Ordering number : EN8970A ATP218 N-Channel Power MOSFET http://onsemi.com 30V, 100A, 3.8mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 30 PW≤10μs, duty cycle≤1% V 100 A 300 A 60 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 235 mJ 50 A Avalanche Current *2 Tc=25°C V ±10 Note : *1 VDD=15V, L=100μH, IAV=50A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP218-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP218 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62012 TKIM/51111PA TKIM TC-00002592 No.8970-1/7 ATP218 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V V 1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=50A 260 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=50A, VGS=4.5V ID=25A, VGS=2.5V 2.9 3.8 mΩ 4.0 5.6 mΩ Input Capacitance Ciss Output Capacitance Coss 0.5 VDS=10V, f=1MHz 1.3 V S 6600 pF 780 pF Reverse Transfer Capacitance Crss 600 pF Turn-ON Delay Time td(on) 88 ns Rise Time tr 960 ns Turn-OFF Delay Time td(off) 340 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=15V, VGS=4.5V, ID=100A 320 ns 70 nC 20 nC 14 IS=100A, VGS=0V 0.91 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=15V VIN ID=50A RL=0.3Ω VIN D PW=10μs D.C.≤1% VOUT G ATP218 P.G 50Ω S Ordering Information Device ATP218-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.8970-2/7 ATP218 ID -- VDS 40 30 30 10 VGS=1.5V 1.0 1.5 2.0 2.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=25A 50A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 6 7 8 9 100 7 5 C 5° --2 = Tc °C 75 3 2 10 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A VDD=15V VGS=4.5V 2 1 --40 --20 0 20 40 60 80 100 120 140 160 IT16421 IS -- VSD VGS=0V 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 100000 7 5 1.2 IT16423 f=1MHz 3 1000 7 5 3 2 td(off) 2 10000 7 5 tf tr 100 7 5 3 2 td(on) 10 7 5 3 2 1.0 0.1 3 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 7 100 IT16422 SW Time -- ID 10000 7 5 3 2 4 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 3 2 1.0 0.1 A =25 , ID V 5 =2. A =50 V GS , ID V 5 . =4 VGS 5 Case Temperature, Tc -- °C 3 °C 25 2.5 IT16419 6 0 --60 10 VDS=10V 2 2.0 7 IT16420 | yfs | -- ID 1000 7 5 1.5 RDS(on) -- Tc Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 1.0 8 5.5 4.5 0.5 Gate-to-Source Voltage, VGS -- V Tc=25°C 5.0 0 IT16418 RDS(on) -- VGS 6.0 0 3.0 5°C 25° C --25 °C 0.5 Tc= 7 0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25° C 20 0 60 Tc= 75° C 50 90 --2 5°C 1.8V 4.5 60 Drain Current, ID -- A 70 VDS=10V 120 V 3.5 V 8.0V Drain Current, ID -- A 80 2.0V ID -- VGS 150 Tc=25°C 3.0V 90 2 .5 V 6.0V 100 Ciss 3 2 1000 7 5 Coss Crss 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain Current, ID -- A 2 3 5 71000 IT16424 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT16425 No.8970-3/7 ATP218 VGS -- Qg 3 2 0 10 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 70 40 30 20 10 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16428 0μ s 10 μs Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT16427 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 50 0 1m s 10 m 10 s 0m s Operation in this area is limited by RDS(on). IT16426 60 0 10 7 5 3 2 0.1 0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 60 ID=100A 100 7 5 3 2 1.0 7 5 3 2 10 on ati er 1 IDP=300A (PW≤10μs) op Drain Current, ID -- A 4 0 ASO 1000 7 5 3 2 VDS=15V ID=100A DC Gate-to-Source Voltage, VGS -- V 5 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16429 No.8970-4/7 ATP218 Taping Specification ATP218-TL-H No.8970-5/7 ATP218 Outline Drawing ATP218-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.8970-6/7 ATP218 Note on usage : Since the ATP218 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.8970-7/7