AJT030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L N DESCRIPTION: J O A B E The ASI AJT030 is Designed for K D C .062 x 45° M FEATURES: G F • Input Matching Network • • Omnigold™ Metalization System Q R DIM MAXIMUM RATINGS .140 / 3.56 B .110 / 2.80 .110 / 2.80 .407 / 10.34 .395 / 10.03 .193 / 4.90 .230 / 5.84 F 3.5 A VCC 40 V PDISS 75 W @ TC ≤ 85 C O O -65 OC to +200 OC θ JC 2.2 OC/W CHARACTERISTICS .003 / 0.08 .006 / 0.15 H .118 / 3.00 .131 / 3.33 I .063 / 1.60 J .650 / 16.51 K .386 / 9.80 L .900 / 22.86 .450 / 11.43 .125 / 3.18 N O TSTG G M .050 / 1.27 O -65 C to +250 C P .405 / 10.29 Q .170 / 4.32 R .062 / 1.58 ORDER CODE: ASI10546 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 10 mA BVCER IC = 20 mA BVEBO IE = 1.0 mA ICES VCE = 35 V hFE VCE = 5.0 V ηC inches / mm inches / mm A E IC PG MAXIMUM MINIMUM D SYMBOL I H C TJ Ø .120 P VCC = 50 V RBE = 10 Ω IC = 1.0 A POUT = 30 W MINIMUM TYPICAL MAXIMUM 55 V 55 V 3.5 V 15 f = 960 - 1215 MHz UNITS 5.0 mA 150 --- 7.8 dB 40 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1