ATMEL AT49LV040T-15VI 4-megabit 512k x 8 single 2.7-volt battery-voltage flash memory Datasheet

Features
•
•
•
•
•
•
•
•
•
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Chip Erase Cycle Time - 10 seconds
Byte-by-Byte Programming - 30 µs/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
– 8 x 8 mm CBGA
– 8 x 14 mm V-TSOP
Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW
over the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
(continued)
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
CBGA Top View
1
2
3
4
5
6
4-Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage™
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
AT49BV/LV040
7
A
GND I/O6 VCC VCC I/O2 OE GND
B
A17 I/O7 I/O4 NC NC I/O0 CE
C
A10 NC I/O5 NC I/O3 I/O1 A0
OE
Output Enable
WE
Write Enable
E
I/O0 - I/O7
Data Inputs/Outputs
F
D
A14 A13 A9
NC NC
A6
A3
A4
A1
NC A18 A5
A2
A16 A11 WE NC
A15 A12 A8
A7
PLCC Top View
V - TSOP Top View (8 x 14 mm) or
T - TSOP Top View (8 x 20 mm)
0679AX-A–9/97
1
To allow for simple in-system reprogrammability, the
AT49BV/LV040 does not require high input voltages for
programming. Three-volt-only commands determine the
read and programming operation of the device. Reading
data out of the device is similar to reading from an EPROM.
Reprogramming the AT49BV/LV040 is performed by erasing the entire 4 megabits of memory and then programming
on a byte-by-byte basis. The typical byte programming
time is a fast 30 µs. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the
end of a byte program cycle has been detected, a new
access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000
cycles.
The optional 16K bytes boot block section includes a reprogramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.
Block Diagram
AT49BV/LV040
DATA INPUTS/OUTPUTS
I/O7 - I/O0
VCC
GND
OE
WE
CE
ADDRESS
INPUTS
AT49BV/LV040T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
OE, CE, AND WE
LOGIC
8
DATA LATCH
DATA LATCH
INPUT/OUTPUT
BUFFERS
INPUT/OUTPUT
BUFFERS
Y DECODER
Y-GATING
X DECODER
MAIN MEMORY
(496K BYTES)
Y-GATING
7FFFFH
7FFFFH
OPTIONAL BOOT
BLOCK (16K BYTES)
03FFFH
7C000H
MAIN MEMORY
(496K BYTES)
OPTIONAL BOOT
BLOCK (16K BYTES)
00000H
00000H
Device Operation
READ: The AT49BV/LV040 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dualline control gives designers flexibility in preventing bus contention.
ERASURE: Before a byte can be reprogrammed, the
512K bytes memory array (or 496K bytes if the boot block
featured is used) must be erased. The erased state of the
memory bits is a logical “1”. The entire device can be
erased at one time by using a 6-byte software code. The
software chip erase code consists of 6-byte load commands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is erased,
the device is programmed (to a logical “0”) on a byte-bybyte basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert
2
AT49BV/LV040
“0”s to “1”s. Programming is accomplished via the internal
device command register and is a 4 bus cycle operation
(please refer to the Command Definitions table). The
device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t BP
cycle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 16K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; the boot block's usage as a write protected region is
optional to the user. The address range of the
AT49BV/LV040 boot block is 00000H to 03FFFH while the
address range of the AT49BV/LV040T boot block is
7C000H to 7FFFFH.
AT49BV/LV040
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular programming method. To activate the lockout feature, a series
of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the software product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel.
It may be accessed by hardware or software operation.
The hardware operation mode can be used by an external
programmer to identify the correct programming algorithm
for the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49BV/LV040 features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all outputs and the next cycle may begin. DATA polling
may begin at any time during the program cycle.
TO G G L E B I T: I n a d d i t i o n t o D A T A p o l l i n g t h e
AT49BV/LV040 provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the AT49BV/LV040
in the following ways: (a) VCC sense: if VCC is below 1.8V
(typical), the program function is inhibited. (b) Program
inhibit: holding any one of OE low, CE high or WE high
inhibits program cycles. (c) Noise filter: pulses of less than
15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
INPUT LEVELS: While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to VCC + 0.6V.
3
Command Definition (in Hex)
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
5555
4
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
5555
AA
2AAA
55
5555
A0
Addr
DIN
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
40
Product ID Entry
3
5555
AA
2AAA
55
5555
90
Product ID Exit(2)
3
5555
AA
2AAA
55
5555
F0
Product ID Exit(2)
1
XXXX
F0
Byte Program
Boot Block Lockout
Notes:
(1)
1.
The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49BV/LV040 and 7C000H to 7FFFFH for the
AT49BV/LV040T.
2.
Either one of the Product ID exit commands can be used.
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ............................ -0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ..................................-0.6V to + 13.5V
4
AT49BV/LV040
*NOTICE:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
AT49BV/LV040
DC and AC Operating Range
Operating
Temperature (Case)
AT49BV/LV040-12
AT49BV/LV040-15
AT49BV/LV040-20
0°C - 70°C
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V/3.0V to 3.6V
2.7V to 3.6V/3.0V to 3.6V
2.7V to 3.6V/3.0V to 3.6V
Com.
Ind.
VCC Power Supply
Operating Modes
CE
OE
WE
Ai
I/O
VIL
VIL
VIH
Ai
DOUT
Program
VIL
VIH
VIL
Ai
DIN
Standby/Write Inhibit
VIH
X(1)
X
X
High Z
Program Inhibit
X
X
VIH
Program Inhibit
X
VIL
X
Output Disable
X
VIH
X
Mode
Read
(2)
High Z
Product Identification
Hardware
VIL
VIL
VIH
Software(5)
Notes:
A1 - A18 = VIL, A9 = VH,(3)
A0 = VIL
Manufacturer Code(4)
A1 - A18 = VIL, A9 = VH,(3)
A0 = VIH
Device Code(4)
A0 = VIL, A1 - A18 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A18 = VIL
Device Code (4)
1.
X can be VIL or VIH.
2.
Refer to AC Programming Waveforms.
3.
VH = 12.0V ± 0.5V.
4.
Manufacturer Code: 1FH
Device Code: 13H (AT49BV/LV040), 12H (AT49BV/LV040T).
5.
See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
50
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
ICC(1)
VCC Active Current
f = 5 MHz; IOUT = 0 mA, VCC = 3.6V
25
mA
VIL
Input Low Voltage
0.8
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -100 µA; VCC = 3.0V
Note:
1.
Min
Typ
12
2.0
V
0.45
2.4
V
V
In the erase mode, ICC is 50 mA.
5
AC Read Characteristics
AT49BV/LV040-12
Symbol
Parameter
tACC
Address to Output Delay
120
tCE(1)
CE to Output Delay
120
tOE(2)
OE to Output Delay
0
50
0
70
CE or OE to Output Float
0
30
0
40
Output Hold from OE, CE or Address,
whichever comes first
0
tDF
(3)(4)
tOH
Min
AT49BV/LV040-15
Max
Min
Max
AT49BV/LV040-20
Max
Units
150
200
ns
150
200
ns
0
80
ns
0
50
ns
0
Min
0
AC Read Waveforms(1)(2)(3)(4)
Notes:
1.
CE may be delayed up to tACC - tCE after the address transition without impact on tACC .
2.
OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address
change without impact on tACC .
3.
tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4.
This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement level
Output test Load
tR, tF < 5 ns
Pin Capacitance
(f = 1 MHz, T = 25°C) (1)
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
6
1.
This parameter is characterized and is not 100% tested.
AT49BV/LV040
ns
AT49BV/LV040
AC Byte Load Characteristics
Symbol
Parameter
tAS, tOES
Address, OE Set-up Time
tAH
Address Hold Time
tCS
Min
Max
Units
0
ns
100
ns
Chip Select Set-up Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
200
ns
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
200
ns
AC Byte Load Waveforms
WE Controlled
CE Controlled
7
Program Cycle Characteristics
Symbol
Parameter
tBP
Byte Programming Time
tAS
Address Set-up Time
tAH
Typ
Max
Units
30
50
µs
0
ns
Address Hold Time
100
ns
tDS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
200
ns
tWPH
Write Pulse Width High
200
ns
tEC
Erase Cycle Time
Program Cycle Waveforms
Chip Erase Cycle Waveforms
Note:
8
Min
OE must be high only when WE and CE are both low.
AT49BV/LV040
10
seconds
AT49BV/LV040
Data Polling Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
0
ns
tOEH
OE Hold Time
10
ns
tOE
OE to Output Delay (2)
tWR
Write Recovery Time
Notes:
Min
1.
These parameters are characterized and not 100% tested.
2.
See tOE spec in AC Read Characteristics.
Typ
Max
Units
ns
0
ns
Data Polling Waveforms
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
Min
OE to Output Delay
tOEHP
OE High Pulse
tWR
Write Recovery Time
Max
Units
0
ns
10
ns
(2)
tOE
Typ
ns
150
ns
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
Notes:
1.
Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2.
Beginning and ending state of I/O6 will vary.
3.
Any address location may be used but the address should not vary.
9
Software Product
Identification Entry(1)
Boot Block Lockout
Feature Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA 90
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
ENTER PRODUCT
IDENTIFICATION
(2)(3)(4)
MODE
LOAD DATA 40
TO
ADDRESS 5555
Software Product
Identification Exit(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
OR
PAUSE 1 second
LOAD DATA AA
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE (4)
LOAD DATA F0
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE (4)
Notes for software product identification:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. A1 - A18 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if
powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH
Device Code: 13H (AT49BV/LV040), 12H
(AT49BV/LV040T).
10
AT49BV/LV040
(2)
Notes for boot block lockout feature enable:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Boot block lockout feature enabled.
AT49BV/LV040
Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
150
25
200
150
200
Ordering Code
Package
Operation Range
0.05
AT49BV040-15CC
AT49BV040-15JC
AT49BV040-15TC
AT49BV040-15VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49BV040-15CI
AT49BV040-15JI
AT49BV040-15TI
AT49BV040-15VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49BV040-20CC
AT49BV040-20JC
AT49BV040-20TC
AT49BV040-20VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49BV040-20CI
AT49BV040-20JI
AT49BV040-20TI
AT49BV040-20VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49BV040T-15CC
AT49BV040T-15JC
AT49BV040T-15TC
AT49BV040T-15VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49BV040T-15CI
AT49BV040T-15JI
AT49BV040T-15TI
AT49BV040T-15VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49BV040T-20CC
AT49BV040T-20JC
AT49BV040T-20TC
AT49BV040T-20VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49BV040T-20CI
AT49BV040T-20JI
AT49BV040T-20TI
AT49BV040T-20VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
Package Type
32J
32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC)
32T
32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 20 mm
32V
32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 14 mm
42C1
42-Ball, Plastic Chip-Scale Ball Grid Array (CBGA) 8 x 8 mm
11
Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
150
25
200
150
200
Ordering Code
Package
0.05
AT49LV040-15CC
AT49LV040-15JC
AT49LV040-15TC
AT49LV040-15VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49LV040-15CI
AT49LV040-15JI
AT49LV040-15TI
AT49LV040-15VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49LV040-20CC
AT49LV040-20JC
AT49LV040-20TC
AT49LV040-20VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49LV040-20CI
AT49LV040-20JI
AT49LV040-20TI
AT49LV040-20VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49LV040T-15CC
AT49LV040T-15JC
AT49LV040T-15TC
AT49LV040T-15VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49LV040T-15CI
AT49LV040T-15JI
AT49LV040T-15TI
AT49LV040T-15VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
25
0.05
AT49LV040T-20CC
AT49LV040T-20JC
AT49LV040T-20TC
AT49LV040T-20VC
42C1
32J
32T
32V
Commercial
(0°C to 70°C)
25
0.05
AT49LV040T-20CI
AT49LV040T-20JI
AT49LV040T-20TI
AT49LV040T-20VI
42C1
32J
32T
32V
Industrial
(-40°C to 85°C)
Package Type
32J
32-Lead, Plastic J-Leaded Chip Carrier Package (PLCC)
32T
32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 20 mm
32V
32-Lead, Plastic Thin Small Outline Package (TSOP) 8 x 14 mm
42C1
42-Ball, Plastic Chip-Scale Ball Grid Array (CBGA) 8 x 8 mm
12
AT49BV/LV040
Operation Range
Similar pages