ATMEL AT49HBV010-90TI 1-megabit 128k x 8 single 2.7-volt battery-voltage flash memory Datasheet

AT49(H)BV/(H)LV01
Features
•
•
•
•
•
•
•
•
•
•
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 55 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 µs/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only commands determine
the read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a
program cycle can be optionally detected by the DATA polling feature. Once the end
of a byte program cycle has been detected, a new access for a read or program can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
(continued)
1-Megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
Pin Configurations
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
5
6
7
8
9
10
11
12
13
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
4
3
2
1
32
31
30
A12
A15
A16
NC
VCC
WE
A17
PLCC Top View
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
TSOP Top View
Type 1
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
0677B-A–9/97
1
The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.
Block Diagram
DATA INPUTS/OUTPUTS
I/O0 - I/O7
VCC
GND
OE
WE
CE
ADDRESS
INPUTS
OE, CE AND WE
LOGIC
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y DECODER
Y-GATING
X DECODER
MAIN MEMORY
(120K BYTES)
OPTIONAL BOOT
BLOCK (8K BYTES)
01FFF
00000
Device Operation
READ: The AT49(H)BV/(H)LV010 is accessed like an
EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the
address pins is asserted on the outputs. The outputs are
put in the high impedance state whenever CE or OE is
high. This dual-line control gives designers flexibility in preventing bus contention.
ERASURE: Before a byte can be reprogrammed, the 128K
bytes memory array (or 120K bytes if the boot block featured is used) must be erased. The erased state of the
memory bits is a logical “1”. The entire device can be
erased at one time by using a 6-byte software code. The
software chip erase code consists of 6-byte load commands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The
device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t BP
cycle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
2
AT49(H)BV/(H)LV010
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular programming method. To activate the lockout feature, a series
of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the software product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
AT49(H)BV/(H)LV010
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49(H)BV/(H)LV010 features
DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte
loaded will result in the complement of the loaded data on
I/O7. Once the program cycle has been completed, true
data is valid on all outputs and the next cycle may begin.
DATA polling may begin at any time during the program
cycle.
TOGGLE BIT: In addition to DATA polling the
AT49(H)BV/(H)LV010 provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will
stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49(H)BV/(H)LV010 in the following ways: (a) V CC
sense: if VCC is below 1.8V (typical), the program function
is inhibited. (b) Program inhibit: holding any one of OE low,
CE high or WE high inhibits program cycles. (c) Noise filter:
Pulses of less than 15 ns (typical) on the WE or CE inputs
will not initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to VCC + 0.6V.
Command Definition (in Hex)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
Addr
Data
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
2AAA
55
5555
10
2AAA
55
5555
40
Read
1
Addr
DOUT
Chip Erase
6
5555
AA
2AAA
55
5555
80
5555
AA
Byte
Program
4
5555
AA
2AAA
55
5555
A0
Addr
DIN
Boot Block
Lockout(1)
6
5555
AA
2AAA
55
5555
80
5555
AA
Product ID
Entry
3
5555
AA
2AAA
55
5555
90
Product ID
Exit(2)
3
5555
AA
2AAA
55
5555
F0
Product ID
Exit(2)
1
XXXX
F0
Notes:
5th Bus
Cycle
1. The 8K byte boot sector has the address range 00000H to 01FFFH.
2. Either one of the Product ID exit commands can be used.
Absolute Maximum Ratings*
Temperature Under Bias ......................-55°C to +125°C
Storage Temperature............................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground......................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground................... -0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on OE
with Respect to Ground......................... -0.6V to +13.5V
3
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
AT49HLV
010-55
AT49HBV/
HLV010-70
AT49HBV/
HLV010-90
AT49BV/
LV010-12
AT49BV010-15
0°C - 70°C
0°C - 70°C
0°C - 70°C
0°C - 70°C
0°C - 70°C
Ind.
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
AT49LV010
3.0V to 3.6V
3.0V to 3.6V
3.0V to 3.6V
3.0V to 3.6V
N/A
AT49BV010
N/A
2.7V to 3.6V
2.7V to 3.6V
2.7V to 3.6V
2.7V to 3.6V
Com.
Operating Modes
Mode
CE
OE
WE
Ai
I/O
Read
VIL
VIL
VIH
Ai
DOUT
Program(2)
VIL
VIH
VIL
Ai
DIN
Standby/Write Inhibit
VIH
X(1)
X
X
High Z
Program Inhibit
X
X
VIH
Program Inhibit
X
VIL
X
Output Disable
X
VIH
X
VIL
VIL
VIH
High Z
Product Identification
Hardware
A1 - A16 = VIL, A9 = VH,(3)
A0 = VIL
Manufacturer Code(4)
A1 - A16 = VIL, A9 = VH,(3)
A0 = VIH
Device Code(4)
Software(5)
Notes:
A0 = VIL, A1 - A16 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A16 = VIL
Device Code(4)
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 17H.
5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
50
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
ICC(1)
VCC Active Current
f = 5 MHz; IOUT = 0 mA
25
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
Output High Voltage
IOH = -100 µA; VCC = 3.0V
VOH
Note:
4
1. In the erase mode, ICC is 50 mA.
AT49(H)BV/(H)LV010
Min
2.0
V
0.45
2.4
V
V
AT49(H)BV/(H)LV010
AC Read Characteristics
AT49HLV
010-55
AT49HBV/
HLV010-70
AT49HBV/
HLV010-90
Min
Min
Symbol
Parameter
tACC
Address to Output Delay
55
70
90
tCE (1)
CE to Output Delay
55
70
tOE (2)
OE to Output Delay
30
35
tDF
(3, 4)
tOH
Min
CE or OE to Output
Float
0
Output Hold from OE,
CE or Address,
whichever occurred first
0
Max
25
Max
0
25
AT49BV01015
Max
Units
120
150
ns
90
120
150
ns
40
50
0
70
ns
30
0
40
ns
Max
0
0
AT49BV/
LV010-12
Min
25
Max
0
0
0
Min
0
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
OE
tDF
tACC
HIGH Z
OUTPUT
Notes:
tOH
OUTPUT VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impace on tACC.
3. tDF is specified from OE or CE whichever occurs frist (CL - 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
AC
DRIVING
LEVELS
2.4V
Output Test Load
55/70 ns
AC
MEASUREMENT
LEVEL
1.5V
0.4V
90/120/150 ns
3.0V
3.0V
1.8K
1.8K
OUTPUT
PIN
tR, tF < 5 ns
1.3K
OUTPUT
PIN
30 pF
1.3K
100 pF
Pin Capacitance (f = 1 MHz, T = 25°C)(1)
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
5
AC Byte Load Characteristics
Symbol
Parameter
Min
tAS, tOES
Address, OE Set-up Time
tAH
Address Hold Time
tCS
Units
0
ns
100
ns
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
200
ns
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
200
ns
AC Byte Load Waveforms
WE Controlled
OE
tOES
tOEH
ADDRESS
tAS
tAH
tCH
CE
tCS
WE
tWP
tDS
tWPH
tDH
DATA IN
CE Controlled
OE
tOES
tOEH
ADDRESS
tAS
tAH
tCH
WE
tCS
CE
tWP
tDS
DATA IN
6
Max
AT49(H)BV/(H)LV010
tWPH
tDH
AT49(H)BV/(H)LV010
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Byte Programming Time
tAS
Address Set-up Time
tAH
Typ
Max
Units
µs
30
0
ns
Address Hold Time
100
ns
tDS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
200
ns
tWPH
Write Pulse Width High
200
ns
tEC
Erase Cycle Time
10
seconds
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tWPH
tBP
WE
tAH
tAS
A0-A16
5555
tDH
2AAA
5555
ADDRESS
tDS
AA
DATA
55
A0
INPUT
DATA
Chip Erase Cycle Waveforms
OE
CE
tWP
tWPH
WE
tAS
A0-A16
tDH
tAH
5555
2AAA
5555
5555
2AAA
5555
tDS
DATA
Note:
tEC
AA
55
80
AA
55
10
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE 4
BYTE 5
OE must be high only when WE and CE are both low.
7
Data Polling Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
0
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tWR
Write Recovery Time
Notes:
Min
Typ
Max
Units
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
WE
CE
tOEH
OE
tDH
tOE
tWR
I/O7
A0-A17
An
An
An
An
An
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
0
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay(2)
tOEHP
OE High Pulse
tWR
Write Recovery Time
Notes:
Min
Typ
Max
Units
ns
150
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
CE
tOEH
tOEHP
OE
tDH
I/O6
Notes:
tOE
tWR
HIGH Z
1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
8
AT49(H)BV/(H)LV010
AT49(H)BV/(H)LV010
Software Product
Identification Entry(1)
Boot Block Lockout Feature
Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 90
TO
ADDRESS 5555
LOAD DATA 80
TO
ADDRESS 5555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA AA
TO
ADDRESS 5555
Software Product
Identification Exit(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA F0
TO
ANY ADDRESS
OR
LOAD DATA 40
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE(4)
PAUSE 1 second(2)
LOAD DATA F0
TO
ADDRESS 5555
Notes:
1.
Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2.
Boot block lockout feature enabled.
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
1.
Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2.
A1 - A16 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3.
The device does note remain in identification mode
if powered down.
4.
The device returns to standard operation mode.
5.
Manufacturers Code: 1FH
Device Code: 17H.
9
Ordering Information(1)
ICC (mA)
tACC
(ns)
Active
Standby
70
25
90
120
150
Note:
Ordering Code
Package
0.05
AT49HBV010-70JC
AT49HBV010-70TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49HBV010-70JI
AT49HBV010-70TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49HBV010-90JC
AT49HBV010-90TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49HBV010-90JI
AT49HBV010-90TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49BV010-12JC
AT49BV010-12TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49BV010-12JI
AT49BV010-12TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49BV010-15JC
AT49BV010-15TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49BV010-15JI
AT49BV010-15TI
32J
32T
Industrial
(-40°C - 85°C)
1. The 49(H)BV/(H)LV010 has as optional boot block feature. The part number shown in the Ordering Information table is for
devices with the boot block in the lower address range (i.e., 00000H to 01FFFH). Users requiring the boot block to be in the
higher address range should contact Atmel.
Package Type
32J
32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC)
32T
32-Lead, Thin Small Outline Package (TSOP)
10
Operation Range
AT49(H)BV/(H)LV010
AT49(H)BV/(H)LV010
Ordering Information (Continued)
ICC (mA)
tACC
(ns)
Active
Standby
55
25
70
90
120
Ordering Code
Package
Operation Range
0.05
AT49HLV010-55JC
AT49HLV010-55TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49HLV010-55JI
AT49HLV010-55TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49HLV010-70JC
AT49HLV010-70TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49HLV010-70JI
AT49HLV010-70TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49HLV010-90JC
AT49HLV010-90TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49HLV010-90JI
AT49HLV010-90TI
32J
32T
Industrial
(-40°C - 85°C)
25
0.05
AT49LV010-12JC
AT49LV010-12TC
32J
32T
Commercial
(0°C - 70°C)
25
0.05
AT49LV010-12JI
AT49LV010-12TI
32J
32T
Industrial
(-40°C - 85°C)
Package Type
32J
32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC)
32T
32-Lead, Thin Small Outline Package (TSOP)
11
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