AVD035F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG (B) A .100 X 45° DESCRIPTION: ØD The ASI AVD035F is Designed for .088 x 45° CHAMFER C B FEATURES: E F • • • Omnigold™ Metalization System G H I MAXIMUM RATINGS 2.5 A PEAK IC 55 V VCB 100 W PEAK -65 OC to +200 OC TJ O MAXIMUM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .255 / 6.48 .285 / 7.24 H .003 / 0.08 .007 / 0.18 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K O TSTG -65 C to +150 C θ JC 1.0 OC/W CHARACTERISTICS SYMBOL K DIM G PDISS J ORDER CODE: ASI10558 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V MHz RBE = 10 Ω IC = 500 mA POUT = 35 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1025 - 1150 UNITS 10 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --dB % REV. A 1/1