ASI AVF400 Npn silicon rf power transistor Datasheet

AVF400
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
A
.025 x 45°
DESCRIPTION:
4x .062 x 45°
2X B
ØD
C
The ASI AVF400 is Designed for
E
F
G
FEATURES:
H
• Input Matching Network
•
• Omnigold™ Metalization System
L
M
28 A
55 V
PDISS
1000 W @ TC ≤ 80 C
O
O
O
TJ
-65 C to +250 C
TSTG
-65 OC to +200 OC
θ JC
0.17 OC/W
MINIMUM
MAXIMUM
inches / mm
inches / mm
A
.020 / 0.51
.030 / 0.76
B
.100 / 2.54
C
.376 / 9.55
D
.110 / 2.79
.130 / 3.30
E
.395 / 10.03
.407 / 10.34
.396 / 10.06
F
.193 / 4.90
G
.450 / 11.43
.125 / 3.18
I
.640 / 16.26
.660 / 16.76
J
.890 / 22.61
.910 / 23.11
K
.395 / 10.03
.415 / 10.54
L
.004 / 0.10
.007 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
CHARACTERISTICS
SYMBOL
O
NONETEST CONDITIONS
IC = 15 mA
BVCER
IC = 50 mA
BVEBO
IE = 1 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
ηC
ORDER CODE: ASI10574
TC = 25 C
BVCBO
PG
N
DIM
H
VCC
K
P
MAXIMUM RATINGS
IC
I
J
VCC = 50 V
RBE = 10 Ω
IC = 1.0 A
POUT = 400 W
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.5
V
15
f = 1030 - 1090 MHz
UNITS
35
mA
120
---
6.7
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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