ATF-58143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF-58143 is a high dynamic range, low noise E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Low noise and high linearity performance The combination of high gain, high linearity and low noise makes the ATF-58143 ideal as low noise amplifier for cellular/PCS/WCDMA base stations, wireless local loop, and other applications that require low noise and high linearity performance in the 450 MHz to 6 GHz frequency range. Low cost surface mount small plastic package SOT343 (4 lead SC-70) in Tape-and-Reel packaging option available Surface Mount Package SOT-343 2 GHz; 3V, 30 mA (Typ.) Enhancement Mode Technology[1] Excellent uniformity in product specifications Lead-free option available Specifications 30.5 dBm output 3rd order intercept 19 dBm output power at 1 dB 0.5 dB noise figure 16.5 dB associated gain Applications DRAIN SOURCE 8Fx Pin Connections and Package Marking SOURCE Q1 LNA for cellular/PCS/WCDMA base stations Q1, Q2 LNA and Pre-driver amplifier for 3–4 GHz WLL Other low noise and high linearity applications at 450 MHz to 6 GHz Note: GATE 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Note: Top View. Package marking provides orientation and identification “8F” = Device Code “x” = Date code character identifies month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Technologies Application Note A004R: Electrostatic Discharge Damage and Control. ATF-58143 Absolute Maximum Ratings [1] Symbol Parameter Units AbsoluteMaximum VDS Drain-SourceVoltage[2] V 5 VGS Gate-SourceVoltage[2] V -5to1 VGD GateDrainVoltage[2] V -5to1 mA 100 DrainCurrent IDS [2] [3] Pdiss TotalPowerDissipation mW 500 Pinmax. RF InputPower (Vds=3V , Ids =30mA) (Vds=0V, Ids=0mA) (Vds=4V, Ids=30mA) dBm dBm dBm +20 +20 +20 IGS GateSourceCurrent mA 2[5] TCH ChannelTemperature °C 150 TSTG StorageTemperature °C -65to150 °C/W 162 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. The device can handle +13 dBm RF Input Power provided IGS is limited to 2 mA. IGS at P1dB drive level is bias circuit dependent. See applications section for additional information. 120 0.7V 100 0.6V 80 IDS (mA) ThermalResistance θjc [4] 60 0.5V 40 20 0.4V 0.3V 0 0 1 2 3 4 5 6 7 VDS (V) Figure 1. Typical I-V Curves (VGS=0.1V per step) Product Consistency Distribution Charts [6, 7] -150 Cpk=2.735 Stdev=0.049 Cpk=1.953 Stdev=0.2610 -125 Cpk=1.036 Stdev=0.509 -100 -75 -50 -25 0 0.3 0.4 0.5 0.6 NF (dB) Figure 2. NF @ 3V, 30 mA. USL = 0.9, Nominal = 0.5 0.7 0.8 15 16 17 18 GAIN (dB) Figure 3. Gain @ 3V, 30 mA. USL = 18.5, LSL = 15, Nominal = 16.5 28 29 30 31 32 33 34 OIP3 (dBm) Figure 4. OIP3 @ 3V, 30 mA. LSL = 29, Nominal = 30.5 Notes: 6. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 ATF-58143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Units Min. Typ.[2] Max. Vds = 3V, Ids = 30 mA V 0.4 0.51 0.75 Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52 Idss Saturated Drain Current Vds = 3V, Vgs = 0V μA — 1 5 Gm Transconductance Vds = 3V, gm = Idss/Vgs; Vgs = 0.75 – 0.7 = 0.05V mmho 230 410 560 Igss Gate Leakage Current Vgd = Vgs = -3V μA — — 200 f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 30 mA Vds = 3V, Ids = 30 mA Vds = 4V, Ids = 30 mA Vds = 4V, Ids = 30 mA dB dB dB dB — — — — 0.5 0.3 0.5 0.3 0.9 — — — Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth [1] NF Noise Figure Ga Associated Gain[1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 30 mA Vds = 3V, Ids = 30 mA Vds = 4V, Ids = 30 mA Vds = 4V, Ids = 30 mA dB dB dB dB 15 — — — 16.5 23.1 17.7 22.5 18.5 — — — OIP3 Output 3rd Order Intercept Point[1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 30 mA Vds = 3V, Ids = 30 mA Vds = 4V, Ids = 30 mA Vds = 4V, Ids = 30 mA dBm dBm dBm dBm 29 — — — 30.5 28.6 31.5 31.0 — — — — P1dB 1dB Compressed Output Power[1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 30 mA Vds = 3V, Ids = 30 mA Vds = 4V, Ids = 30 mA Vds = 4V, Ids = 30 mA dBm dBm dBm dBm — — — — 19 18 21 19 — — — — Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values determined from a sample size of 500 parts from 3 wafers. 28.2 + j9.4 RFin input matching 51 – j3.3 output matching RFout 0.7 dB loss 0.6 dB loss Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. 3 C2 L1 C5 A J2 C1 C2 C3 C4 C5 R1 L1 J1 J2 J3 J4 ATF-58143 S C4 AVAGO TECHNOLOGIES C3 S J1 : 2.7 pF Cap (0603) : 1 pF Cap (0603) : 1200 pF Cap (0603) : 120 pF Cap (0402) : 1200 pF Cap (0603) : 49.9 Ohm (0603) : 56 nH (0603) : 0 Ohm, Jumper (0805) : 0 Ohm, Jumper (0805) : 0 Ohm, Jumper (0402) : 0 Ohm, Jumper (0402) G C1 R1 Figure 6. Close-up of Production Test Board. ATF-58143 Typical Performance Curves 0.7 0.8 19 0.7 18 0.6 0.5 0.4 17 0.5 GAIN (dB) Fmin (dB) Fmin (dB) 0.6 0.4 14 0.2 3V 4V 0 10 20 30 40 50 60 13 3V 4V 0.1 0.2 3V 4V 12 0 70 0 10 20 Ids (mA) 30 40 50 60 0 70 10 20 42 24 37 22 21 50 60 70 40 35 32 OIP3 (dBm) OIP3 (dBm) 23 40 Figure 9. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. Figure 8. Fmin vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz. 25 30 Ids (mA) Ids (mA) Figure 7. Fmin vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. GAIN (dB) 15 0.3 0.3 27 30 25 22 20 19 0 10 20 30 40 50 60 20 17 3V 4V 18 70 Ids (mA) Figure 10. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz. 4 16 12 3V 4V 3V 4V 15 0 10 20 30 40 50 60 70 Ids (mA) Figure 11. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. 0 10 20 30 40 50 60 Ids (mA) Figure 12. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz. 70 ATF-58143 Typical Performance Curves, continued 24 23 1.5 22 22 P1dB (dBm) 18 1.0 20 Fmin (dB) P1dB (dBm) 21 20 19 18 16 0.5 17 14 12 3V 4V 25°C -40°C 85°C 3V 4V 16 15 0 10 20 30 40 50 60 70 0 10 20 30 Idq (mA) 40 50 60 0 70 0 1 Idq (mA) Figure 13. P1dB vs. Idq and Vds Tuned for [1] Max OIP3 and Fmin at 2 GHz. Figure 14. P1dB vs. Idq and Vds Tuned for [1] Max OIP3 and Fmin at 900 MHz. 30 35 25 30 2 3 4 5 6 FREQUENCY (GHz) Figure 15. Fmin vs. Frequency and Temp. Tuned for Max OIP3 and Fmin at 3V, 30 mA. 20.0 20 15 20 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 16. Gain vs. Frequency and Temp. Tuned for Max OIP3 and Fmin at 3V, 30 mA. Note: 1. When plotting P1dB, the drain current was allowed to vary dependent on the RF input power. 18.5 18.0 17.5 17.0 25°C -40°C 85°C 25°C -40°C 85°C 16.5 10 5 5 25 15 25°C -40°C 85°C 10 P1dB (dBm) 19.0 OPI3 (dBm) GAIN (dB) 19.5 16.0 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 17. OIP3 vs. Frequency and Temp. Tuned for Max OIP3 and Fmin at 3V, 30 mA. 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 18. P1dB vs. Frequency and Temp. Tuned for Max OIP3 and Fmin at 3V, 30 mA. ATF-58143 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA Freq. GHz Mag. 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.98 0.81 0.75 0.73 0.69 0.66 0.65 0.63 0.61 0.61 0.62 0.64 0.66 0.68 0.69 0.71 0.74 0.78 0.84 0.87 0.89 0.90 0.93 0.96 0.94 0.96 0.93 S11 Ang. -17.1 -92.0 -126.4 -132.2 -153.2 -165.9 -169.3 176.3 160.7 147.4 133.8 123.7 112.5 103.7 93.0 77.2 58.3 39.7 25.1 10.2 -3.9 -20.0 -31.4 -43.9 -54.2 -65.1 -79.8 dB Mag. S21 Ang. dB Mag. S12 Ang. S22 Mag. Ang. 27.29 25.25 21.87 21.18 18.38 16.74 16.40 14.83 13.51 12.35 11.28 10.32 9.41 8.61 7.84 6.47 5.14 3.77 2.55 1.25 0.19 -1.09 -2.53 -4.00 -5.46 -7.14 -8.81 23.14 18.31 12.40 11.46 8.31 6.88 6.61 5.51 4.74 4.15 3.66 3.28 2.96 2.70 2.47 2.11 1.81 1.54 1.34 1.16 1.02 0.88 0.75 0.63 0.53 0.44 0.36 168.7 123.7 103.4 99.8 85.1 75.4 73.1 61.9 50.9 40.4 30.2 20.5 11.1 2.1 -7.3 -24.8 -43.1 -60.7 -78.8 -97.1 -114.0 -132.2 -148.3 -162.8 -176.5 168.6 153.8 -40.10 -28.10 -26.12 -25.87 -24.70 -23.86 -23.65 -22.71 -21.87 -21.10 -20.45 -19.86 -19.39 -18.87 -18.44 -17.63 -17.13 -16.67 -16.21 -16.04 -15.72 -15.86 -16.22 -16.73 -17.15 -17.68 -18.36 0.010 0.039 0.049 0.051 0.058 0.064 0.066 0.073 0.081 0.088 0.095 0.102 0.107 0.114 0.120 0.131 0.139 0.147 0.155 0.158 0.164 0.161 0.154 0.146 0.139 0.131 0.121 80.8 45.7 34.8 33.4 29.4 27.4 26.9 24.4 21.1 17.7 13.5 9.3 4.9 0.7 -4.4 -14.6 -26.1 -37.0 -50.2 -64.2 -78.3 -93.6 -106.5 -118.2 -128.6 -142.4 -155.6 0.67 0.42 0.32 0.31 0.25 0.23 0.22 0.19 0.17 0.15 0.13 0.13 0.13 0.14 0.14 0.17 0.19 0.24 0.34 0.41 0.46 0.52 0.58 0.66 0.72 0.74 0.77 -12.1 -46.6 -66.7 -72.3 -90.8 -103.6 -106.0 -118.1 -133.3 -145.4 -155.7 -175.4 166.2 152.8 140.7 120.7 95.4 70.1 52.4 37.3 21.5 2.5 -14.1 -26.0 -36.3 -49.0 -64.8 MSG/MAG dB 33.69 26.68 23.99 23.52 21.54 20.30 20.03 18.77 17.69 16.73 15.86 15.09 14.40 13.74 13.14 12.06 11.14 10.22 9.39 8.65 7.96 7.39 6.85 6.36 5.85 5.27 4.77 Typical Noise Parameters, VDS = 3V, IDS = 30 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 0.12 0.18 0.20 0.32 0.43 0.45 0.51 0.58 0.75 0.87 1.01 1.04 0.39 0.37 0.36 0.32 0.30 0.30 0.29 0.31 0.35 0.42 0.50 0.53 17.775 46.9 53.525 80 101 107.7 125.2 154.475 -156.95 -120.93 -100.83 -97.15 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.06 0.09 0.15 0.18 25.33 22.26 21.54 19.16 17.65 17.33 16.23 14.77 13.39 11.92 11.07 10.93 40 35 MSG/MAG and S21 (dB) Freq GHz 30 25 20 15 MSG 10 5 S21 0 -5 -10 -15 0 5 10 15 20 FREQUENCY (GHz) Figure 19. MSG/MAG and S21 vs. Frequency at 3V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 6 ATF-58143 Typical Scattering Parameters, VDS = 4V, IDS = 30 mA Freq. GHz Mag. 0.1 0.5 0.9 1 1.5 1.9 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.99 0.83 0.76 0.75 0.72 0.71 0.70 0.69 0.68 0.67 0.69 0.73 0.76 0.79 0.82 0.85 0.87 0.89 0.91 0.93 0.94 0.94 0.92 0.91 S11 Ang. -16.3 -94.5 -133.1 -139.7 -162.2 -172.7 -174.9 173.5 161.6 141.9 123.1 108.9 96.3 82.4 71.2 60.1 47.2 36.2 26.6 17.2 9.2 1.2 -10.5 17.6 dB Mag. S21 Ang. dB Mag. S12 Ang. S22 Mag. Ang. MSG/MAG dB 28.16 25.82 22.52 21.83 18.94 17.18 16.79 14.67 13.05 11.00 9.29 7.73 6.16 4.74 3.63 2.63 1.52 0.38 -0.80 -2.01 -3.24 -4.43 -5.79 -6.74 25.6 19.5 13.4 12.3 8.9 7.2 6.9 5.4 4.5 3.5 2.9 2.4 2.0 1.7 1.5 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.5 169.65 125.68 104.58 100.73 85.42 75.68 73.47 59.58 46.88 28.55 10.32 -7.48 -23.78 -39.33 -55.93 -73.30 -90.53 -106.67 -121.58 -135.15 -148.98 -164.25 -59.55 170.70 -41.08 -28.95 -27.00 -26.74 -25.79 -25.25 -25.09 -24.15 -23.33 -22.14 -21.13 -20.28 -19.80 -19.32 -18.49 -17.74 -17.31 -17.12 -17.09 -17.15 -17.22 -17.36 -17.68 -17.94 0.01 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.12 0.13 0.14 0.14 0.14 0.14 0.14 0.14 0.13 0.13 81.1 46.2 33.9 32.0 26.9 24.8 24.4 21.7 19.0 14.1 7.3 -1.3 -9.7 -16.9 -26.7 -39.3 -52.2 -64.5 -75.2 -84.2 -94.3 -106.1 -119.3 -127.5 0.65 0.45 0.33 0.31 0.24 0.21 0.21 0.18 0.16 0.13 0.12 0.13 0.17 0.20 0.25 0.31 0.38 0.44 0.49 0.54 0.59 0.64 0.68 0.69 -10.17 -54.83 -76.45 -80.28 -95.17 -104.27 -106.18 -117.35 -124.85 -137.33 -42.65 158.73 125.87 104.88 83.12 61.03 41.33 22.65 6.28 -7.48 -22.78 -39.22 -53.35 -71.73 34.62 27.39 24.76 24.29 22.37 21.21 20.94 19.41 18.19 16.57 15.21 14.00 12.98 12.03 11.06 10.19 9.42 8.75 8.15 7.57 6.99 6.46 5.94 5.60 Typical Noise Parameters, VDS = 4V, IDS = 30 mA Fmin dB Γopt Mag. Γopt Ang. Rn/50 Ga dB 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 0.14 0.23 0.25 0.35 0.47 0.49 0.55 0.61 0.78 0.91 1.05 1.11 0.38 0.36 0.35 0.32 0.3 0.3 0.28 0.3 0.35 0.42 0.49 0.53 9.7 44.4 54.0 78.7 100.7 105.4 124.0 153.9 -157.2 -120.8 -101.2 -97.4 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.07 0.1 0.16 0.19 24.85 22.21 21.51 19.21 17.71 17.39 16.25 14.86 13.51 12.05 11.14 11.14 40 35 MSG/MAG and S21 (dB) Freq GHz 30 25 20 15 MSG 10 5 S21 0 -5 -10 0 5 10 15 20 FREQUENCY (GHz) Figure 20. MSG/MAG and S21 vs. Frequency at 4V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 7 Ordering Information Part Number No. of Devices Container ATF-58143-TR1G 3000 7” Reel ATF-58143-TR2G 10000 13”Reel ATF-58143-BLKG 100 antistatic bag Package Dimensions Outline 43 (SOT-343/SC70 4 lead) Recommended PCB Pad Layout for Avago's SC70 4L/SOT-343 Products 1.30 (.051) BSC 1.30 (0.051) 1.00 (0.039) HE E 2.00 (0.079) 0.60 (0.024) 1.15 (.045) BSC b1 0.9 (0.035) D 1.15 (0.045) Dimensions in A2 A A1 b L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L 8 MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. mm (inches) Device Orientation REEL 4 mm 8 mm 8Fx CARRIER TAPE 8Fx USER FEED DIRECTION 8Fx 8Fx TOP VIEW END VIEW COVER TAPE Tape Dimensions For Outline 4T P P2 D Po E F W C D1 t1 (CARRIER TAPE THICKNESS) Ko 10 MAX. Ao DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) Tt (COVER TAPE THICKNESS) 10 MAX. Bo SYMBOL SIZE (mm) SIZE (INCHES) Ao Bo Ko P D1 D Po E 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 W t1 C Tt F 8.00 + 0.30 - 0.10 0.254 0.02 0.315 + 0.012 0.0100 ± 0.0008 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 3.50 ± 0.05 0.138 ± 0.002 2.00 ± 0.05 0.079 ± 0.002 P2 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3749EN AV02-0672EN - June 8, 2012