ANADIGICS AWT6632P9 Help3dc umts1900 (band 2) lte/wcdma/cdma linear pa module Datasheet

AWT6632
HELP3DC UMTS1900 (Band 2)
LTE/WCDMA/CDMA Linear PA Module
TM
DATA SHEET - Rev 2.1
FEATURES
•
CDMA/EVDO, WCDMA/HSPA, LTE Compliant
•
3rd Generation HELPTM technology
•
High Efficiency: (R99 waveform)
AWT6632
• 40 % @ POUT = +29 dBm
• 22 % @ POUT = +16.75 dBm
•
Simpler Calibration with only 2 Bias Modes
•
Optimized for SMPS Supply
•
Low Quiescent Current: 8 mA
•
Low Leakage Current in Shutdown Mode: <5 µA
•
Internal Voltage Regulator
•
Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
•
Optimized for a 50 Ω System
•
Low Profile Miniature Surface Mount Package
•
Internal DC blocks on IN/OUT RF ports
•
1.8 V Control Logic
•
RoHS Compliant Package, 260 oC MSL-3
ruggedness. There are two selectable bias modes
that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
which increases handset talk and standby time. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 Ω system.
APPLICATIONS
•
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Wireless Handsets and Data Devices for:
• WCDMA/HSPA/LTE PCS Band 2
• CDMA/EVDO Bandclass 1 & 14
GND at Slug (pad)
• Band 25 LTE Devices
VBATT
1
RFIN
2
VMODE2 (N/C)
3
VMODE1
VEN
PRODUCT DESCRIPTION
The AWT6632 PA is designed to provide highly linear
output for WCDMA, CDMA and LTE handsets and
data devices with high efficiency at both high and
low power modes. This HELP3DCTM PA can be
used with an external switch mode power supply
(SMPS) to improve its efficiency and reduce current
consumption further at medium and low output
powers. A “daisy chainable” directional coupler is
integrated in the module thus eliminating the need
of external couplers. The device is manufactured on
an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
02/2012
10
VCC
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
AWT6632
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2 (N/C)
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
2
VMODE2 (N/C) No Connection
Mode Control Voltage 1
4
VMODE1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
PA Enable Voltage
Coupler Output
Supply Voltage
DATA SHEET - Rev 2.1
02/2012
VCC
AWT6632
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VENABLE)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
MIN
TYP
MAX
UNITS
Operating Frequency (f)
PARAMETER
1850
-
1915
MHz
Supply Voltage (VCC)
+0.5
+3.4
+4.35
V
POUT < +29.0 dBm
Battery Voltage (VBATT)
+3.1
+3.4
+4.35
V
POUT < +29.0 dBm
Enable Voltage (VENABLE)
+1.35
0
+1.8
0
+3.1
+0.5
V
PA “on”
PA “shut down”
Mode Control Voltage (VMODE1)
+1.35
0
+1.8
0
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT)
R99 WCDMA, HPM
HSPA (MPR = 0), HPM
LTE, HPM
R99 WCDMA, LPM
HSPA (MPR = 0), LPM
LTE, LPM
28.2 (1)
27.2 (1)
27.2 (1)
15.95 (1)
14.95 (1)
14.95 (1)
29.0
28.0
28.0
16.75
15.75
15.75
29.0
28.0
28.0
16.75
15.75
15.75
dBm
CDMA Output Power
HPM
LPM
27.4 (1)
14.95 (1)
28.2
15.75
-
dBm
-30
-
+90
°C
Case Temperature (TC)
COMMENTS
3GPP TS 34.121-1, Rel 8
Table C.11.1.3, for WCDMA
Subtest 1
TS 36.101 Rel 8 for LTE
CDMA2000, RC-1
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
3
DATA SHEET - Rev 2.1
02/2012
AWT6632
Table 4: Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
TYP
MAX
UNIT
25
12
27
14
29
16
dB
+29.0 dBm
+16.75 dBm
0V
1.8 V
ACLR1 at 5 MHz offset (1)
-
-42
-40
-39
-37
dBc
+29.0 dBm
+16.75 dBm
0V
1.8 V
ACLR2 at 10 MHz offset
-
-55
-55
-48
-48
dBc
+29.0 dBm
+16.75 dBm
0V
1.8 V
36
20
40
23
-
%
+29.0 dBm
+16.75 dBm
0V
1.8 V
Quiescent Current (Icq)
Low Bias Mode
-
10
15
mA
VMODE1 = +1.8 V
Mode Control Current
-
0.2
0.4
mA
through VMODE pin, VMODE1 = +1.8 V
Enable Current
-
0.3
0.5
mA
through VENABLE pin
BATT Current
-
2.5
5
mA
through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
3
4
µA
VBATT = +4.2 V, VCC = +4.2 V,
VENABLE = 0 V, VMODE1 = 0 V
-
-134
-
dBm/Hz POUT < +29.0 dBm, VMODE1 = 0V
-
-140
-
dBm/Hz POUT < 16.75 dBm, VMODE1 = +1.8 V
Harmonics
2fo
3fo, 4fo
-
-39
-60
-35
-50
dBc
Input Impedance
-
2:1
-
VSWR
Coupling Factor
-
20
-
dB
Directivity
-
22
-
dB
Coupler In - Out
Daisy Chain Insertion Loss
-
0.25
-
dB
698 MHz to 2620 MHz
Pin 6 to 8
Shutdown Mode
Gain
Power-Added Efficiency (1)
Noise in Receive Band(2)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
Phase Delta (HPM-LPM)
POUT
VMODE1
POUT < +29.0 dBm
-
-
-70
dBc
POUT < +29.0 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
8:1
-
-
VSWR
Applies over full operating range
-
10
-
Deg
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
(2) Noise measured at 1930 MHz to 1990 MHz.
4
COMMENTS
MIN
DATA SHEET - Rev 2.1
02/2012
AWT6632
Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
24
12
26.5
14
29
16
ACLR E-UTRA
at ± 10 MHz offset
-
-39
-38
ACLR1 UTRA (1)
at ± 7.5 MHz offset
-
ACLR2 UTRA
at ± 12.5 MHz offset
Gain
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT
VMODE1
dB
+28.0 dBm
+15.75 dBm
0V
1.8 V
-36
-35
dBc
+28.0 dBm
+15.75 dBm
0V
1.8 V
-40
-39
-37
-36
dBc
+28.0 dBm
+15.75 dBm
0V
1.8 V
-
-62
-62
-58
-58
dBc
+28.0 dBm
+15.75 dBm
0V
1.8 V
33
17
36
20
-
%
+28.0 dBm
+15.75 dBm
0V
1.8 V
-
-
<-70
8:1
-
-
dBc
P OUT ≤ +28.0 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
VSWR Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1880 MHz.
5
COMMENTS
DATA SHEET - Rev 2.1
02/2012
AWT6632
Table 6: Electrical Specifications - CDMA Operation (CDMA 2000, RC-1)
(TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24
12
26
14
28
16
Adjacent Channel Power
at +1.25 MHz offset (1)
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-50
-50
Adjacent Channel Power
at + 1.98 MHz offset (1)
Primary Channel = 1.23 MHz
Adjacent Channel = 30 kHz
-
Power-Added Efficiency (1)
-
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
POUT
VMODE1
dB
+28.2 dBm
+15.75 dBm
0V
1.8 V
-46
-46
dBc
+28.2 dBm
+15.75 dBm
0V
1.8 V
-55
-60
-51
-56
dBc
+28.2 dBm
+15.75 dBm
0V
1.8 V
37
20
-
%
+28.2 dBm
+15.75 dBm
0V
1.8 V
-
-
<-70
dBc
POUT < +28.2 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating ranges
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) ACPR and Efficiency measured at 1880 MHz.
6
COMMENTS
DATA SHEET - Rev 2.1
02/2012
AWT6632
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE1 voltages.
Bias Modes
The power amplifier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE1.
The Bias Control table lists the recommended modes
of operation for various applications. VMODE2 is not
necessary for this PA.
Two operating modes are available to optimize current
consumption. High Bias/High Power operating mode
is for POUT levels > 15.75 dBm. At around 16.75 dBm
output power, the PA should be “Mode Switched”
to Low power mode for lowest quiescent current
consumption.
Vcontrols
Venable/Vmode(s)
On Sequence Start
T_0N = 0µ
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Off Sequence Start
T_0FF = 0µ
ON Sequence
OFF Sequence
RFIN
notes 1,2
VEN
VCC
note 1
T_0N+1µS
T_0N+3µS
T_0FF+2µS T_0FF+3µS
Referenced After 90% of Rise
Time
Referenced Before10% of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
Table 7: Bias Control
POUT
LEVELS
BIAS
MODE
VENABLE
VMODE1
VCC
VBATT
High power
(High Bias Mode)
>+15.75 dBm
High
+1.8 V
0V
1.5 - 4.35 V
> 3.1 V
Med/low power
(Low Bias Mode)
 +16.75 dBm
Low
+1.8 V
+1.8 V
0.5 - 4.35 V
> 3.1 V
-
Shutdown
0V
0V
0.5 - 4.35 V
> 3.1 V
Application
Shutdown
7
DATA SHEET - Rev 2.1
02/2012
AWT6632
VBATT
VCC
C5
2.2 µF
C1
33pF
C2
0.1µF
GND at slug
1
2
RFIN
3
VMODE1
VEN
VBATT
VCC
RFIN
RFOUT
10
9
VMODE2 (N/C) CPLIN
8
GND
7
4
VMODE1
5
VEN
RFOUT
CPLIN
CPLOUT 6
CPLOUT
RFIN
VCC
GND
GND
VBATT
Figure 4: Evaluation Circuit Schematic
C6
C1
RFOUT
C3
C2
CPLOUT
VMODE1
VEN
GND
GND
VMODE2
C4
CPLIN
Figure 5: Evaluation Board Layout
8
DATA SHEET - Rev 2.1
02/2012
C3
2.2µF ceramic
AWT6632
HELP3DCTM
The AWT6632 power amplifier module is based on
ANADIGICS proprietary HELP3DC™ technology.
The PA is designed to operate up to 17 dBm in the low
power mode, thus eliminating the need for three gain
states, while still maintaining low quiescent current
and high efficiency in low and medium power levels. Average weighted efficiency can be increased by
using an external switch mode power supply (SMPS)
or DC/DC converter to reduce VCC.
The directional “daisy chainable” coupler is integrated
within the PA module, therefore there is no need for
external couplers.
The AWT6632 has an integrated voltage regulator,
which eliminates the need for an external constant
voltage source. The PA is turn on/off is controlled
by VEN pin. A single VMODE control logic (VMODE1) is
needed to operate this device. AWT6632 requires
only two calibration sweeps for system calibration,
thus saving calibration time.
Figure 5 shows one application example on mobile
board. C1 and C2 are RF bypass caps and should
be placed nearby pin 1 and pin 10. Bypass caps
C4 and C5 may not be needed. Also a “T” matching
topology is recommended at PA RFIN and RFOUT
ports to provide matching between input TX Filter and
Duplexer / Isolator.
SMPS
VBATT
C6
GND
RFIN
TX filter
C1
C2
GND
at slug
GND
Input
Matching
VBATT
VCC
RFIN
RFOUT
VMODE2
CPL IN
VMODE1
C5
VEN
GND
GND
50Ω
CPLOUT
GND
To
Detector
PA_R0
PA_0N
C4
GND
Figure 6: Typical Application Circuit
9
DATA SHEET - Rev 2.1
02/2012
GND
RFOUT
GND
BB
C3
Output
Matching
Duplexer
AWT6632
PERFORMANCE DATA:
Figure
8: WCDMA
(dB)
over
Voltage
Figure
5: WCDMA Gain
Gain (dB)
over
Voltage
)
= 25 8C)
(TC(Tc=25C
4: WCDMA
Gain(dB)
(dB) over
over Temperature
Figure Figure
7: WCDMA
Gain
Temperature
(VBATT(Vbatt=Vcc=3.4V)
= VCC = 3.4 V)
30
25C 3.2Vcc
25C 3.4Vcc
25
25C 3.4Vcc
90C 3.4Vcc
25C 4.2Vcc
25
20
Gain (dB)
Gain (dB)
30
-30C 3.4Vcc
15
25C 3.0Vcc
20
15
10
5
10
0
5
10
15
20
25
30
0
5
Figure 6: WCDMA PAE (%) over Temperature
Figure 9: WCDMA
PAE (%) over Temperature
(Vbatt=Vcc=3.4V)
(VBATT = VCC = 3.4 V)
-30 3.4cc
40
25C 3.4Vcc
50
20
25
30
25C 3.2Vcc
25C 3.4Vcc
40
90C 3.4Vcc
35
15
7: WCDMA PAE
PAE (%)
over
Voltage
Figure Figure
10: WCDMA
(%)
over
Voltage
(Tc=25C)
(TC = 25 8C)
45
25C 4.2Vcc
35
30
Efficiency
Efficiency (%)
50
45
10
Pout (dBm)
Pout (dBm)
25
20
15
25C 3.0Vcc
30
25
20
15
10
10
5
5
0
0
5
10
15
Pout (dBm)
20
25
0
30
0
5
10
15
20
25
30
Pout (dBm)
Figure 11:
WCDMA
ACLR1
(dBc)
over Temperature Figure 12: WCDMA ACLR1 (dBc) over Temperature
Figure
8: WCDMA
ACRL1 (dBc)
over Temperature
Figure 9: WCDMA ACLR1 (dBc) over Voltage
(Vbatt=Vcc=3.4V)
(VBATT
= VCC = 3.4 V)
(T
C = 25 8C)
(Tc=25C)
-25
25C 3.4Vcc
-35
-40
-45
-50
25C 3.4Vcc
25C 4.2Vcc
-35
25C 3.0Vcc
-40
-45
-50
-55
0
5
10
15
Pout (dBm)
10
25C 3.2Vcc
-30
90C 3.4Vcc
ACLR1 (5MHz dBc)
ACLR1 (5MHz dBc)
-25
-30C 3.4Vcc
-30
20
25
30
-55
0
5
10
15
Pout (dBm)
DATA SHEET - Rev 2.1
02/2012
20
25
30
AWT6632
PACKAGE OUTLINE
Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY=Year; WW=Work week
6632
Part Number
LLLLNN
YYWWCC
Lot Number
Country Code (CC)
Figure 14: Branding Specification Package
11
DATA SHEET - Rev 2.1
02/2012
AWT6632
PCB AND STENCIL DESIGN GUIDELINE
Figure 15: Recommended PCB Layout Information
12
DATA SHEET - Rev 2.1
02/2012
AWT6632
COMPONENT PACKAGING
Pin 1
Figure 16: Carrier Tape
Figure 17: Reel
13
DATA SHEET - Rev 2.1
02/2012
AWT6632
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
AWT6632Q7
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
AWT6632P9
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
COMPONENT PACKAGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
14
DATA SHEET - Rev 2.1
02/2012
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