ATP204 Ordering number : ENA1551 SANYO Semiconductors DATA SHEET ATP204 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4.5V drive. Large current. Slim package. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 100 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Tc=25°C Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 235 mJ 50 A Avalanche Current *2 V 300 A 60 W 150 °C Note : *1 VDD=15V, L=100μH, IAV=50A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=30V, VGS=0V VGS=±16V, VDS=0V Marking : ATP204 Ratings min typ Unit max 30 V 1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 91609PA TK IM TC-00002081 No. A1551-1/4 ATP204 Continued from preceding page. Parameter Symbol Conditions Ratings min typ 1.2 2.6 V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 4600 Output Capacitance 700 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 390 pF Turn-ON Delay Time td(on) See specified Test Circuit. 40 ns Rise Time tr See specified Test Circuit. 690 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 205 ns Fall Time tf Qg See specified Test Circuit. 110 ns VDS=15V, VGS=10V, ID=100A 70 nC VDS=15V, VGS=10V, ID=100A VDS=15V, VGS=10V, ID=100A IS=100A, VGS=0V 22 nC 9.2 Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V Unit max 100 ID=25A, VGS=4.5V S 4.3 5.6 mΩ 6.5 9.1 mΩ 1.03 nC 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 0.55 0.7 3 0.8 4.6 0.5 7.3 0.5 1.7 2 1 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 10V 0V VDD=15V VIN ID=50A RL=0.3Ω VIN D PW=10μs D.C.≤1% VOUT G ATP204 P.G 50Ω S No. A1551-2/4 ATP204 6 .0 120 4.0V 50 40 30 VGS=3.5V 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 40 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tc=25°C Single pulse 12 ID=25A 10 50A 8 6 4 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 25 3 C 5° --2 = °C Tc 75 2 10 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 25 °C 4 2 --40 --20 0 20 40 60 80 100 120 Ciss, Coss, Crss -- pF 2 tf 100 7 5 tr 3 td(on) IS -- VSD 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 1.4 IT15003 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 1000 7 Coss 5 Crss 3 2 2 5 7 1.0 160 VGS=0V Single pulse 5 td(off) 140 IT15001 7 7 5 3 A =50 V, I D 0 . 0 =1 VGS 6 10000 1000 2 =4.5 VGS Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 10 0.1 A =25 V, I D 8 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 IT15002 SW Time -- ID 3 10 Case Temperature, Tc -- °C 2 1.0 7 5 0.1 6 IT14999 12 0 --60 16 °C 5 Single pulse Source Current, IS -- A 100 7 5 4 RDS(on) -- Tc 14 VDS=10V 2 3 2 Gate-to-Source Voltage, VGS -- V IT15000 | yfs | -- ID 3 1 0 IT14998 5°C 25°C --25° C 0.6 RDS(on) -- VGS 0 Forward Transfer Admittance, | yfs | -- S 70 Tc= 7 0.4 2 Switching Time, SW Time -- ns 80 10 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 14 2 90 20 Drain-to-Source Voltage, VDS -- V 3 100 30 10 0 110 Tc= 75°C --25° C 60 140 Drain Current, ID -- A 70 VDS=10V 130 16.0V 10.0V Drain Current, ID -- A 80 V 4.5 V 8.0V 90 ID -- VGS 150 Tc=25°C Tc=-25° C 75°C 25° C ID -- VDS 100 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT15004 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT15005 No. A1551-3/4 ATP204 VGS -- Qg 10 7 6 5 4 2 1 0 0 10 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 70 40 30 20 10 0 40 60 80 100 Tc=25°C Single pulse 2 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14983 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14982 EAS -- Ta 120 50 20 1.0 7 5 3 2 IT15006 60 0 Operation in this area is limited by RDS(on). 10 7 5 3 2 0.1 0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 60 ID=100A 100 7 5 3 2 on 3 PW≤10μs 10μ s 10 0μ s 1m s 10 10 ms 0m s ati er op Drain Current, ID -- A 8 IDP=300A DC Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 3 2 VDS=15V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14011 Note on usage : Since the ATP204 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1551-4/4