ASX620 150 ~ 3000 MHz MMIC Amplifier Description Features 29.5 dB Gain at 900 MHz The ASX620, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 3 GHz. The amplifier is available in a SOIC8 package and passes through the stringent DC, RF, and reliability tests. 33 dBm P1dB at 900 MHz 48 dBm Output IP3 at 900 MHz MTTF > 100 Years Two Power Supplies ASX620 Package Style: SOIC8 Typical Performance (Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 Gain dB 29.5 DMB (196 ~ 216 MHz) S11 dB -15 IF (350 MHz) S22 dB -8 CDMA Output IP31) dBm 48 GSM Noise Figure dB 6.7 RFID (USA) Output P1dB dBm 33 Current mA 950 Device Voltage V +5 Application Circuit 1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Min Typ Testing Frequency MHz Gain dB S11 dB -15 S22 dB -8 Output IP3 dBm Noise Figure dB Output P1dB dBm 31 33 Current mA 900 950 Device Voltage V Max 900 28.5 29.5 46 48 6.7 7.0 1000 +5 Pin Configuration Absolute Maximum Ratings Parameters Rating Pin No. Function Operating Case Temperature -40 to 85 C 1 2nd stage RF IN Storage Temperature -40 to 150 C 2 1st stage RF OUT Device Voltage +6 V Operating Junction Temperature +150 C 3,5,8 GND Input RF Power (CW, 50 matched)1) +25 dBm 4 1st stage RF IN Thermal Resistance 12 C/W 6,7 2nd stage RF OUT 1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/10 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier Outline Drawing Part No. Symbols ASX620 ● A A1 A2 B C D D2 E E1 E2 e L y |L1-L1’| L1 Pin No. 1 2 3 4 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF Function 2nd stage RF IN 1st stage RF OUT GND 1st stage RF IN Pin No. 5 6 7 8 MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 Function. GND 2nd stage RF OUT 2nd stage RF OUT GND Note: 1. Backside metal paddle is RF and DC ground. Mounting Recommendation (In mm) Note: 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground / thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. ESD Classification HBM Class 1B Voltage Level: 500 V ~ 1000 V MM Class A Voltage Level: < 200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/10 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT DMB Frequency (MHz) 196 216 Magnitude S21 (dB) 38.0 38.0 Magnitude S11 (dB) -13 -14 Magnitude S22 (dB) -9 -9 Output P1dB (dBm) 33.0 32.5 Output IP3 (dBm) 46.0 44.5 Noise Figure (dB) 6.7 6.7 Device Voltage (V) +5 +5 Current (mA) 950 950 1) 196 ~ 216 MHz +5 V 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=5 V D1=5.6V Zener Diode C7=1 F R1=3 C6=100pF C9=1 F C8=100pF C5=15 pF C4=100 pF C2=68 pF RF OUT ASX620 L2=100 nH RF IN L1=82 nH (Coil Inductor) L3=6.8 nH 3.5 mm C1=100 pF L4=7.5 nH C3=56 pF S-parameters & K-factor 0 50 -5 30 S11 (dB) Gain (dB) 40 20 -10 -15 10 0 100 150 200 250 300 -20 100 150 0 250 300 5 4 Stability Factor -5 S22 (dB) 200 Frequency (MHz) Frequency (MHz) -10 3 2 -15 1 -20 100 150 200 250 300 0 0 500 Frequency (MHz) 3/10 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 350 Magnitude S21 (dB) 39 Magnitude S11 (dB) -11 Magnitude S22 (dB) -5 Output P1dB (dBm) 32.5 1) 350 MHz +5 V Output IP3 (dBm) 44 Noise Figure (dB) 6.8 Device Voltage (V) +5 Current (mA) 950 1) OIP3 is measured with two tones at an output power of +20 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor 0 45 40 -5 30 -10 25 S11 (dB) Gain (dB) 35 20 -15 15 10 -20 5 0 100 200 300 400 500 600 -25 100 200 300 400 500 600 Frequency (MHz) Frequency (MHz) 0 S22 (dB) -5 -10 -15 -20 100 200 300 400 500 600 Frequency (MHz) 4/10 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT CDMA Rx Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 31.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -8 Output P1dB (dBm) 32.5 1) 824 ~ 849 MHz +5 V Output IP3 (dBm) 48 Noise Figure (dB) 6.7 Device Voltage (V) +5 Current (mA) 950 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C9=100pF C6=5 pF C5=100 pF L1=82 nH (Coil Inductor) L3=2.2 nH C3=68 pF RF OUT 3 mm ASX620 L2=100 nH RF IN 4.5 mm C1=68 pF C4=9 pF C2=1.8 pF 35 -5 30 -10 25 -15 S11 (dB) Gain (dB) S-parameters & K-factor 20 15 10 600 -20 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 -10 -15 600 3 2 1 0 700 800 900 1000 1100 1200 0 500 5/10 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 869 ~ 894 890 ~ 915 Magnitude S21 (dB) 30.0 29.5 Magnitude S11 (dB) -15 -15 Magnitude S22 (dB) -10 -8 CDMA Tx, GSM Rx Output P1dB (dBm) 33 33 869 ~ 915 MHz Output IP31) (dBm) 48 48 Noise Figure (dB) 7.5 6.7 Device Voltage (V) +5 +5 Current (mA) 950 950 +5 V 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C6=3.9 pF C5=100 pF C9=100pF L1=82 nH (Coil Inductor) L3=2.2 nH C3=68 pF RF OUT 3 mm ASX620 L2=100 nH RF IN 3.5 mm C1=68 pF C4=9 pF C2=1.2 pF S-parameters & K-factor 40 0 35 -5 o -40 c o 25 c o 85 c o -40 c o 25 c o 85 c -10 S11 (dB) Gain (dB) 30 25 -15 20 -20 15 10 600 700 800 900 1000 1100 1200 -25 600 700 800 Frequency (MHz) 5 0 4 Stability Factor 5 S22 (dB) -5 -10 o -40 c o 25 c o 85 c -15 -20 600 700 800 900 1000 1000 1100 1200 1100 3 2 1 1200 0 0 500 Frequency (MHz) 6/10 900 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 1100 34 1000 32 Gain (dB) 36 Current (mA) 1200 900 30 800 28 700 26 600 -60 -40 -20 0 20 40 60 80 24 -60 100 Frequency = 880 MHz -40 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 880 MHz) P1dB vs. Temperature MHz) 80 44 70 40 60 Output IP3 (dBm) P1dB (dBm) 36 32 28 40 30 o -40 c o 25 c o 85 c 20 Frequency = 880 MHz 24 20 -60 50 10 -40 -20 0 20 40 60 80 100 0 13 14 15 7/10 16 17 18 19 20 21 22 23 24 25 26 Pout per Tone (dBm) o Temperature ( C) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT GSM Tx Frequency (MHz) 935 ~ 960 Magnitude S21 (dB) 29.0 Magnitude S11 (dB) -15 Magnitude S22 (dB) -8 Output P1dB (dBm) 33 1) 935 ~ 960 MHz +5 V Output IP3 (dBm) 48 Noise Figure (dB) 6.8 Device Voltage (V) +5 Current (mA) 950 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C9=100pF C6=3.9 pF C5=100 pF L1=82 nH (Coil Inductor) L3=2.2 nH C3=68 pF RF OUT 3 mm ASX620 L2=100 nH RF IN 4.5 mm C1=68 pF C4=7.5 pF C2=1 pF 35 -5 30 -10 25 -15 S11 (dB) Gain (dB) S-parameters & K-factor 20 15 10 600 -20 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 8/10 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT RFID (USA) 902 ~ 928 MHz +5 V Country EU 2) USA Korea 2) Japan 2) Frequency (MHz) 865.6 ~ 867.6 902 ~ 928 910 ~ 914 950 ~ 956 Magnitude S21 (dB) 30.5 29 29.5 29 Magnitude S11 (dB) -15 -15 -15 -15 Magnitude S22 (dB) -12 -7.5 -8 -8 Output P1dB (dBm) 33 33 33 33 Output IP31) (dBm) 47.5 48 48 48 Noise Figure (dB) 7.0 6.9 6.7 6.8 Device Voltage (V) 5 5 5 5 Current (mA) 950 950 950 950 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2) Test Results are measured by CDMA Tx (EU), GSM Rx (Korea), GSM Tx (Japan) Application circuits. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C9=100pF C6=3.9 pF C5=100 pF L1=82 nH (Coil Inductor) L3=2.2 nH C3=68 pF RF OUT 3 mm ASX620 L2=100 nH RF IN 3.5 mm C1=68 pF C4=9 pF C2=1.2 pF 35 -5 30 -10 25 -15 S11 (dB) Gain (dB) S-parameters & K-factor 20 15 10 600 -20 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 9/10 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX620 150 ~ 3000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 10/10 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017