ASI ASISD1530-7 Npn silicon rf power transistor Datasheet

ASI SD1530-7
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1530-7 is a Common
Base Device Designed for DME, IFF
and Tacan Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Broad Band Performance
PACKAGE STYLE 250 2L FLG (A)
MAXIMUM RATINGS
IC
2.5 A
VCES
55 V
PDISS
125 W @ TC = 25 OC
TJ
-55 OC to +200 OC
T STG
-55 OC to +200 OC
θ JC
1 = COLLECTOR
2 = EMITTER
3 = BASE
O
1.4 C/W
CHARACTERISTICS
SYMBOL
TC = 25 OC
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CES
IC = 75 mA
55
V
BV EBO
IE = 25 mA
4.0
V
hFE
VCE = 5.0 V
10
---
PG
ηC
VCC = 50 V
IC = 300 mA
Pout = 25 W
PULSE WIDTH = 10 µS
fo = 960 to 1215 MHz
DUTY CYCLE = 1.0%
8.5
10
45
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
Similar pages