ASI ASI10555 Npn silicon rf power transistor Datasheet

AVD004P
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L PILL(A)
DESCRIPTION:
A
.100x45°
The ASI AVD004P is Designed for
C
FEATURES:
B
•
•
• Omnigold™ Metalization System
ØG
D
MAXIMUM RATINGS
E
IC
650 mA PEAK
VCB
32 V
PDISS
18 W
PEAK
-65 OC to +200 OC
TJ
TSTG
-65 OC to +150 OC
θ JC
5.0 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.195 / 4.95
.205 / 5.21
C
1.000 / 25.40
D
.004 / 0.10
.007 / 0.18
E
.050 / 1.27
.065 / 1.65
.145 / 3.68
.275 / 6.99
G
.285 / 7.21
ORDER CODE: ASI10555
O
IC = 1 mA
BVCER
IC = 5 mA
BVEBO
IE = 1 mA
ICES
VCE = 28 V
hFE
VCE = 5.0 V
ηC
inches / mm
F
NONETEST CONDITIONS
VCC = 28 V
MHz
MINIMUM
TC = 25 C
BVCBO
PG
DIM
F
RBE = 10 Ω
IC = 200 mA
POUT = 4.0 W
MINIMUM TYPICAL MAXIMUM
45
V
45
V
3.5
V
30
f = 1025 - 1150
UNITS
1.0
mA
300
---
9.0
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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