ATP107 Ordering number : ENA1603A SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --40 V ±20 V --50 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 80 mJ --25 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --150 A 50 W °C Note : *1 VDD=--10V, L=200μH, IAV=--25A *2 L≤200μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP107-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP107 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 1.7 4,2 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/N1109PA TKIM TC-00002146 No.A1603-1/7 ATP107 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V Ratings min typ Unit max --40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--25A RDS(on)1 ID=--25A, VGS=--10V 13 17 mΩ RDS(on)2 ID=--13A, VGS=--4.5V 18.5 26 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.5 --1 μA ±10 μA --2.6 40 V S 2400 pF 330 pF Crss 240 pF Turn-ON Delay Time td(on) 17 ns Rise Time tr 260 ns Turn-OFF Delay Time td(off) 190 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--50A 160 ns 47 nC 11.5 nC 8 IS=--50A, VGS=0V --1.02 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --25A RL=0.8Ω VIN D PW=10μs D.C.≤1% VOUT G ATP107 P.G 50Ω S Ordering Information Device ATP107-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1603-2/7 ATP107 --4.0V --30 --25 --20 VGS= --3.5V --15 --30 --20 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C Single pulse 35 ID= --13A 30 --25A 25 20 15 10 5 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 °C 25 C 5° = °C Tc 75 --2 10 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A tf 100 7 5 tr 3 td(on) 2 10 7 --0.1 2 3 5 7 --1.0 2 3 C Tc= 7 25° 13A 25 = -, ID 4.5V = -VGS 20 5A = --2 0V, I D 1 = VGS 15 10 5 --40 --20 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 2 --100 VGS=0V 7 Single pulse 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 IS -- VSD --0.6 --0.8 --1.0 --1.2 Ciss, Coss, Crss -- VDS 7 160 IT15171 Diode Forward Voltage, VSD -- V --1.4 IT15173 f=1MHz 5 Ciss, Coss, Crss -- pF td(off) 2 --6 IT15169 30 3 3 --5 35 IT15172 1000 7 5 --4 Single pulse 0 --60 VDD= --20V VGS= --10V 2 Switching Time, SW Time -- ns 5 7 --100 --3 RDS(on) -- Tc 40 SW Time -- ID 3 --2 Gate-to-Source Voltage, VGS -- V --16 VDS= --10V Single pulse 2 --1 IT15170 | yfs | -- ID 3 0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 0 --1.0 IT15168 RDS(on) -- VGS 40 --0.9 --25° C --0.3 25°C --0.2 5°C --0.1 Tc= 7 0 C --40 --10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 75° --50 --10 --5 25° C --60 5°C .0 V --35 --70 5V --4. Tc= --25 °C 0V . --6 VDS= --10V Single pulse °C V .0 --8 --1 6 Drain Current, ID -- A --40 ID -- VGS --80 Drain Current, ID -- A --45 --1 0.0 V Tc=25°C Single pulse --25 ID -- VDS --50 Ciss 2 1000 7 5 Coss Crss 3 2 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15174 100 0 --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V --35 --40 IT15175 No.A1603-3/7 ATP107 VGS -- Qg --10 --100 7 5 --6 --4 --3 --10 7 5 --1 3 2 0 5 10 15 20 25 30 35 40 PD -- Tc 50 30 20 10 0 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15178 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15177 EAS -- Ta 120 40 0 2 IT15176 50 0μ s Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % 60 45 Operation in this area is limited by RDS(on). 3 2 --1.0 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 --2 0 ID= --50A 10 μs op --5 10 s s 0m 1m s m 10 n io at er --7 PW≤10μs 10 Drain Current, ID -- A --8 IDP= --150A C D Gate-to-Source Voltage, VGS -- V --9 ASO 3 2 VDS= --20V ID= --50A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No.A1603-4/7 ATP107 Taping Specification ATP107-TL-H No.A1603-5/7 ATP107 Outline Drawing ATP107-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1603-6/7 ATP107 Note on usage : Since the ATP107 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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