Aplus ASM2012C Very low-cost voice synthesizer with 4-bit microprocessor Datasheet

ASM2012C
DATA SHEET
6F-3 NO.7, LANE 75, TA-AN ROAD, SEC.1, TAIPEI, TAIWAN, R.O.C.
台北市大安路一段75巷7號6F-3
TEL:886-2-27818277 FAX:886-2-27815779
http://www.aplusinc.com.tw
ASM2012C
ASM2012C – VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR
1.0 General Description
The ASM2012C is very low cost voice synthesizer with 4-bit microprocessor. It has various features
including 4-bit ALU, ROM, RAM, I/O ports, timers, clock generator, watchdog timer(WDT), voice
synthesizer, etc. It consists of 22 instructions in the device. With CMOS technology and halt function
can minimize power dissipation. Its architecture is similar to RISC, with two stages of instruction
pipeline. It allows all instructions to be executed in a single cycle, except for program branches and
data table read instructions (which need two instruction cycles).
1.1 Feature
u
u
u
u
u
u
u
u
u
u
u
u
Single power supply can operate from 2.4V through 5V
Internal Program ROM: 4K x 10-bit
1 sets of 16-bit DPR can access up to 64K x 10 bits data memory space
Data Registers:
• 96 x 4-bit data RAM (00-1Fh plus 40h-7Fh)
• Unbanked special function registers (SFR) range: 20h-3Fh
I/O Ports:
• PRA: 4-bit I/O Port A (2Bh)
• PRB: 4-bit Output Port B (2Dh)
• PRC: 4-bit Input Port C (2Fh)
On-chip clock generator: Resistive Clock Drive (RM)
Timer: 1
• Timer0: a 9-bit auto-reload timer/counter
Stack: 2-level subroutine nesting
HALT and Release from HALT function to reduce power consumption
Watch Dog Timer (WDT)
Instruction: 1-cycle instruction except for table read and program branches which are 2-cycles
Number of instruction: 22
1
Rev 1.0
ASM2012C
FIGURE 1.1 : Block Diagram of ASM2012C
Data Bus[3:0]
ROM Latch
PCLATCH(8)
PCL(4)
Stack(12)
PC[11:0]
(2-Level)
(ADDR[15:12])
=0000b
ADDR[15:0]
Instruction Bus [9:0]
1
DPR3,2,1
Instruction
Latch
0 ROM_ADDR[15:0]
Program
(Data)
ROM
DPR[15:0]
Instruction
Decoder
Control Signal
DLATCH(10)
ROM_Data[9:0]
Data Bus[3:0]
Instruction Bus [9:0]
Instruction Bus [9:0]
PCH(8)
Accumlator(4)
PRA(4)
PRB(4)
PRC(4)
SRAM
ALU(4)
Immediate(4)
(96 x 4)
Timer0(9)
00h-1Fh
40h-7Fh
Register(4)
P1,P2,P3,P4
enter test mode
Clock Generator
PRASL(4)
Reset Chip
Reset Chip
Power on Reset
RESET pin
COUT
OSC
Test select
VDD/GND
PRA0
One-Channel
( Voice synthesizer )
weak or strong
pull-low for PRA,
PRB, PRC
COUT
2
Rev 1.0
ASM2012C
FIGURE 1.2 : External ROM Map of ASM2012C
PC[11:0]
12bit x 2 STACK
16-bit Data Pointer
Reset Vector
00000h
00080h
Reserved for Testing
00080h-003FFh
00400h
Program and data ROM
00000h-00FFFh
00FFFh(4K)
Data ROM
00000h-0FFFFh
0FFFFh(64Kx10-bits)
3
Rev 1.0
ASM2012C
1.2 Pin-Out
ASM2012C Pin-Out
PRC1
I
PRC0/RESET
I
STI
Std./O.D.
STI
Std./O.D.
PRA3-1
I/O
STI
Std./O.D.
PRA0/RESET
I/O
STI
Std./O.D.
I
I
O
I
I
O
I
O
I
Std./O.D.
STI
Std./O.D.
OSC
VDD1
COUT
GND1
GND2
TEST
VDD2
PRB0-3
PRC2-3
Input port with programmable strong pull-low or weak pull-low or fix-inputfloating capability
Input port with programmable strong pull-low or weak pull-low or fix-inputfloating capability
Mask option selected as an external RESET pin with weak pull-low capability
I/O port with programmable strong pull-low or weak pull-low or fix-inputfloating capability
Output type with standard or Open-Drain output
I/O port with programmable strong pull-low or weak pull-low or fix-inputfloating capability
Output type with standard or Open-Drain output
Mask option selected as an external RESET pin with weak pull-low capability
RM mode Oscillator input
First Power supply during operation
Current Output of Audio
First Circuit Ground Potential
Second Circuit Ground Potential
Enter Test Mode. ( TEST = High )
Second Power supply during operation
Output type with standard or Open-Drain output
Input port with programmable strong pull-low or weak pull-low or fix-inputfloating capability
1.3 Application circuit
4
Rev 1.0
ASM2012C
1.4 Bonding Diagram
19
18
17
16
RC3
RC2
RC1
RC0
15
GND2
14
VDD2
13
TEST
12
AOSC
( 64K x 10-bit ) Block ROM
ASM2012C
RA3 RA2
1
2
RA1 RA0 VDD1 COUT GND1 RB0
RB1
RB2
RB3
3
9
10
11
4
ASM2012C Pad Location
PAD #
1
2
3
PAD Name
RA3
RA2
RA1
4
5
6
RA0
VDD1
COUT
7
8
GND1
RB0
9
10
RB1
RB2
X
-682.16
-559.84
-437.52
-315.2
-191.28
71.12
189.52
307.92
430.24
552.56
5
6
7
8
Chip Size:
PAD #
-772.68 11
-772.68 12
-772.68 13
X=1540+80 (um), Y=1780+80 (um)
PAD Name
X
Y
RB3
667.68
-772.68
AOSC
633.56
804
TEST
432.48
804
-772.68
-772.68
-772.68
-772.68
-772.68
-772.68
-772.68
14
15
16
VDD2
GND2
RC0
17
18
RC1
RC2
19
RC3
Y
5
273.16
134.68
-51.76
-248.4
-454.24
-650.88
Rev 1.0
804
804
804
804
804
804
ASM2012C
1.5 DC Characteristics for ASM2012C
SYMBOL
PARAMETER
OPERATING
VOLTAGE
VDD
Isb
SUPPLY
CURREN
T
Iop
STANDBY
OPERATING
INPUT CURRENT
/Internal pull low
Iih
OUTPUT HIGH
CURRENT
OUTPUT LOW
CURRENT
Ioh
Iol
VDD MIN. TYP. MAX. UNIT
2.4
3
3
5
3
5
3
5
5
V
1
1
uA
2
7
3
9
mA
uA
5
-5.2
3
5
3
5
-3
-8
7
20
CONDITION
depending on Freq.
4MHz, RM
in HALT Mode
4MHz, RM
IO Floating
4MHz, RM
in HALT Mode
(IO Ports with
weak pull-high
pull-low)
4MHz, RM
(IO ports)
mA
dF/F
FREQUENCY
STABILITY
-10
10
%
dF/F
Fosc VARIATION
-20
20
%
Fosc(3v)Fosc(2.4v)
Fosc (3v)
VDD=3V,
Rosc=220k, 4MHz
FIGURE 1.3 : Frequency Range for Rosc in RM mode
Resistor(k ohm)
3v Freq.(MHz)
330
2.68
220
4.11
200
4.7
150
5.94
Rosc & Freq.
Freq. MHz
8
6
5.94
4.7
4
4.11
2.68
2
0
0
100
200
300
400
Rosc k ohm
6
Rev 1.0
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