ILI
VIN=0V to VCC
±5
μA
Output Leakage Current
ILO
VI/O=0V to VCC
±5
μA
Ouput High Voltage
VOH
IOH=-4.0mA
Output Low Voltage
VOL
IOL=8.0mA
TRUTH TABLE
G# E# W#
Mode
Output
H
X
Standby
HIGH Z
H
L
H
Output Deselect
ICC1
ICC1
L
L
H
Read
HIGH Z
DOUT
X
L
L
Write
DIN
AS8S512K32PEC
Rev. 0.1 01/09
CAPACITANCE
(f=1.0MHz, VIN=VCC or VSS)
Sym
Parameter
Address Lines
CI
Data Lines
CD/Q
Write & Output Enable Line W#, G#
Chip Enable Line
E0#, E3#
Power
ICC2
X
2.4
ICC3
ICC1
V
0.4
V
Max
20
7
20
7
Unit
pF
pF
pF
pF
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
AC CHARACTERISTICS READ CYCLE
Symbol
JEDEC
Alt.
tAVAV
tRC
Parameter
Read Cycle Time
12ns
Min
Max
12
15ns
Min
Max
15
20ns
Min
Max
20
25ns
Min
Max
25
Units
ns
Address Access Time
tAVQV
tAA
12
15
20
25
ns
Chip Enable Access
tELQV
tACS
12
15
20
25
ns
Chip Enable to Output in Low Z
tELQX
tCLZ
Chip Disable to Output in High Z
tEHQZ
tCHZ
9
ns
Output Hold from Address Change
tAVQX
tOH
Output Enable to Output Valid
tGLQV
tOE
Output Enable to Output in Low Z
tGLQX
tOLZ
Output Enable to Output in High Z
tGHQZ
tOHZ
3
3
6
3
3
7
9
3
6
0
3
7
0
7
ns
3
9
0
6
3
ns
9
ns
9
ns
0
9
ns
READ CYCLE 1 - W\ HIGH, G\, E\ LOW
tAVAV
A
ADDRESS 1
ADDRESS 2
tAVQV
tAVQX
Q
DATA 1
DATA 2
READ CYCLE 2 - W\ HIGH
tAVAV
A
tAVQV
E#
tELQV
tEHQZ
tELQX
G#
tGLQV
t GHQZ
tGLQX
Q
AS8S512K32PEC
Rev. 0.1 01/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
AC CHARACTERISTICS READ CYCLE
Symbol
Alt.
JEDEC
tAVAV
tWC
Parameter
Write Cycle Time
12ns
Min
Max
12
15ns
Min
Max
15
20ns
Min
Max
20
25ns
Min
Max
25
Units
ns
tELWH
tCW
8
10
11
12
ns
tELEH
tCW
8
10
11
12
ns
tAVWL
tAS
0
0
0
0
ns
tAVEL
tAS
0
0
0
0
ns
tAVWH
tAW
8
10
11
12
ns
tAVEH
tAW
8
10
11
12
ns
tWLWH
tWP
8
10
11
12
ns
tELEH
tWP
10
12
13
14
tWHAZ
tWR
0
0
0
0
tEHAZ
tWR
0
0
0
0
tWHDX
tDH
0
0
0
0
tEHDZ
tDH
0
0
0
0
Write to Output in High Z
tWLQZ
tWHZ
0
Data to Write Time
tDVWH
tDW
6
7
8
9
tDVEH
tDW
6
7
8
9
tWHQX
tWLZ
3
3
3
3
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Output Active from End of Write
6
0
7
0
8
0
ns
ns
9
ns
ns
WRITE CYCLE 1 - W\ CONTROLLED
tAVAV
A
E\
tELWH
tWHAX
tAVWH
tWLWH
W\
tAVWL
tDVWH
D
DATA VALID
tWHQX
tWLQZ
HIGH Z
Q
AS8S512K32PEC
Rev. 0.1 01/09
tWHDX
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
WRITE CYCLE 2 - E\ CONTROLLED
tAVAV
A
tAVEL
tELEH
E\
tAVEH
tEHAX
tWLEH
W\
tDVEH
D
tEHDX
DATA VALID
HIGH Z
Q
PACKAGE DRAWING
Package No. 99
68 Lead PLCC
JEDEC MO-47AE
0.995
Max
0.956
Max
0.180
Max
0.995 0.956
Max Max
0.040
Max
AS8S512K32PEC
Rev. 0.1 01/09
0.020
0.015
0.930
0.890
0.050
BSC
0.115
Max
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
ORDERING INFORMATION
Part Number
Access Speed
Device Grade
AS8S512K32PEC-MS
NA
Mechanical Sample
AS8S512K32PEC-ES
NA
Engineering Sample
AS8S512K32PEC-12/IT
12ns
INDUSTRIAL
AS8S512K32PEC-15/IT
15ns
INDUSTRIAL
AS8S512K32PEC-20/IT
20ns
INDUSTRIAL
AS8S512K32PEC-25/IT
25ns
INDUSTRIAL
AS8S512K32PEC-12/ET
12ns
ENHANCED
AS8S512K32PEC-15/ET
15ns
ENHANCED
AS8S512K32PEC-20/ET
20ns
ENHANCED
AS8S512K32PEC-25/ET
25ns
ENHANCED
AS8S512K32PEC-12/XT
12ns
MIL-TEMP
AS8S512K32PEC-15/XT
15ns
MIL-TEMP
AS8S512K32PEC-20/XT
20ns
MIL-TEMP
AS8S512K32PEC-25/XT
25ns
MIL-TEMP
Availability
SEPTEMBER 2006
OCTOBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
CF
NOVEMBER 2006
NOVEMBER 2006
NOVEMBER 2006
AS8S512K32PEC
Rev. 0.1 01/09
A20
Vcc
NC
G\
W\
A16
A15
A14
DQ15
NC
Vcc
NC
NC
G\
W\
A16
A15
A14
DQ15
NC
Vcc
NC
NC
G\
W\
A16
A15
A14
DQ15
2
1
68
67
66
65
64
63
62
61
A19
E0\
E0\
E0\
3
E1\
E1\
E1\
4
E2\
E2\
E2\
5
E3\
E3\
E3\
6
A17
A17
NC
7
A18
A18
DQ16
DQ16
NC
4Mb-SRAM, 128K x 32:
5.0V = AS8S128K32PEC
DQ16
16Mb-SRAM, 512K x 32:
5.0V = AS8S512K32PEC
3.3V = AS8SLC512K32PEC
8
64Mb-SRAM, 2M x 32:
3.3V = AS8SLC2M32PEC
9
FAMILY PIN MATRIX
DQ17
DQ17
DQ17
10
60
DQ14
DQ14
DQ14
DQ18
DQ18
DQ18
11
59
DQ13
DQ13
DQ13
DQ19
DQ19
DQ19
12
58
DQ12
DQ12
DQ12
Vss
Vss
Vss
13
57
Vss
Vss
Vss
DQ20
DQ20
DQ20
14
56
DQ11
DQ11
DQ11
DQ21
DQ21
DQ21
15
55
DQ10
DQ10
DQ10
DQ22
DQ22
DQ22
16
54
DQ09
DQ09
DQ09
DQ23
DQ23
DQ23
17
53
DQ08
DQ08
DQ08
Vcc
Vcc
Vcc
18
52
Vcc
Vcc
Vcc
DQ24
DQ24
DQ24
19
51
DQ07
DQ07
DQ07
DQ25
DQ25
DQ25
20
50
DQ06
DQ06
DQ06
DQ26
DQ26
DQ26
21
49
DQ05
DQ05
DQ05
DQ27
DQ27
DQ27
22
48
DQ04
DQ04
DQ04
Vss
Vss
Vss
23
47
Vss
Vss
Vss
DQ28
DQ28
DQ28
24
46
DQ03
DQ03
DQ03
DQ29
DQ29
DQ29
25
45
DQ02
DQ02
DQ02
DQ30
DQ30
DQ30
26
44
DQ01
DQ01
DQ01
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
DQ31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A09
A08
A07
DQ00
DQ31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A09
A08
A07
DQ00
DQ31
A6
A5
A4
A3
A2
A1
A0
Vcc
A13
A12
A11
A10
A09
A08
A07
DQ00
AUSTIN SEMICONDUCTOR
68 - LD. PLCC
[JEDEC MO-47AE]
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
i PEM
16 MB ASYNC SRAM
Austin Semiconductor, Inc.
AS8S512K32PEC
DOCUMENT TITLE
16Mb, 512K x 32, SRAM, 5.0V, 0.990”sq. - 68 LD. PLCC, Multi-Chip Package [iPEM]
REVISION HISTORY
Rev #
0.0
0.1
AS8S512K32PEC
Rev. 0.1 01/09
History
Initial Release
Updated Order Chart
Release Date
September 2005
January 2009
Status
Advance
Advance
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
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