ATP208 Ordering number : ENA1396A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP208 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 40 PW≤10μs, duty cycle≤1% V 90 A 270 A 60 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 155 mJ 45 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=15V, L=100μH, IAV=45A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP208-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP208 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 0.8 1.7 2,4 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/11409PA MS IM TC-00001776 No. A1396-1/7 ATP208 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Conditions Ratings min typ Unit max 40 ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.5 16 VDS=10V, ID=45A ID=45A, VGS=10V ID=23A, VGS=4.5V 1 μA ±10 μA 2.6 28 V S 4.6 6.0 mΩ 7 9.8 mΩ 4510 pF 535 pF Crss 385 pF td(on) tr 35 ns 400 ns 280 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=90A 200 ns 83 nC 19 nC 17 IS=90A, VGS=0V 1.0 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=45A RL=0.44Ω VIN D PW=10μs D.C.≤1% VOUT G ATP208 P.G 50Ω S Ordering Information Device ATP208-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1396-2/7 ATP208 Drain Current, ID -- A 4.0V 50 40 30 VGS=3.5V 100 60 40 20 25 ° 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 16 1.8 12 ID=23A 10 45A 8 6 4 2 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 6 2 --40 --20 0 20 40 60 80 100 120 tf 100 7 tr 5 td(on) 3 140 160 IT14325 IS -- VSD VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT14327 f=1MHz Ciss 5 td(off) 2 5.5 IT14323 4 7 3 5.0 A =23 V, I D 5 . 4 = VGS A =45 V, I D 0 . 0 =1 VGS 8 10000 VDD=20V VGS=10V 3 2 1000 7 Coss 5 Crss 3 2 2 10 0.1 4.5 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 4.0 10 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 2 IT14326 SW Time -- ID 1000 3.5 Case Temperature, Tc -- °C 1.0 7 3 0.1 3.0 12 0 --60 16 5°C --2 = C Tc 75° 2.5 Single pulse C 25° 2 2.0 RDS(on) -- Tc 14 VDS=10V 3 1.5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 1.0 IT14324 | yfs | -- ID 7 0.5 Gate-to-Source Voltage, VGS -- V 0 0 0 IT14322 Tc=25°C Single pulse 14 0 2.0 °C 25°C --25° C 0.2 Tc= 75 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 C 20 10 25° C 80 Tc= 75° C --25 °C 10.0 60 VDS=10V 120 16.0V Drain Current, ID -- A 70 5V 4. 6.0V V 8.0V 80 ID -- VGS 140 Tc=25°C Tc= --25° C 75°C ID -- VDS 90 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14328 100 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 40 IT14329 No. A1396-3/7 ATP208 VGS -- Qg 10 3 2 7 6 5 10 20 30 40 50 60 70 Total Gate Charge, Qg -- nC PD -- Tc 10 7 5 Operation in this area is limited by RDS(on). 3 2 1.0 7 5 80 90 40 30 20 10 0 40 60 80 100 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14332 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14331 EAS -- Ta 120 50 20 3 IT14330 60 0 Tc=25°C pulse 0.1 Single 2 0.1 Avalanche Energy derating factor -- % 70 Allowable Power Dissipation, PD -- W 3 2 n 0 s 10 m 0m s s 10 μs 10 3 2 1 0μ s io 2 100 7 5 10 1m at er 3 ID=90A op 4 PW≤10μs C Drain Current, ID -- A 8 0 IDP=270A D Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=20V ID=90A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1396-4/7 ATP208 Taping Specification ATP208-TL-H No. A1396-5/7 ATP208 Outline Drawing ATP208-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1396-6/7 ATP208 Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1396-7/7