ASI ASI10514 Npn silicon rf power transistor Datasheet

ALR100
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG
L
DESCRIPTION:
N
J
O
A
The ASI ALR100 is Designed for
B
E
K
D
FEATURES:
C
.062 x 45°
M
G
• Input Matching Network
•
• Omnigold™ Metalization System
F
P
I
H
Q
R
.140 / 3.56
.110 / 2.80
.110 / 2.80
C
.407 / 10.34
.395 / 10.03
D
.193 / 4.90
E
13.5 A
inches / mm
inches / mm
B
MAXIMUM RATINGS
MAXIMUM
MINIMUM
DIM
A
IC
Ø .120
.230 / 5.84
F
G
.003 / 0.08
.006 / 0.15
H
.118 / 3.00
.131 / 3.33
VCC
32 V
I
.063 / 1.60
J
.650 / 16.51
270 W @ TC = 25 OC
K
.386 / 9.80
PDISS
L
.900 / 22.86
O
TJ
-65 C to +250 C
TSTG
-65 OC to +200 OC
θ JC
0.55 OC/W
CHARACTERISTICS
SYMBOL
.450 / 11.43
M
.125 / 3.18
N
O
.050 / 1.27
O
P
.405 / 10.29
Q
.170 / 4.32
R
.062 / 1.58
ORDER CODE: ASI10514
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCES
IC = 100 mA
65
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 32 V
hFE
VCE = 5.0 V
IC = 5.0 A
VCC = 28 V
GHz
POUT = 100 W
PG
ηC
15
f = 1.2 to 1.4
20
mA
---
---
6.0
dB
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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