ASI ASIPT9701 Npn silicon rf power transistor Datasheet

PT9701
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
IC
1.25 A
VCES
45 V
PDISS
14 W @ TC = 25 °C
TJ
-55 °C to +200 °C
TSTG
-55 °C to +200 °C
θJC
12 °C/W
CHARACTERISTICS
SYMBOL
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 20 mA
25
V
BVCES
IC = 10 mA
45
V
BVEBO
IE = 1.0 mA
3.5
V
hFE
VCE = 5.0 V
15
---
Cob
VCB = 28 V
PG
ηC
VCE = 28 V
IC = 200 mA
f = 1.0 MHz
Pout = 5.0 W
f = 400 MHz
7.0
10
50
12
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
pF
dB
%
REV. A
1/1
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