ASI ASI10467 Npn silicon rf power transistor Datasheet

MRF427
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF427 is Designed for
high voltage applications up to 30 MHz
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
• PG = 18 dB min. at 25 W/30 MHz
• IMD3 = -34 dBc max. at 25 W (PEP)
• Omnigold™ Metalization System
C
E
FULL R
C
B
B
E
H
E
D
G
F
I J
MAXIMUM RATINGS
6.0 A
IC
110 V
VCBO
VCEO
65 V
VEBO
4.0 V
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
80 W @ TC = 25 °C
TJ
-65 C to +200 °C
O
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
-65 C to +150 °C
θJC
2.19 °C/W
CHARACTERISTICS
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
O
TSTG
MAXIMUM
.125 / 3.18
B
PDISS
K
DIM
E
L
ORDER CODE: ASI10467
°
TC = 25 C
NONETEST CONDITIONS
SYMBOL
Ø.125 NOM.
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 100 mA
110
V
BVCES
IC = 100 mA
110
V
BVCEO
IC = 200 mA
65
V
BVEBO
IE = 10 mA
4.0
V
hFE
VCE = 5.0 V
Cob
VCB = 50 V
GP
IMD3
VCE = 50 V
IC = 500 mA
15
f = 1.0 MHz
18
POUT = 25 W (PEP)
f = 30 MHz
---
60
pF
-34
dB
dBc
20
- 37
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
90
REV. A
1/1
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