RF ATC800A820JT 280w gan wideband pulsed power amplifier Datasheet

RFHA1025
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
280W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
Features

Wideband Operation: 0.96GHz to
1.215GHz

Advanced GaN HEMT Technology

Advanced Heat-Sink Technology

RF IN
VG
Pin 1 (CUT )
RF OUT
T
VD
Pin 2
Supports Multiple Pulse
Conditions
G
GND
B
BASE
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances




Functional Block Diagram
50V Operation Typical
Performance





Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Applications



Radar
Product Description
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
RFHA1025PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 0.96GHz to .215GHz;50V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
RFHA1025
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to 2
V
Gate Current (IG)
155
mA
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
-40 to +85
°C
250
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1B
MTTF (TJ < 200°C, 95% Confidence Limits)*
1.8E + 07
Hours
MTTF (TJ < 250°C, 95% Confidence Limits)*
1.1E + 05
Hours
Thermal Resistance, RTH (junction to case):
TC = 85°C, DC bias only
TC = 85°C, 100s pulse, 10% duty cycle
TC = 85°C, 1ms pulse, 10% duty cycle
0.90
0.18
0.34
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
°C/W
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Recommended Operating Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
50
-8
Drain Bias Current
Frequency of Operation
-3
V
-2
440
960
V
mA
1215
MHz
IG (OFF) – Gate Leakage
2
mA
VG = -8V, VD = 0V
ID (OFF) – Drain Leakage
2.5
mA
VG = -8V, VD = 50V
DC Functional Test
VGS (TH) – Threshold Voltage
-3.5
V
VD = 50V, ID = 40mA
VDS (ON) – Drain Voltage at High
Current
0.28
V
VG = 0V, ID = 1.5A
RF Functional Test
[1], [2]
Small Signal Gain
17
dB
f = 960MHz, PIN = 28dBm
13
14.2
dB
f = 960MHz, PIN = 41dBm
Output Power
54
55.2
dBm
Drain Efficiency
50
55
%
17
dB
f = 1215MHz, PIN = 28dBm
13
13.6
dB
f = 1215MHz, PIN = 41dBm
Output Power
54
54.6
dBm
Drain Efficiency
50
59
%
Power Gain
Input Return Loss
-7.5
Small Signal Gain
Power Gain
Input Return Loss
2 of 10
-7
-5
-5
dB
dB
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120928
RFHA1025
Parameter
Min.
Specification
Typ.
Max.
Unit
RF Typical Performance
Condition
[1], [2]
Frequency Range
960
1215
MHz
Small Signal Gain
17
dB
PIN = 28dBm
Power Gain
14
dB
POUT = 54.5dBm
Gain Variation with Temperature
Output Power (PSAT)
Drain Efficiency
dB/°C
54.5
dBm
280
W
55
%
At peak output power
Peak output power
At peak output power
[1] Test Conditions: PW = 100s, DC = 10%, VDSQ = 50V, IDQ = 440mA, T = 25°C.
[2] Performance in a standard tuned test fixture.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 10
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
GainversusOutputPower(f=1100MHz)
(Pulsed10%dutycycle,PW=100ђƐ,VD=50V,
EfficiencyversusOutputPower(f=1100MHz)
IDQ =440mA)
(Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ=440mA)
20
70
19
60
DrainEfficiency(%)
Gain(dB)
18
17
16
15
Gain85°C
Gain25°C
Gain40°C
14
Eff85°C
Eff25°C
Eff40°C
50
40
30
20
13
10
47
49
51
OutputPower(dBm)
53
45
55
49
51
OutputPower(dBm)
53
55
SmallSignalPerformanceversusFrequency,POUT =45dBm
InputReturnLossversusOutputPower(f=1100MHz)
(Pulsed10%dutycycle,PW=100μƐ, VD=50V,IDQ =440mA)
(Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ=440mA)
19
4
7
Fixedtuned testcircuit
6
18
9
17
11
16
13
15
15
10
12
14
IRL85°C
IRL25°C
IRL40°C
16
18
Gain
14
20
17
IRL
13
47
49
51
OutputPower(dBm)
53
55
950
Gain/IRLversusFrequency,POUT =54.5dBm
1050
1100
1150
Frequency(MHz)
1200
19
1250
(Pulsed10%dutycycle,PW=100μS,VD=50V,IDQ =440mA)
65
6
Fixedtuned testcircuit
1000
DrainEfficiencyversusFrequency,POUT =54.5dBm
(Pulsed10%dutycycle,PW=100ђƐ, VD =50V,IDQ =440mA)
20
19
InputReturnLoss(dB)
8
Gain(dB)
IRL,InputReturnLoss(dB)
47
Fixedtuned testcircuit
63
7
61
18
8
17
9
16
10
15
11
12
Gain
13
12
950
4 of 10
1000
57
55
53
51
49
IRL
13
DrainEfficiency(%)
14
InputReturnLoss(dB)
Gain(dB)
59
1050
1100
Frequency(MHz)
1150
1200
14
1250
Eff
47
45
950
1000
1050
1100
1150
Frequency(MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1200
1250
DS120928
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
Gain/EfficiencyversusPOUT,Freq=1100MHz
POUT/DEversusPulseWidth,Freq=1100MHz
60
18
55
17
50
16
45
15
40
14
Gain
35
13
DrainEff
30
25
12
47
48
49
50
51
52
POUT ,OutputPower(dBm)
53
54
55
POUT(W)
19
DrainEfficiency(%)
Gain(dB)
65
400
70
375
65
350
60
325
DrainEff
300
45
40
250
10
100
PulseWidth(μsec)
1000
PulsePowerDissipationDeratingCurve
(BasedonMaximumpackagetemperatureandRth)
(Pulsed,PW=100μS,VD =50V,IDQ =440mA)
375
70
1200
350
65
1000
325
60
300
55
275
50
OutputPower
1mSPulseWidth,10%DutyCycle
PowerDissipation(W)
100SPulseWidth,10%DutyCycle
DrainEfficiency(%)
POUT (W)
50
275
POUT/DEversusDutyCycle,Freq=1100MHz
250
55
OutputPower
DrainEfficiency(%)
(Pulsed10%dutycycle,VD =50V,IDQ =440mA)
(Pulsed10%dutycycle,PW=100μS,VD =50V,IDQ =440mA)
20
800
600
400
45
200
40
0
DrainEff
225
10
DS120928
15
20
25
30
35
DutyCycle(%)
40
45
50
0
20
40
60
80
100
120
140
MaximumCaseTemperature(°C)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
RFHA1025
Package Drawing
(All dimensions in mm.)
16.700
0.600± 0.05
2 MIN
3.5 MAX
3.000
3.100 4x
2.600 4x
15.800
17.40± 0.1
8.000
2 MIN
3.5 MAX
0.254±0.127
Lid
3.000
0.600± 0.05
4.054±0.327
1.400
3.800±0.2
20.400
0.100+0.05
-0.02
24.00± 0.1
Pin Names and Descriptions
Pin
1
2
3
6 of 10
Name
RF IN VG
RF OUT VD
GND BASE
Description
Gate – VG RF Input
Drain – VD RF Output
Source – Ground Base
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120928
RFHA1025
Bias Instruction for RFHA1025 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD
must be removed before VG is removed. Failure to follow this sequence will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended that a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board
.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 10
RFHA1025
Evaluation Board Schematic
VDRAIN
VGATE
C15
C16
+
C14
+
R3
C13
L5
L6
L3
L4
R2
C12
C9
R1
C6
C11
C7
C10
C8
L2
L1
J1
RF IN
50  strip
RFHA1025
C4
C1
C17
C3
C5
J2
RF OUT
50  strip
C2
Evaluation Board Bill of Materials
8 of 10
Component
Value
Manufacturer
Part Number
R1,R3
R2
C6
C4, C5, C9, C10
C2, C3
C17
C12
C13
C7
C8
C14, C16
L1,L2
L5, L6
L3, L4
C1, C11, C15
10
51
82pF
100pF
2pF
0.2pF
10000pF
0.1F
10000pF
0.1F
10F
68nH
115, 10A
75, 10A
NOT POPULATED
Panasonic
Panasonic
ATC
ATC
ATC
ATC
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Coilcraft
Steward
Steward
-
ERJ-8GEYJ100V
ERJ-8GEYJ510
ATC800A820JT
ATC800A101JT
ATC800A2R0BT
ATC800A0R2BT
ECJ-2VB1H103K
ECJ-2VB1H104K
ECJ-2VB2A103K
ECJ-2VB2A104K
ECA-2AM100
1812SMS-68NJLB
28F0181-1SR-10
35F0121-1SR-10
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120928
RFHA1025
Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load ()
960MHz
68 - j10
63 – j20
1100MHz
55 + j30
65 + j32
1215MHz
30 + j20
40 + j30
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 10
RFHA1025
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a
high humidity, high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance. The
user may choose alternate conditions for biasing this device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
10 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120928
Similar pages