MACOM AT-110 Voltage variable absorptive attenuator, 30 db 0.5 - 2 ghz Datasheet

Voltage Variable Absorptive Attenuator, 30 dB
0.5 - 2 GHz
AT-110
V 2.00
Features
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SO-8
Single Positive Voltage Control 0 to +5 Volts
30 dB Voltage Variable Attenuation
±2 dB Linearity from BSL
Low DC Power Consumption
Temperature Range: -40°C to +85°C
Low-Cost SOIC 8 Plastic Package
Tape and Reel Packaging Available
Fast Switching Speed
Description
M/A-COM’s AT-110 is a linear GaAs MMIC voltage
variable absorptive attenuator in a low-cost SOIC
8-lead surface mount plastic package. The AT-110 has
a faster switching speed than the AT-108 or AT-109.
The AT-110 is ideally suited for use where linear
attenuation fine tuning and very low power comsumption are required. Typical applications include
radio,
cellular, GPS equipment and automatic gain/level
control circuits.
The AT-110 is fabricated with a monolithic GaAs
MMIC using a mature 1-micron process. The process
features full chip passivation for increased performance and reliability.
Ordering Information
Part Number
AT-110
AT-110TR
AT-110RTR
*
Package
SOIC 8-Lead Plastic Package
Forward Tape & Reel*
Reverse Tape & Reel*
If specific reel size is required, consult factory for part number
assignment.
Typical Electrical Specifications 1, TA = +25°C
Parameter
Insertion Loss
Attenuation
Flatness
(Peak-to-Peak)
Test Conditions
Units
0.5 - 1.0 GHz
1.0 - 2.0 GHz
0.5 - 16 GHz
1.0 - 26 GHz
dB
dB
dB
dB
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
VSWR
Trise, Tfall
Ton, Toff
Transients
Min.
Typ.
Max.
2.8
3.3
3.0
3.6
±0.5
±1.2
±0.8
±1.5
30
25
2:1
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-band
µS
µS
mV
0.2
0.2
70
1. All measurements at 1 GHz in a 50-Ω system, unless otherwise specified.The RF ports must be blocked outside of the package
from ground or any other voltage.
Voltage Variable Absorptive Attenuator, 30 dB
AT-110
V 2.00
Absolute Maximum Ratings 1
Parameter
Functional Schematic
Absolute Maximum
Maximum Input Power
Supply Voltage VCC
Control Voltage VC
Operating Temperature
Storage Temperature
+21 dBm
-1 V, +8 V
-1 V, VCC +0.5 V
-40°C to +85°C
-65°C to +150°C
1. Operation of this device above any one of these parameters may
cause permanent damage.
V CC = +5 VDC ± 0.5 VDC @ 300 µA max.
VC = 0 VDC to +5 VDC @ 6 mA max.
External DC blocking capacitors are required on all RF ports.
Typical Performance
RELATIVE ATTENUATION
@ +25°C, F = 1800 MHz
vs
CONTROL VOLTAGE
INSERTION LOSS
0
vs
FREQUENCY
4.0
-5
-10
3.0
-15
2.0
-20
-25
1.0
-30
-35
5
4
3
2
1
0
0
0.5
1.0
CONTROL VOLTAGE (VOLTS)
1.5
2.0
FREQUENCY (GHz)
ATTENUATION vs TEMPERATURE,
NORMALIZED TO +25°C, F = 900 MHz
ATTENUATION vs CONTROL VOLTAGE
@ +25°C, F = 900 MHz
0
3
-40°C
2
-10
1
-20
+85°C
0
-1
-30
-2
-40
5
4
3
2
1
CONTROL VOLTAGE (VOLTS)
0
-3
5
4
3
2
1
CONTROL VOLTAGE (VOLTS)
0
Voltage Variable Absorptive Attenuator, 30 dB
AT-110
V 2.00
1dB COMPRESSION vs CONTROL VOLTAGE
@ +25°C, F = 900 MHz
RETURN LOSS vs CONTROL VOLTAGE
@ +25°C, F = 900 MHz
0
30
-5
25
-10
20
-15
15
-20
10
-25
5
-30
-35
0
5
4
3
2
1
0
CONTROL VOLTAGE (VOLTS)
35
IP3
vs
400 MHz
30
25
20
900 MHz
10
5
0
5
4
3
2
1
CONTROL VOLTAGE (VOLTS)
4
3
2
1
CONTROL VOLTAGE (VOLTS)
CONTROL VOLTAGE
15
5
0
0
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