AVAGO ATF-53189-BLK Enhancement mode pseudomorphic hemt in sot 89 package single voltage operation Datasheet

ATF-53189 ­
Enhancement Mode [1] Pseudomorphic HEMT
in SOT 89 ­Package
Data Sheet
Description
Features
Avago Technologies’s ATF‑53189 is a single-voltage high
linearity, low noise E‑pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
high-linearity, low noise, m
­ edium-power amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
• Single voltage operation
ATF-53189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS application,
and general-purpose discrete E‑pHEMT amplifiers that
require medium power and high linearity. All devices are
100% RF and DC tested.
• SOT 89 standard package
• High Linearity and Gain
• Low Noise Figure
• Excellent uniformity in product specifications
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specifications
Pin Connections and Package Marking
2 GHz, 4.0V, 135 mA (Typ.)
• 40.0 dBm Output IP3
• 23.0 dBm Output Power at 1dB gain compression
3GX
#1
#2
RFin
GND
Top View
• 0.85 dB Noise Figure
• 15.5 dB Gain
#3
RFout
#3
#2
RFout
GND
Bottom View
Notes:
Package marking provides orientation and identification:
“3G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
#1
RFin
• 46% PAE at P1dB
• LFOM[3] 12.7 dB
Applications
• Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
ATF-53189 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute
Maximum
Vds
Drain–Source Voltage[2]
V
7
Vgs
Gate­–Source Voltage
V
-5 to 1.0
Vgd
Gate Drain Voltage[2]
V
-5 to 1.0
Ids
Drain Current
mA
300
Igs
Gate Current
mA
20
Pdiss
Total Power Dissipation
W
1.0
Pin max.
RF Input Power
dBm
+24
Tch
Channel Temperature
°C
150
Tstg
Storage Temperature
°C
-65 to 150
[2]
[2]
[3]
Thermal Resistance[2,4]
θch-b = 70°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is
25°C. Derate 14.30 mW/°C for TB > 80°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal Measurement method.
ATF-53189 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified.
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.0V, Ids = 135 mA
V­—
0.65­—
Vth
Threshold Voltage
Vds = 4.0V, Ids = 8 mA
V
—
0.30
—
Ids
Drain to Source Current
Vds = 4.0V, Vgs = 0V
µA
—
3.70
—
Gm
Transconductance
Vds = 4.0V, Gm = ∆Ids/∆Vgs; mmho­—
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
650
—
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
µA
-10.0
-0.34­—
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
dB
dB
—
—
—
0.80
0.85
1.00
—
1.3
—
G
Gain [1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
dB
dB
—
14.0
—
17.2
15.5
15.0
—
17.0
—
OIP3
Output 3rd Order Intercept Point[1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
dBm
dBm
—
36.0
—
42.0
40.0
38.6
—
—
—
P1dB
Output 1dB Compressed [1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
dBm
dBm
—
—
—
21.7
23.0
23.2
—
—
PAE
Power Added Efficiency
f=900 MHz
f=2.0 GHz
f=2.4 GHz
%
%
%
—
—
—
33.8
46.0
49.0
—
—
dBc
dBc
—
—
-54.0
-64.0
—
—
NF
Noise Figure
ACLR
Notes:
Adjacent Channel Leakage
Offset BW = 5 MHz
Power Ratio [1,2]
Offset BW = 10 MHz
1. Measurements at 2 GHz obtained using production test board described in Figure 1.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -8 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2
Input Matching Circuit
Γ_mag=0.74
Γ_ang=-112.4°
Input
Output Matching Circuit
Γ_mag=0.40
Γ_ang=120.0°
DUT
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and
ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit
losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]
150
150
Stdev=0.08
Stdev=0.86
120
90
–3 Std
FREQUENCY
FREQUENCY
120
+3 Std
60
–3 Std
+3 Std
60
30
30
0
90
0
36 37 38 39 40 41 42 43 44 45
.5
.6
.7
.8
1.1
150
150
Stdev=1.14
Stdev=0.22
120
90
–3 Std
+3 Std
60
FREQUENCY
120
FREQUENCY
1
Figure 3. NF @ 2 GHz, 4V, 135 mA.
USL = 1.30 dBm, Nominal = 0.84 dBm.
Figure 2. OIP3 @ 2 GHz, 4V, 135 mA.
LSL = 36 dBm, Nominal = 40 dBm.
90
–3 Std
+3 Std
60
30
30
0
.9
NF (dB)
OIP3 (dBm)
0
14.5
15
15.5
16
16.5
Gain (dB)
Figure 4. Gain @ 2 GHz, 4V, 135 mA.
LSL = 14 dBm, Nominal = 15.5 dBm,
USL = 17 dBm.
19
20
21
22
23
24
25
26
P1dB (dBm)
Figure 5. P1dB @ 2 GHz, 4V, 135 mA.
Nominal = 23 dBm.
Notes:
1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower
limits.
2. Measurements are made on production test board, which represents a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses have been de‑embedded from actual measurements.
3
Gamma Load and Source at Optimum OIP3 Tuning Conditions
The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent
bias.
Typical Gammas at Optimum OIP3 [1]
Freq
(GHz)
Gamma Source
Mag
Ang (deg)
Gamma Load
Mag
Ang (deg)
OIP3
(dBm)
Gain
(dB)
P1dB
(dBm)
PAE
(%)
0.9
0.8179
-143.28
0.0721
124.08
42.0
17.2
21.7
33.8
2.0
0.7411
-112.36
0.4080
119.91
41.6
15.6
23.4
44.2
3.9
0.6875
-94.23
0.4478
174.74
41.3
11.2
23.1
41.4
5.8
0.5204
-75.91
0.3525
-120.13
36.9
5.6
22.4
25.7
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
400
0.9V
350
Ids (mA)
300
0.8V
250
0.7V
200
150
0.6V
100
0.5V
50
0
0
1
2
3
4
Vds (V)
Figure 6. Typical IV Curve.
4
5
6
7
45
45
40
40
35
35
OIP3 (dBm)
OIP3 (dBm)
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
30
30
3V
4V
5V
25
20
75
90
105
120
135
150
Ids (mA)
Figure 7. OIP3 vs. Ids and Vds at 900 MHz
165
180
20
120
135
Ids (mA)
Figure 8. OIP3 vs. Ids and Vds at 2 GHz
105
35
30
165
180
75
90
105
120
135
150
Ids (mA)
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz
165
180
165
180
16
15
14
3V
4V
5V
25
165
180
12
120
135
150
Ids (mA)
Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz
18
12
17
10
16
8
GAIN (dB)
14
15
12
75
90
105
120
135
150
Ids (mA)
Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz
75
90
105
6
4
3V
4V
5V
13
3V
4V
5V
13
19
14
3V
4V
5V
2
165
180
0
75
90
105
120
135
150
Ids (mA)
Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz
Note:
Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
5
150
17
GAIN (dB)
OIP3 (dBm)
90
18
40
GAIN (dB)
75
19
45
20
3V
4V
5V
25
8
35
6
GAIN (dB)
40
30
3V
4V
5V
105
120
135
Ids (mA)
150
165
Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz
30
50
30
10
20
5
10
0
-2
2
6
10
Pin (dBm)
Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=900 MHz
-6
30
20
50
40
15
30
10
20
5
10
0
-14
0
10
-2
2
6
Pin (dBm)
Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=900MHz
-10
-6
165
180
50
40
30
10
20
5
10
0
10
-2
2
6
Pin (dBm)
Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=900MHz
-14
-10
-6
60
Gain_4V
Pout_4V
PAE_4V
25
20
50
40
15
30
10
20
5
10
0
0
2
6
10
14
Pin (dBm)
Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 2 GHz
-10
-6
-2
Note:
Bias current for these charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
6
150
15
30
PAE (%)
GAIN (dB) & Pout (dBm)
25
20
0
60
Gain_5V
Pout_5V
PAE_5V
120
135
Ids (mA)
Gain_4V
Pout_4V
PAE_4V
25
40
15
-10
105
60
30
PAE (%)
GAIN (dB) & Pout (dBm)
20
90
Figure 14. Small Signal Gain vs. Ids and Vds at 5.8 GHz
60
Gain_3V
Pout_3V
PAE_3V
25
0
-14
0
75
180
PAE (%)
90
3V
4V
5V
2
GAIN (dB) & Pout (dBm)
20
75
4
PAE (%)
25
GAIN (dB) & Pout (dBm)
OIP3 (dBm)
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
15
30
10
20
5
-6
-2
2
Pin (dBm)
6
10
14
20
10
5
10
0
0
-10
50
40
15
30
10
20
5
10
0
-10
-6
-2
2
6
Pin (dBm)
10
14
18
0
20
50
40
14
18
30
10
20
5
10
-10
-6
-2
60
Gain_3V
Pout_3V
PAE_3V
25
20
50
40
10
5
10
0
0
5
10
15
20
20
2
6
Pin (dBm)
40
10
10
-2
20
50
30
30
-6
Figure 23. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=3.9 GHz
-6
-2
2
6
10
Pin (dBm)
14
18
22
0
Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=5.8 GHz
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
7
0
14
15
15
0
-10
10
60
30
PAE (%)
GAIN (dB) & Pout (dBm)
25
6
0
2
6
10
14
18
Pin (dBm)
Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=3.9 GHz
60
Gain_5V
Pout_5V
PAE_5V
2
Pin (dBm)
Gain_4V
Pout_4V
PAE_4V
25
0
Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq=3.9 GHz
30
-2
30
PAE (%)
GAIN (dB) & Pout (dBm)
20
-6
Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 2 GHz
60
Gain_3V
Pout_3V
PAE_3V
25
40
10
Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 2 GHz
30
20
50
30
GAIN (dB) & Pout (dBm)
-10
25
15
GAIN (dB) & Pout (dBm)
0
60
Gain_3V
Pout_3V
PAE_3V
PAE (%)
40
GAIN (dB) & Pout (dBm)
20
50
PAE (%)
GAIN (dB) & Pout (dBm)
25
30
PAE (%)
60
Gain_5V
Pout_5V
PAE_5V
PAE (%)
30
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
20
30
50
25
40
15
30
10
20
5
10
0
-6
-2
2
6
10
Pin (dBm)
14
18
20
Figure 25. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq=5.8 GHz
50
40
15
30
10
20
5
10
0
0
22
60
Gain_5V
Pout_5V
PAE_5V
-6
-2
2
6
10
Pin (dBm)
14
PAE (%)
GAIN (dB) & Pout (dBm)
25
60
GAIN (dB) & Pout (dBm)
Gain_4V
Pout_4V
PAE_4V
PAE (%)
30
0
22
18
Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq=5.8 GHz
ATF-53189 Typical Performance Curves, continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency
46
18
16
44
14
GAIN (dB)
OIP3 (dBm)
42
40
38
-40C
25C
80C
36
34
0.5
1.5
10
10
6
2.5
4
0.5
6.5
25
45
24
P1dB (dBm)
40
35
-40C
25C
80C
25
20
0.5
1.5
1.5
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 29. PAE vs. Temperature and Frequency at optimum OIP3
3.5
4.5
FREQUENCY (GHz)
6.5
22
-40C
25C
80C
6.5
20
0.5
1.5
2.5
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 30. P1dB vs. Temperature and Frequency at optimum OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
8
5.5
23
21
2.5
2.5
Figure 28. Gain vs. Temperature and Frequency at optimum OIP3
50
30
-40C
25C
80C
8
3.5
4.5
5.5
FREQUENCY (GHz)
Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3
PAE (%)
12
6.5
ATF-53189 Typical Performance Curves (at 25°C unless specified otherwie), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA
20
10
-2
Pin (dBm)
2
6
GAIN (dB) & Pout (dBm)
30
Gain_4V
Pout_4V
PAE_4V
25
20
30
30
20
5
10
-10
-6
-2
2
Pin (dBm)
6
10
30
Gain_3V
Pout_3V
PAE_3V
25
20
20
0
-10
-6
-2
2
Pin (dBm)
6
10
0
14
6
0
10
60
Gain_5V
Pout_5V
PAE_5V
50
40
20
5
10
25
10
2
30
50
5
-2
Pin (dBm)
10
30
10
-6
15
60
30
-10
20
0
0
14
40
15
10
25
10
0
20
5
60
15
30
10
50
40
40
15
0
-14
0
10
GAIN (dB) & Pout (dBm)
-6
GAIN (dB) & Pout (dBm)
-10
PAE (%)
-14
50
PAE (%)
10
20
-10
-6
-2
2
Pin (dBm)
6
10
14
0
60
Gain_3V
Pout_3V
PAE_3V
20
50
40
30
15
10
20
5
10
0
-10
PAE (%)
30
GAIN (dB) & Pout (dBm)
15
PAE (%)
40
5
GAIN (dB) & Pout (dBm)
25
50
PAE (%)
GAIN (dB) & Pout (dBm)
20
60
Gain_5V
Pout_5V
PAE_5V
-6
-2
2
6
Pin (dBm)
10
14
18
PAE (%)
Gain_4V
Pout_4V
PAE_4V
25
0
30
60
30
0
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
9
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 180 mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.776
0.798
0.818
0.832
0.835
0.84
0.842
0.843
0.844
0.847
0.847
0.847
0.843
0.841
0.851
0.862
0.882
0.903
0.939
0.956
0.94
0.948
0.942
0.92
0.959
0.952
0.943
0.956
0.959
0.918
S11
Ang.
-48.1
-84.7
-110.2
-128.2
-151.9
-160.3
-166.9
-172.2
-176.9
178.8
161.9
147.6
133.8
119.8
110
100.1
80.4
60.7
44
31.8
23.2
13.6
2.6
-4.3
-15.4
-20.1
-21
-24.2
-31.9
-43.5
dB
S21
Mag.
Ang.
32.2
30.7
29.0
27.3
24.8
23.4
22.2
21.1
20.2
19.3
16.0
13.7
11.9
10.6
9.6
8.6
6.2
2.7
0.2
-2.1
-4.6
-6.8
-8.7
-10.3
-12.3
-14.3
-15.5
-16.2
-16.0
-15.7
40.839
34.138
28.059
23.278
17.424
14.811
12.876
11.394
10.225
9.256
6.316
4.818
3.928
3.369
3.036
2.702
2.034
1.367
1.027
0.786
0.586
0.459
0.368
0.305
0.244
0.193
0.168
0.155
0.159
0.164
154.1
135.6
121.7
111.2
100.1
94.8
90.2
86.3
82.7
79.3
64.7
51.4
38.4
25.2
14.5
3.7
-17.9
-39.4
-59.4
-77.8
-94.2
-110
-126.9
-141.2
-161.1
-171.7
179.4
169.6
155.5
137.8
dB
S12
Mag.
Ang.
Mag.
-38.4
-34.0
-32.0
-31.4
-31.7
-31.7
-31.4
-31.4
-31.1
-31.1
-30.2
-29.4
-28.6
-28.0
-27.5
-27.3
-26.9
-26.4
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-35.4
-35.4
-35.9
-34.0
-31.4
-28.4
0.012
0.02
0.025
0.027
0.026
0.026
0.027
0.027
0.028
0.028
0.031
0.034
0.037
0.04
0.042
0.043
0.045
0.048
0.044
0.041
0.035
0.029
0.02
0.012
0.017
0.017
0.016
0.02
0.027
0.038
65.5
50.5
39.4
31.7
23.3
20.5
18.6
17.5
16.5
15.7
13.4
11
7.6
2.5
-2.4
-7.3
-17.2
-27
-37.6
-48.7
-61.5
-79
-117
-172.6
104.4
73.2
82.9
81.5
87
78.1
0.428
0.411
0.396
0.384
0.397
0.401
0.403
0.402
0.4
0.398
0.389
0.377
0.367
0.365
0.385
0.405
0.446
0.486
0.544
0.607
0.669
0.721
0.756
0.784
0.794
0.812
0.847
0.852
0.865
0.847
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
Rn/50
Ga
dB
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.65
0.76
0.79
0.86
0.94
1.00
1.10
1.17
1.41
1.53
1.56
1.72
1.87
2.03
2.18
0.394
0.417
0.423
0.465
0.509
0.545
0.600
0.645
0.777
0.840
0.855
0.920
0.970
0.993
0.997
0.11
0.09
0.08
0.08
0.06
0.08
0.16
0.28
0.35
0.41
0.42
0.51
0.97
1.88
2.54
25.82
21.83
21.71
18.70
17.63
16.45
14.90
13.53
11.35
10.31
10.38
9.79
7.91
6.11
4.56
163.6
172.4
175.3
-165.4
-147.7
-134.6
-116.7
-103.3
-70.0
-56.1
-52.9
-39.0
-27.5
-19.1
-7.5
S22
Ang.
MSG/MAG
dB
-39.3
-71.3
-94.8
-111.6
-146.6
-153.7
-159
-163.3
-166.8
-169.8
178.4
169.3
160.5
152.5
143.8
135.2
117.8
100.5
87.1
72.6
57.9
45.5
35.1
24.8
15.1
7.6
1.3
-2.9
-7.8
-14.7
35.3
32.3
30.5
29.4
28.3
27.6
26.8
26.3
25.6
25.2
23.1
21.5
18.9
17.0
16.3
15.5
13.5
10.8
10.5
10.0
6.7
6.1
4.8
2.3
3.7
0.8
-0.3
0.3
1.5
-2.0
40
MSG
30
MSG/MAG & |S21|2 (dB)
Freq.
GHz Mag.
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10
12
14
16 18
FREQUENCY (GHz)
Figure 36. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/180 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
10
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 135 mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.916
0.897
0.885
0.878
0.859
0.857
0.855
0.854
0.852
0.854
0.851
0.85
0.846
0.844
0.854
0.863
0.883
0.902
0.939
0.956
0.94
0.948
0.942
0.92
0.959
0.951
0.942
0.956
0.958
0.92
S11
Ang.
dB
S21
Mag.
-47.6
-83.9
-109.5
-127.5
-151.3
-159.9
-166.5
-171.9
-176.6
179.1
162.1
147.7
133.9
119.8
110
100.2
80.5
60.8
44.1
31.8
23.2
13.6
2.6
-4.2
-15.4
-20
-21.1
-24.2
-31.8
-43.5
32.6
30.9
29.1
27.4
24.8
23.3
22.1
21.0
20.1
19.2
15.8
13.5
11.7
10.4
9.4
8.4
5.9
2.3
0.0
-2.3
-4.8
-7.0
-8.9
-10.5
-12.4
-14.5
-15.7
-16.5
-16.2
-15.9
42.775
35.086
28.4
23.322
17.286
14.647
12.703
11.225
10.065
9.101
6.197
4.726
3.851
3.301
2.968
2.636
1.972
1.308
1.005
0.769
0.573
0.448
0.36
0.297
0.239
0.188
0.164
0.149
0.155
0.161
Ang.
152.6
133.4
119.5
109.2
98.2
93.1
88.7
84.9
81.5
78.2
63.9
50.7
37.7
24.6
13.9
3.1
-18.5
-40
-60
-78.3
-95
-110.5
-127.7
-141.8
-161.9
-172.9
178.7
167.8
154.1
136.9
dB
S12
Mag.
Ang.
Mag.
-37.7
-33.2
-31.4
-30.8
-31.4
-31.1
-31.1
-30.8
-30.8
-30.8
-29.9
-29.4
-28.4
-28.0
-27.7
-27.5
-26.9
-26.6
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.013
0.022
0.027
0.029
0.027
0.028
0.028
0.029
0.029
0.029
0.032
0.034
0.038
0.04
0.041
0.042
0.045
0.047
0.044
0.041
0.035
0.029
0.02
0.012
0.018
0.017
0.017
0.02
0.027
0.038
66.7
49.5
37.8
29.9
21.3
18.6
16.9
15.6
14.6
13.9
11.3
9
5.7
0.8
-4
-8.7
-18.1
-27.6
-38.6
-49.6
-62.1
-80
-118.6
-173.3
105
74
84.5
82.4
87.3
78.5
0.458
0.43
0.407
0.39
0.399
0.401
0.402
0.4
0.398
0.396
0.386
0.374
0.364
0.362
0.382
0.401
0.441
0.48
0.542
0.605
0.668
0.721
0.757
0.784
0.794
0.812
0.847
0.853
0.866
0.848
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
Rn/50
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.30
0.41
0.44
0.53
0.62
0.69
0.80
0.89
1.16
1.31
1.34
1.52
1.71
1.89
2.07
0.162
0.291
0.302
0.369
0.433
0.484
0.556
0.613
0.764
0.832
0.848
0.914
0.963
0.991
0.998
0.05
0.05
0.05
0.04
0.04
0.05
0.10
0.19
0.26
0.30
0.30
0.39
0.77
0.96
1.58
150.8
161.3
164.2
-174.2
-154.6
-140.2
-120.6
-106.1
-71.0
-56.6
-53.4
-39.3
-27.9
-18.2
-9.2
26.27
22.12
22.02
18.95
17.05
15.87
14.63
13.21
11.19
10.26
10.04
9.64
8.68
6.57
4.51
S22
Ang.
MSG/MAG
dB
-40.7
-73.3
-96.8
-113.4
-148.1
-155
-160.1
-164.3
-167.7
-170.6
178
169
160.4
152.4
143.7
135
117.6
100.2
87.3
72.8
58.1
45.6
35.2
24.8
15.1
7.7
1.4
-2.9
-7.8
-14.7
35.2
32.0
30.2
29.1
28.1
27.2
26.6
25.9
25.4
25.0
22.9
21.4
19.3
17.0
16.2
15.3
13.3
10.3
10.3
9.8
6.6
5.9
4.6
2.1
3.5
0.4
-0.6
0.0
1.2
-2.1
40
Ga
dB
MSG
30
MSG/MAG & |S21|2 (dB)
Freq.
GHz Mag.
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10
12
14
16 18
FREQUENCY (GHz)
Figure 37. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 75 mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.926
0.891
0.882
0.879
0.885
0.886
0.886
0.886
0.885
0.887
0.884
0.884
0.88
0.875
0.882
0.889
0.903
0.917
0.947
0.959
0.941
0.946
0.936
0.914
0.951
0.948
0.937
0.949
0.947
0.906
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
-80.9
-121.5
-142.5
-155.4
-169.7
-175.4
-180
176.1
172.5
169.3
155.1
142.1
129.1
115.5
106.2
96.8
78.1
59.4
43.5
31.7
23.4
14.1
3.1
-3.7
-14.9
-19.8
-21.1
-24.5
-32.9
-45.1
33.5
29.9
27.0
24.8
21.7
20.1
18.8
17.7
16.8
15.9
12.5
10.1
8.4
7.0
6.1
5.1
2.5
-1.1
-3.6
-6.0
-8.6
-10.7
-12.5
-14.2
-16.2
-18.3
-19.0
-19.7
-18.6
-17.8
47.17
31.192
22.457
17.36
12.12
10.145
8.743
7.695
6.883
6.209
4.212
3.21
2.618
2.246
2.018
1.791
1.337
0.882
0.658
0.501
0.37
0.292
0.236
0.194
0.154
0.121
0.112
0.104
0.118
0.129
135.8
114.3
102.7
94.8
88.9
85
81.6
78.4
75.3
72.4
58.8
45.7
32.5
18.9
8.1
-2.8
-24.5
-46.2
-65.5
-83.3
-98.9
-114.3
-131.4
-146
-166.9
-175.3
176.1
167.9
154.7
138.1
-35.9
-33.2
-32.0
-31.7
-32.8
-32.4
-32.4
-32.0
-31.7
-31.7
-30.5
-29.1
-28.0
-27.1
-26.7
-26.6
-26.0
-25.5
-26.2
-26.7
-28.4
-29.6
-33.2
-37.7
-37.7
-39.2
-40.9
-43.1
-37.7
-33.6
0.016
0.022
0.025
0.026
0.023
0.024
0.024
0.025
0.026
0.026
0.03
0.035
0.04
0.044
0.046
0.047
0.05
0.053
0.049
0.046
0.038
0.033
0.022
0.013
0.013
0.011
0.009
0.007
0.013
0.021
51.6
34.6
26.7
22.2
19.7
19
18.6
18.5
18.4
18.3
17.8
15.6
11.2
4.9
-1.1
-7.1
-19
-31
-42.2
-53.9
-65.8
-82.9
-116.4
-159.1
104.3
56.9
79.5
74.4
117.9
111.8
0.389
0.447
0.471
0.482
0.551
0.555
0.557
0.557
0.555
0.554
0.548
0.538
0.532
0.532
0.549
0.567
0.603
0.638
0.681
0.725
0.77
0.805
0.826
0.843
0.843
0.85
0.877
0.878
0.887
0.862
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
Rn/50
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.32
0.41
0.43
0.49
0.56
0.61
0.69
0.75
0.95
1.05
1.08
1.21
1.34
1.47
1.60
0.175
0.224
0.235
0.306
0.375
0.428
0.507
0.569
0.738
0.814
0.831
0.907
0.961
0.992
0.996
0.05
0.04
0.03
0.03
0.03
0.04
0.08
0.14
0.20
0.24
0.24
0.30
0.60
0.71
1.01
127.6
143.8
148.3
173.6
-163.6
-147.2
-125.3
-109.3
-72.0
-57.4
-54.2
-40.5
-29.3
-19.3
-8.9
26.45
21.98
21.50
18.55
16.33
15.18
13.86
12.68
10.81
10.64
9.97
9.25
7.78
6.96
4.46
S22
Ang.
MSG/MAG
dB
-96
-131.4
-147.6
-157
-172.5
-176
-178.8
178.7
176.5
174.4
165.1
156.3
147.4
139
130.5
122
105.1
88.1
75.1
61.6
48.2
36.9
27.2
17.2
8
1.2
-4.2
-8.2
-13.1
-21.1
34.7
31.5
29.5
28.2
27.2
26.3
25.6
24.9
24.2
23.8
21.5
19.2
16.2
14.4
13.8
13.0
11.1
8.2
7.9
7.2
4.0
3.3
1.7
-0.7
-0.3
-2.9
-3.5
-3.2
-1.6
-4.1
40
Ga
dB
MSG
30
MSG/MAG & |S21|2 (dB)
Freq.
GHz Mag.
20
MAG
10
0
S21
-10
-20
-30
0
2
4
6
8
10
12
14
16 18
FREQUENCY (GHz)
Figure 38. MSG/MAG & |S21|2 vs. and
Frequency at 4.0V/75 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
12
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 5.0V, IDS = 135 mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.903
0.889
0.879
0.874
0.857
0.856
0.854
0.853
0.852
0.854
0.852
0.851
0.846
0.844
0.854
0.864
0.883
0.903
0.939
0.957
0.941
0.948
0.941
0.919
0.958
0.951
0.942
0.956
0.957
0.917
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
-47.8
-84.2
-109.8
-127.8
-151.5
-160
-166.6
-172
-176.7
179.1
162
147.6
133.8
119.8
110
100.1
80.3
60.6
44
31.7
23
13.6
2.5
-4.4
-15.5
-20.1
-21.1
-24.2
-31.9
-43.6
32.5
30.8
28.9
27.2
24.6
23.2
22.0
20.9
19.9
19.1
15.7
13.4
11.6
10.3
9.3
8.3
5.9
2.4
-0.1
-2.4
-5.0
-7.1
-9.0
-10.8
-12.7
-14.8
-15.9
-16.7
-16.5
-16.1
42.048
34.523
27.96
22.97
17.06
14.454
12.541
11.079
9.935
8.984
6.117
4.662
3.798
3.257
2.934
2.611
1.965
1.319
0.989
0.756
0.562
0.441
0.353
0.29
0.231
0.183
0.16
0.147
0.149
0.156
152.7
133.5
119.5
109.2
98.2
93.1
88.7
84.9
81.4
78.1
63.7
50.4
37.4
24.2
13.4
2.5
-19.1
-40.8
-60.9
-79.4
-96.1
-112
-129.2
-143.9
-163.8
-174.6
175.9
166
152.8
134.6
-37.7
-33.2
-31.4
-30.8
-31.4
-31.1
-31.1
-30.8
-30.8
-30.5
-29.9
-29.4
-28.6
-28.0
-27.7
-27.5
-26.9
-26.6
-27.1
-27.7
-29.1
-30.8
-34.0
-38.4
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.013
0.022
0.027
0.029
0.027
0.028
0.028
0.029
0.029
0.03
0.032
0.034
0.037
0.04
0.041
0.042
0.045
0.047
0.044
0.041
0.035
0.029
0.02
0.012
0.018
0.017
0.017
0.02
0.027
0.038
66.6
49.3
37.6
29.8
21.2
18.5
16.7
15.4
14.3
13.6
11
8.7
5.3
0.6
-4.1
-8.8
-18.3
-27.7
-37.9
-49
-61.5
-79.3
-117.6
-172.8
105.3
74.4
84
81.8
87
77.6
0.466
0.432
0.404
0.385
0.388
0.389
0.39
0.388
0.386
0.383
0.373
0.361
0.352
0.35
0.371
0.392
0.433
0.475
0.536
0.601
0.666
0.72
0.757
0.785
0.796
0.814
0.849
0.855
0.868
0.851
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
Rn/50
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.36
0.46
0.49
0.59
0.69
0.77
0.88
0.98
1.28
1.44
1.48
1.68
1.88
2.08
2.28
0.266
0.315
0.327
0.388
0.448
0.495
0.563
0.617
0.764
0.830
0.845
0.912
0.960
0.988
0.994
0.05
0.04
0.04
0.04
0.04
0.06
0.12
0.21
0.31
0.37
0.38
0.42
0.84
1.24
1.78
149.9
162.4
165.6
-172.7
-153.0
-138.6
-116.3
-104.9
-70.5
-56.5
-53.4
-39.7
-28.3
-18.3
-8.5
26.51
22.79
22.09
18.92
17.04
15.87
14.50
13.11
11.19
10.10
10.08
9.39
8.78
8.05
4.74
S22
Ang.
MSG/MAG
dB
-39.6
-71.6
-94.7
-111.3
-146.6
-153.7
-158.9
-163.2
-166.6
-169.5
179.1
170.2
161.7
153.9
145.2
136.6
119.2
101.9
88.4
73.8
58.9
46.2
35.7
25.2
15.4
7.9
1.6
-2.7
-7.7
-14.6
35.1
32.0
30.2
29.0
28.0
27.1
26.5
25.8
25.3
24.8
22.8
21.4
18.8
16.8
16.1
15.3
13.3
10.5
10.2
9.8
6.5
5.8
4.4
1.9
3.1
0.2
-0.8
-0.2
0.7
-2.5
40
Ga
dB
MSG
30
MSG/MAG & |S21|2 (dB)
Freq.
GHz Mag.
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10
12
14
16 18
FREQUENCY (GHz)
Figure 39. MSG/MAG & |S21|2 vs. and
Frequency at 5.0V/135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
13
ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 135 mA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.925
0.904
0.889
0.882
0.861
0.859
0.856
0.855
0.853
0.855
0.851
0.851
0.845
0.843
0.853
0.862
0.882
0.901
0.938
0.955
0.938
0.946
0.94
0.92
0.958
0.952
0.943
0.955
0.958
0.918
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
-47.5
-83.8
-109.3
-127.4
-151.3
-159.8
-166.5
-171.8
-176.7
179.1
162.1
147.6
133.8
119.8
110
100.1
80.4
60.7
44.1
31.8
23.1
13.6
2.6
-4.2
-15.5
-20.1
-21.2
-24.2
-31.9
-43.5
32.6
30.9
29.1
27.4
24.7
23.3
22.0
21.0
20.0
19.1
15.8
13.5
11.7
10.4
9.5
8.4
6.0
2.5
0.1
-2.3
-4.8
-6.9
-8.8
-10.4
-12.4
-14.4
-15.5
-16.2
-16.0
-15.7
42.873
35.157
28.44
23.35
17.223
14.586
12.655
11.183
10.027
9.067
6.179
4.713
3.846
3.299
2.972
2.645
1.99
1.336
1.006
0.771
0.576
0.453
0.364
0.302
0.241
0.191
0.167
0.154
0.159
0.165
152.7
133.4
119.5
109.2
98.3
93.2
88.9
85.2
81.7
78.4
64.3
51.2
38.4
25.4
14.8
4.1
-17.1
-38.4
-58
-76
-92.2
-107.4
-124.6
-138.3
-157.7
-167.9
-177
173.2
159.5
141.4
-37.7
-33.2
-31.4
-30.5
-31.1
-31.1
-30.8
-30.8
-30.5
-30.5
-29.6
-29.1
-28.2
-27.5
-27.3
-27.1
-26.7
-26.4
-27.1
-27.7
-29.4
-30.8
-34.0
-37.7
-34.9
-35.4
-35.4
-34.0
-31.4
-28.4
0.013
0.022
0.027
0.03
0.028
0.028
0.029
0.029
0.03
0.03
0.033
0.035
0.039
0.042
0.043
0.044
0.046
0.048
0.044
0.041
0.034
0.029
0.02
0.013
0.018
0.017
0.017
0.02
0.027
0.038
66.6
49.4
37.7
29.8
21.4
18.7
17
15.7
14.8
14
11.4
8.9
5
-0.1
-5.1
-10.2
-20.2
-30.3
-40.8
-51.6
-64
-82
-121.6
-176.6
105.2
74.2
85.1
83.1
89
79.5
0.435
0.425
0.416
0.41
0.433
0.437
0.439
0.438
0.436
0.435
0.425
0.413
0.403
0.401
0.419
0.438
0.475
0.512
0.565
0.622
0.681
0.729
0.76
0.785
0.794
0.81
0.844
0.849
0.861
0.843
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
Rn/50
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.34
0.43
0.45
0.53
0.61
0.68
0.78
0.86
1.10
1.24
1.27
1.43
1.60
1.76
1.93
0.225
0.282
0.296
0.362
0.427
0.478
0.551
0.608
0.763
0.832
0.848
0.915
0.964
0.991
0.995
0.05
0.04
0.04
0.03
0.03
0.05
0.09
0.17
0.24
0.28
0.30
0.38
0.74
0.95
1.55
146.2
157.0
160.2
-177.0
-156.3
-141.3
-121.1
-106.2
-70.8
-56.6
-53.5
-39.7
-28.4
-18.5
-8.6
26.30
22.19
22.07
19.00
17.13
15.89
14.59
13.17
11.22
10.16
9.93
9.57
8.78
7.27
3.39
S22
Ang.
MSG/MAG
dB
-44
-78.6
-102.6
-119.1
-151.6
-158.2
-163
-167.1
-170.4
-173.3
175.3
166
157.1
148.8
140.2
131.6
114.3
97.1
84
70
55.7
43.6
33.5
23.3
13.8
6.6
0.5
-3.7
-8.5
-15.5
35.2
32.0
30.2
28.9
27.9
27.2
26.4
25.9
25.2
24.8
22.7
21.3
19.6
17.0
16.3
15.4
13.4
10.5
10.3
9.7
6.5
5.8
4.6
2.3
3.6
0.7
-0.3
0.1
1.5
-2.0
40
Ga
dB
MSG
30
MSG/MAG & |S21|2 (dB)
Freq.
GHz Mag.
20
MAG
10
S21
0
-10
-20
0
2
4
6
8
10
12
14
16 18
FREQUENCY (GHz)
Figure 40. MSG/MAG & |S21|2 vs. and
Frequency at 3.0V/135 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
14
Device Models, PCB Layout and Stencil Device
Refer to Avago’s Web Site: http://www.avagotech.com/pages/en/rf_microwave
Ordering Information
Part Number
No. of Devices
Container
ATF-53189-TR1
3000
13” Reel
ATF-53189-BLK
100
Anti-static bag
SOT89 Package Dimensions
D
D
D1
D1
E1
POLISH
E1
OR
E
L
L
e
e
S
S
e1
C
e1
1.625
D2
MATTE FINISH
HALF ETCHING
DEPTH 0.100
1.23
2.35
0.77
0.2
D1
E
b
b1
b
POLISH
1.24
E
A
OR
b1
Dimensions in mm
15
Dimensions in inches
Symbols
Minimum
Nominal
Maximum
Minimum
Nominal
A
1.40
1.50
1.60
0.055
0.059
Maximum
0.063
L
0.89
1.04
1.20
0.0350
0.041
0.047
0.018
b
0.36
0.42
0.48
0.014
0.016
b1
0.41
0.47
0.53
0.016
0.018
0.030
C
0.38
0.40
0.43
0.014
0.015
0.017
D
4.40
4.50
4.60
0.173
0.177
0.181
D1
1.40
1.60
1.75
0.055
0.062
0.069
D2
1.45
1.65
1.80
0.055
0.062
0.069
E
3.94
-
4.25
0.155
-
0.167
E1
2.40
2.50
2.60
0.094
0.098
0.102
e1
2.90
3.00
3.10
0.114
0.118
0.122
S
0.65
0.75
0.85
0.026
0.030
0.034
e
1.40
1.50
1.60
0.054
0.059
0.063
Device Orientation
USER FEED
DIRECTION
3GX
3GX
3GX
CARRIER
TAPE
3GX
REEL
COVER TAPE
Tape Dimensions
Ø 1.5 +0.1/-0.0
8.00
0.30 ± .05
Ø 1.50 MIN.
2.00 ± .05 SEE NOTE 3
4.00 SEE NOTE 1
A
R 0.3 MAX.
1.75 ± .10
5.50 ± .05
SEE NOTE 3
Bo
12.0 ± .3
Ko
SECTION A - A
16
Ao
Ao = 4.60
Bo = 4.90
Ko = 1.90
R 0.3 TYP.
A
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE ±0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
Reel Dimensions – 13” Reel
R
LOKREEL
R
MINNEAPOLIS USA
U.S PAT 4726534
102.0
REF
1.5
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
88 REF
330.0
REF
"A"
96.5
6
PS
Detail "B"
6
PS
Detail "A"
+0.3
(MEASURED AT HUB)
8.4 - 0.2
(MEASURED AT HUB)
11.1 MAX.
Ø 20.2
Dimensions in mm
M IN
+0.5
Ø 13.0 -0.2
2.0 ± 0.5
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes 5989-3893EN
AV02-0051EN - May 23, 2013
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