TVU004 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU004 is Designed for A 45° D FEATURES: • • • Omnigold™ Metalization System S B S G C D J E MAXIMUM RATINGS I F G IC 1.59 A VCBO 65 V 65 V VCES 3.5 V VEBO PDISS H K O O O O O -65 C to +150 C θ JC 7.0 OC/W SYMBOL inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 .130 / 3.30 .245 / 6.22 H TSTG CHARACTERISTICS MINIMUM G -65 C to +200 C TJ DIM F 31.8 W @ TC = 25 C #8-32 UNC .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10645 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5 mA 20 V BVCES IC = 10 mA 65 V BVCBO IC = 5 mA 65 V BVEBO IE = 5 mA 3.5 V ICBO VCB = 40 V hFE VCE = 5.0 V COB VCE = 25 V PG IMD3 VCE = 25 V POUT = 4.0 W IC = 800 mA 20 f = 1.0 MHz IC = 850 mA f = 860 MHz 8.5 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 20 pF dB dBc REV. A 1/1