ASL19D High Gain, Low Noise Amplifier Description Features 24.5 dB Gain at 2 GHz ASL19D is a two-stage LNA, which has a low noise, high gain, and high linearity over a wide range of frequency up to 5 GHz. It is also suitable for use in the low noise amplifier block of the mobile wireless systems of PCS, WCDMA, WiBro, WiMAX, and WLAN so on. The amplifier is available in a DFN6 package and passes the stringent DC, RF, and reliability tests. 36 dBm OIP3 at 2 GHz 19 dBm P1dB at 2 GHz 0.95 dB NF at 2 GHz Two-stage LNA Typical Performance Package Style: DFN6 (Supply Voltage = +3 & +5 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Testing Frequency MHz 2000 2400 2700 3500 2000 2400 2700 Gain dB 24.5 21.5 20.0 16.0 24.0 19.5 19.0 S11 dB -18 -16 -13 -18 -18 -14 -11 dB -10 -11 -14 -10 -9 -11 -12 dBm 36 36.5 37.0 37.5 38.0 39.0 39.0 Noise Figure dB 0.95 1.10 1.25 1.60 0.90 1.10 1.25 Output P1dB dBm 19 19 19 20 23 23 23 Current mA 90 90 90 90 90 90 90 ·1700 ~ 2700 MHz Device Voltage V +3 +3 +3 +3 +4.6 +4.6 +4.6 ·3500 MHz S22 Output IP3 1) Application Circuit 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. Product Specifications Parameters Units Min Typ Frequency MHz Gain dB S11 dB -18 S22 dB -10 Output IP3 dBm Noise Figure dB Output P1dB dBm 18 19 Current mA 60 90 Device Voltage V Max 2000 23.0 24.5 34 36 0.95 1.10 120 +3 100% in-house DC & RF testing is done on packaged products before taping Absolute Maximum Ratings Pin Configuration Pin No. Function Parameters Rating 1 1st (2nd) stage RF IN Operating Case Temperature -40 to 85 C 2,5 Storage Temperature -40 to 150 C Device Voltage +5.5 V Operating Junction Temperature +150 C 4 Input RF Power (CW, 50 matched)1) +22 dBm 88 C/W 6 Thermal Resistance GND or NC 2nd (1st) stage RF OUT nd 2 (1st) stage RF IN 1st (2nd) stage RF OUT 3 1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/7 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier Outline Drawing Part No. Dimensions (In mm) MIN NOM 0.80 0.85 0 0.010 --0.20REF 0.35 0.40 2.95 3.00 --2.25BSC 1.95 2.00 --0.65BSC --0.95BSC 0.275 0.325 -12 --- Symbols A A1 A3 b D D1 E E1 e L ASL19D MAX 0.90 0.030 --0.45 3.03 --2.03 ----0.375 0 Pin No. Function Pin No. Function. 1 1st 4 2nd (1st) stage RF IN 2 GND or NC 5 GND or NC 3 2nd 6 1st (2nd) stage RF OUT (2nd) (1st) stage RF IN stage RF OUT Note: 1. Backside metal paddle is RF and DC ground. 2. Both of pin 1 and pin 4 is marked for reference and can be used as an RF input since ASL19D has two chips in a package in which dies are in 180 symmetry. Mounting Recommendation (In mm) ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A Voltage Level: 400 V MM Class A Voltage Level: 50 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/7 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier APPLICATION CIRCUIT Wide Band Frequency (MHz) 1700 2000 2400 2700 Magnitude S21 (dB) 27.0 24.5 21.5 20.0 Magnitude S11 (dB) -18 -18 -16 -13 Magnitude S22 (dB) -10 -10 -11 -14 Output P1dB (dBm) 19 19 19 19 Output IP3 (dBm) 35.0 36.0 36.5 37.0 Noise Figure (dB) 0.90 0.95 1.10 1.25 Device Voltage (V) +3 Current (mA) 90 1) 1700 ~ 2700 MHz +3 V 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=3 V C7=1 F C6=100 pF L3=39 nH C3=8 pF R2=10 k C5=1 F C4=100 pF L2=39 nH ASL19D C1=10 pF RF IN L1=39 nH C2=10 pF RF OUT R1= 8.2 k S-parameters & K-factor 35 0 30 -5 25 S11 (dB) Gain (dB) -10 20 15 o 5 0 1400 -20 -40 c o 25 c o 85 c 10 1600 1800 2000 2200 2400 2600 2800 -15 o -40 c o 25 c o 85 c -25 3000 -30 1400 1600 1800 Frequency (MHz) 2600 2800 3000 4 o Stability Factor -40 c o 25 c o 85 c -10 S22 (dB) 2400 5 -5 -15 3 2 1 -20 0 1600 1800 2000 2200 2400 2600 2800 3000 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 3/7 2200 Frequency (MHz) 0 -25 1400 2000 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier Gain vs. Temperature Current vs. Temperature 160 30 140 28 26 Gain (dB) Current (mA) 120 100 80 24 Frequency = 2000 MHz 22 60 40 -60 -40 -20 0 20 40 60 80 20 -60 100 o -40 -20 Temperature ( C) 20 40 60 80 100 o P1dB vs. Temperature Output IP3 vs. Temperature 26 50 24 45 Output IP3 (dBm) 22 P1dB (dBm) 0 Temperature ( C) 20 18 Frequency = 2000 MHz -40 -20 0 20 40 60 80 35 Frequency = 2000 MHz 30 16 14 -60 40 100 25 -60 -40 o -20 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 2000 MHz) 50 45 Output IP3 (dBm) 40 35 30 25 o -40 c o 25 c o 85 c 20 15 10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pout per Tone (dBm) 4/7 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier APPLICATION CIRCUIT Wide Band Frequency (MHz) 1700 2000 2400 2700 Magnitude S21 (dB) 26.5 24.0 19.5 19.0 Magnitude S11 (dB) -18 -18 -14 -11 Magnitude S22 (dB) -9 -9 -11 -12 Output P1dB (dBm) 23 23 23 23 Output IP3 (dBm) 36.5 38.0 39.0 39.0 Noise Figure (dB) 0.85 0.90 1.10 1.25 Device Voltage (V) +4.6 Current (mA) 90 1) 1700 ~ 2700 MHz +5 V 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vcc=5 V R3=6.2 C7=1 F C6=100 pF L3=39 nH C3=8 pF R2=5.6 k C5=1 F C4=100 pF L2=39 nH ASL19D C1=10 pF RF IN L1=39 nH C2=10 pF RF OUT R1= 4.7 k S-parameters & K-factor 35 0 30 -5 -10 20 S11 (dB) Gain (dB) 25 15 -15 10 -20 5 0 1400 1600 1800 2000 2200 2400 2600 2800 3000 -25 1400 1600 1800 Frequency (MHz) -5 4 Stability Factor 5 S22 (dB) -10 -15 -20 2400 2600 2800 3000 3 2 1 0 1600 1800 2000 2200 2400 2600 2800 3000 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 5/7 2200 Frequency (MHz) 0 -25 1400 2000 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier APPLICATION CIRCUIT WiMAX Frequency (MHz) 3500 Magnitude S21 (dB) 16 Magnitude S11 (dB) -18 Magnitude S22 (dB) -10 Output P1dB (dBm) 20 1) Output IP3 (dBm) 37.5 3500 MHz Noise Figure (dB) 1.6 +3 V Device Voltage (V) +3 Current (mA) 90 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=3 V C8=1 F C7=100 pF L3=22 nH R2=10 k C4=3 pF C6=1 F C5=100 pF L2=22 nH ASL19D C1=10 pF RF IN L1=22 nH C3=10 pF RF OUT R1= 8.2 k C2=0.5 pF 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters & K-factor 15 -15 10 -20 5 -25 0 2000 2500 3000 3500 4000 4500 5000 -30 2000 2500 3000 5 0 4 Stability Factor 5 S22 (dB) -5 -10 -15 -20 2000 4000 4500 5000 3 2 1 0 2500 3000 3500 4000 4500 5000 0 500 Frequency (MHz) 6/7 3500 Frequency (MHz) Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017 ASL19D High Gain, Low Noise Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2009-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 7/7 ASB Inc. [email protected] Tel: +82-42-528-7225 April 2017