0.5 – 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • High Output Power: 21.0␣ dBm Typical P 1 dB at 4␣ GHz • Hermetic Gold-Ceramic Microstrip Package Description The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. 70 mil Package This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA GA Gain @ NFO: VDS =3 V, IDS = 20 mA P1 dB G1 dB Power Output @ 1 dB Gain Compression: VDS =5 V, IDS =50 mA 1 dB Compressed Gain: VDS =5 V, IDS =50 mA gm Transconductance: VDS = 3 V, VGS = 0 V IDSS Saturated Drain Current: VDS =3 V, VGS = 0 V VP Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 5-57 Units Min. Typ. Max. f = 4.0 GHz f = 6 0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz dB dB dB dB dB dB f = 4.0 GHz dBm 21.0 f = 4.0 GHz dB 15.0 13.0 0.8 1.0 1.2 14.0 11.5 9.0 1.0 mmho 50 80 mA 50 100 150 V -3.0 -2.0 -0.8 5965-8712E ATF-25170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 3.3 mW/°C for TMOUNTING SURFACE >40°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Absolute Maximum[1] +7 -4 -8 IDSS 450 175 -65 to +175 Units V V V mA mW °C °C θjc = 300°C/W; TCH = 150°C 1␣ µm Spot Size[4] Thermal Resistance: Liquid Crystal Measurement: ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA Γopt Freq. GHz NFO dB Mag Ang 1.0 2.0 4.0 6.0 8.0 0.6 0.7 0.8 1.0 1.2 .89 .77 .63 .66 .62 24 50 105 147 -159 RN/50 .78 .53 .33 .06 .11 ATF-25170 Typical Performance, TA = 25°C 2.0 12 1.5 9 |S21|2 1.0 6 5 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. 10 1.5 NFO 0.5 1.0 12 0 2.0 NFO (dB) MAG GA GA (dB) GA 15 10 14 15 MSG NFO (dB) GAIN (dB) 20 0 0.5 16 18 NFO 1.0 0.5 0 4.0 6.0 8.0 10.0 12.0 FREQUENCY (GHz) Figure 2. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 3V, IDS = 20 mA. 5-58 0 10 20 30 40 50 60 IDS (mA) Figure 3. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 3V, f = 4.0 GHz. GA (dB) 25 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .98 .96 .88 .80 .77 .71 .65 .60 .56 .56 .55 .53 .53 S11 Ang. -23 -38 -66 -86 -106 -127 -149 -173 161 136 118 108 95 S21 Mag. 4.80 4.46 3.75 3.23 2.93 2.66 2.47 2.33 2.20 2.05 1.87 1.76 1.71 dB 13.6 13.0 11.5 10.2 9.3 8.5 7.9 7.3 6.8 6.2 5.4 4.9 4.7 Ang. 160 147 121 102 82 62 42 24 5 -14 -31 -46 -62 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions .040 1.02 SOURCE 4 .020 .508 GATE DRAIN 3 1 2 SOURCE .004 ± .002 .10 ± .05 .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 5-59 dB -32.8 -23.6 -23.6 -21.8 -19.7 -18.6 -17.7 -16.5 -15.8 -15.1 -15.0 -14.9 -14.8 S12 Mag. .023 .037 .066 .081 .103 .118 .130 .149 .162 .175 .178 .180 .183 S22 Ang. 76 67 50 41 28 17 6 -4 -16 -26 -35 -42 -52 Mag. .50 .48 .44 .41 .38 .35 .30 .26 .22 .21 .21 .22 .23 Ang. -23 -30 -45 -55 -65 -78 -93 -111 -134 -166 173 164 159