ON ATP202 N-channel power mosfet Datasheet

Ordering number : ENA1317A
ATP202
N-Channel Power MOSFET
http://onsemi.com
30V, 50A, 12mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
30
PW≤10μs, duty cycle≤1%
V
50
A
150
A
40
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
45
mJ
25
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=10V, L=100μH, IAV=25A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP202-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP202
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/91708PA TIIM TC-00001568 No. A1317-1/7
ATP202
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=13A, VGS=4.5V
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
Ratings
min
typ
Unit
max
30
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=25A
ID=25A, VGS=10V
Input Capacitance
Rise Time
Conditions
V
1.2
10
1
μA
±10
μA
2.6
17
V
S
9
12
mΩ
14
20
mΩ
1650
pF
285
pF
Crss
160
pF
td(on)
tr
16
ns
185
ns
93
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=50A
93
ns
27
nC
7.5
nC
4
IS=50A, VGS=0V
0.97
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=15V
VIN
ID=25A
RL=0.6Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP202
P.G
50Ω
S
Ordering Information
Device
ATP202-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1317-2/7
ATP202
10
1.0
1.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25
ID=13A
25A
15
10
5
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
=
Tc
5
C
5°
--2
75
°C
3
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
Drain Current, ID -- A
25°
C
4.5
A
=13
V, I D
=4.5
VGS
15
=25A
V, I D
10.0
S=
VG
10
5
--40
--20
0
20
40
60
80
100
120
140
160
IT14015
IS -- VSD
VGS=0V
Single pulse
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14017
Ciss, Coss, Crss -- VDS
5
VDD=15V
VGS=10V
5.0
IT14013
Diode Forward Voltage, VSD -- V
f=1MHz
3
2
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
4.0
20
IT14016
SW Time -- ID
7
3.5
25
0.01
7
5
3
2
0.001
7
2
3.0
Single pulse
100
7
5
3
2
1.0
5
0.1
2.5
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
C
25°
2.0
RDS(on) -- Tc
0
--60
16
2
7
1.5
Gate-to-Source Voltage, VGS -- V
VDS=10V
3
10
1.0
IT14014
| yfs | -- ID
5
0.5
30
Tc=25°C
Single pulse
0
0
0
IT14012
RDS(on) -- VGS
20
0
2.0
Tc=
75°C
25°C
--25°
C
0.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
30
3
20
10
Drain-to-Source Voltage, VDS -- V
5
5°C
20
30
°C
VGS=3.5V
40
--25
30
50
Tc=
7
4.0V
40
0
--25
°C
75°
C
Tc=
60
25
°C
50
VDS=10V
4.5V
16.0
Drain Current, ID -- A
60
ID -- VGS
70
Drain Current, ID -- A
V 10
.0V
Tc=25°C
8 .0
V
6.
0V
ID -- VDS
70
td(off)
100
7
tf
5
3
tr
2
td(on)
Ciss
1000
7
5
3
Coss
2
Crss
10
7
5
0.1
100
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7
IT14018
7
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14019
No. A1317-3/7
ATP202
VGS -- Qg
10
VDS=15V
ID=50A
7
6
5
4
3
3
2
5
10
15
20
25
Total Gate Charge, Qg -- nC
PD -- Tc
35
30
25
20
15
10
5
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14022
D
C
op
er
at
io
n
Tc=25°C
Single pulse
2
3
5
7 1.0
2
3
5
7 10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT14021
EAS -- Ta
120
40
0
Operation in
this area is
limited by RDS(on).
IT14020
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
45
1m
s
m
s
10
0.1
0.1
30
10
s
3
2
1
PW≤10μs
10
μs
10
0μ
s
0m
10
7
5
2
0
ID=50A
3
2
1.0
7
5
0
IDP=150A
100
7
5
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14011
No. A1317-4/7
ATP202
Taping Specification
ATP202-TL-H
No. A1317-5/7
ATP202
Outline Drawing
ATP202-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1317-6/7
ATP202
Note on usage : Since the ATP202 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1317-7/7
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