ASI ASI1001 Npn silicon rf power transistor Datasheet

ASI1001
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG
The ASI 1001 is Designed for General
Purpose Class C Power Amplifier
Applications up to 1500 MHz.
A
ØD
B
.060 x 45°
CHAMFER
C
E
FEATURES:
G
• PG = 12 dB min.at 1.0 W / 1,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System
L
200 mA
VCC
35 V
MINIMUM
inches / mm
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
D
.128 / 3.25
7.0 W @ TC = 25 C
-65 OC to +200 OC
TSTG
-65 OC to +200 OC
θ JC
45 OC/W
CHARACTERISTICS
SYMBOL
.255 / 6.48
.132 / 3.35
.110 / 2.79
.117 / 2.97
.117 / 2.97
G
O
MAXIMUM
.125 / 3.18
E
TJ
I
K
DIM
F
PDISS
J
P
MN
MAXIMUM RATINGS
IC
F
H
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
ORDER CODE: ASI10522
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICBO
VE = 28 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
ηC
VCC = 28 V
MINIMUM TYPICAL MAXIMUM
RBE = 10 Ω
IC = 100 mA
45
V
45
V
3.5
V
15
f = 1.0 MHz
POUT = 1.0 W
f = 1.0 GHz
UNITS
12
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.5
mA
120
---
3.2
pF
dB
%
REV. A
1/1
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