ASI ASI10613 Npn silicon rf power transistor Datasheet

HF150-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L STUD (A)
The ASI HF150-50S is Designed for
.112 x 45°
FEATURES:
A
Ø .630 NOM
C
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W (PEP)
• Omnigold™ Metalization System
B C
E
E
B
D
E
G
MAXIMUM RATINGS
1/4-28 UNF-2A
F
H
IC
10 A
VCBO
110 V
VEBO
4.0 V
DIM
MINIMUM
inches / mm
inches / mm
55 V
A
.220 / 5.59
.230 / 5.84
VCEO
PDISS
233 W @ TC = 25 C
TJ
-65 OC to +200 OC
T STG
-65 OC to +150 OC
θ JC
0.75 OC/W
CHARACTERISTICS
SYMBOL
1.050 / 26.67
B
O
MAXIMUM
C
.545 / 13.84
.555 / 14.10
D
.495 / 12.57
.505 / 12.83
E
.003 / 0.08
.007 / 0.18
.830 / 21.08
F
G
.185 / 4.70
.198 / 5.03
H
.497 / 12.62
.530 / 13.46
ORDER CODE: ASI10613
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CBO
IC = 100 mA
110
V
BV CES
IC = 100 mA
110
V
BV CEO
IC = 100 mA
55
V
BV EBO
IE = 10 mA
4.0
V
ICEO
VCE = 30 V
5
mA
ICES
VE = 60 V
5
mA
hFE
VCE = 6 V
43.5
---
Cob
VCB = 50 V
220
pF
-30
dB
dBc
%
GP
IMD3
ηC
IC = 1.4 A
18
f = 1.0 MHz
14
VCE = 50 V
ICQ =100 mA
POUT = 150 W(PEP)
37
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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