ASI ASI10531 Npn silicon rf power transistor Datasheet

ASI2223-4
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
DESCRIPTION:
A
.025 x 45°
4x .062 x 45°
2X B
The ASI 2223-4 is Designed for
ØD
C
E
F
FEATURES:
G
H
• Input Matching Network
•
• Omnigold™ Metalization System
L
0.75 A
VCC
26 V
PDISS
15.9 W @ TC = 25 OC
M
O
-65 C to +200 C
TJ
O
O
TSTG
-65 C to +200 C
θ JC
O
MINIMUM
MAXIMUM
inches / mm
inches / mm
A
.020 / 0.51
.030 / 0.76
B
.100 / 2.54
C
.376 / 9.55
D
.110 / 2.79
.130 / 3.30
E
.395 / 10.03
.407 / 10.34
CHARACTERISTICS
SYMBOL
F
.193 / 4.90
G
.450 / 11.43
.125 / 3.18
.640 / 16.26
.660 / 16.76
J
.890 / 22.61
.910 / 23.11
K
.395 / 10.03
.415 / 10.54
L
.004 / 0.10
.007 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10531
O
NONETEST CONDITIONS
IC = 5.0 mA
BVCER
IC = 10 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 22 V
hFE
VCE = 5.0 V
ηC
I
TC = 25 C
BVCBO
PG
.396 / 10.06
P
11.0 C/W
N
DIM
H
O
K
P
MAXIMUM RATINGS
IC
I
J
VCC = 22 V
RBE = 10 Ω
IC = 500 mA
POUT = 4.0 W
MINIMUM TYPICAL MAXIMUM
V
40
V
3.5
V
10
f = 2.2 – 2.3 GHz
UNITS
40
1.0
mA
100
---
8.0
dB
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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