ASI ASIMRF234 Npn silicon rf power transistor Datasheet

MRF234
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF234 is Designed for
Large-Signal Amplifier Applications to
100 MHz.
PACKAGE STYLE .380" 4L STUD
.112x45°
FEATURES:
• Common Emitter
C
B
• Omnigold™ Metalization System
• PG = 9.5 dB min. at 25 W/ 90 MHz
ØC
4.0 A
G
F
E
36 V
PDISS
70 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
CHARACTERISTICS
I
J
VCB
θJC
H
#8-32 UNC-2A
18 V
TSTG
B
D
VCE
TJ
E
E
MAXIMUM RATINGS
IC
A
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
J
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 200 mA
36
V
BVCEO
IC = 200 mA
18
V
BVEBO
IE = 5.0 mA
4.0
V
ICBO
VCB = 15 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
GPE
η
VCC = 12.5 V
1.0
IC = 1.0 A
Pout = 25 W
---
5.0
f = 1.0 MHz
f = 90 MHz
mA
100
120
pF
9.5
dB
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Similar pages