Ordering number : ENA1603A ATP107 P-Channel Power MOSFET http://onsemi.com –40V, –50A, 17mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --40 V ±20 V --50 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 80 mJ --25 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --150 A 50 W °C Note : *1 VDD=--10V, L=200μH, IAV=--25A *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP107-TL-H 1.5 6.5 Marking ATP107 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/N1109PA TKIM TC-00002146 No. A1603-1/7 ATP107 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V Ratings min typ Unit max --40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--25A RDS(on)1 ID=--25A, VGS=--10V 13 17 mΩ RDS(on)2 ID=--13A, VGS=--4.5V 18.5 26 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.5 --1 μA ±10 μA --2.6 40 V S 2400 pF 330 pF Crss 240 pF Turn-ON Delay Time td(on) 17 ns Rise Time tr 260 ns Turn-OFF Delay Time td(off) 190 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--50A 160 ns 47 nC 11.5 nC 8 IS=--50A, VGS=0V --1.02 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --25A RL=0.8Ω VIN D PW=10μs D.C.≤1% VOUT G ATP107 P.G 50Ω S Ordering Information Device ATP107-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1603-2/7 ATP107 --4.0V --30 --25 --20 VGS= --3.5V --15 --30 --20 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C Single pulse 35 ID= --13A 30 --25A 25 20 15 10 5 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 °C 25 C 5° = °C Tc 75 --2 10 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A tf 100 7 5 tr 3 td(on) 2 10 7 --0.1 2 3 5 7 --1.0 2 3 C Tc= 7 25° 13A 25 = -, ID 4.5V = -VGS 20 5A = --2 0V, I D 1 = VGS 15 10 5 --40 --20 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 2 --100 VGS=0V 7 Single pulse 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 IS -- VSD --0.6 --0.8 --1.0 --1.2 Ciss, Coss, Crss -- VDS 7 160 IT15171 Diode Forward Voltage, VSD -- V --1.4 IT15173 f=1MHz 5 Ciss, Coss, Crss -- pF td(off) 2 --6 IT15169 30 3 3 --5 35 IT15172 1000 7 5 --4 Single pulse 0 --60 VDD= --20V VGS= --10V 2 Switching Time, SW Time -- ns 5 7 --100 --3 RDS(on) -- Tc 40 SW Time -- ID 3 --2 Gate-to-Source Voltage, VGS -- V --16 VDS= --10V Single pulse 2 --1 IT15170 | yfs | -- ID 3 0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 0 --1.0 IT15168 RDS(on) -- VGS 40 --0.9 --25° C --0.3 25°C --0.2 5°C --0.1 Tc= 7 0 C --40 --10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 75° --50 --10 --5 25° C --60 5°C .0 V --35 --70 5V --4. Tc= --25 °C 0V . --6 VDS= --10V Single pulse °C V .0 --8 --1 6 Drain Current, ID -- A --40 ID -- VGS --80 Drain Current, ID -- A --45 --1 0.0 V Tc=25°C Single pulse --25 ID -- VDS --50 Ciss 2 1000 7 5 Coss Crss 3 2 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15174 100 0 --5 --10 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V --40 IT15175 No. A1603-3/7 ATP107 VGS -- Qg --10 --100 7 5 --6 --4 --3 --10 7 5 --1 3 2 0 5 10 15 20 25 30 35 40 PD -- Tc 50 30 20 10 0 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15178 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15177 EAS -- Ta 120 40 0 2 IT15176 50 0μ s Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % 60 45 Operation in this area is limited by RDS(on). 3 2 --1.0 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 --2 0 ID= --50A 10 μs op --5 10 s s 0m 1m s m 10 n io at er --7 PW≤10μs 10 Drain Current, ID -- A --8 IDP= --150A C D Gate-to-Source Voltage, VGS -- V --9 ASO 3 2 VDS= --20V ID= --50A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1603-4/7 ATP107 Taping Specification ATP107-TL-H No. A1603-5/7 ATP107 Outline Drawing ATP107-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1603-6/7 ATP107 Note on usage : Since the ATP107 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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